1
Transistors with built-in Resistor
UN6211/6212/6213/6214/6215/6216/6217/6218/
6219/6210/621D/621E/621F/621K/621L
Silicon NPN epitaxial planer transistor
For digital circuits
s
Features
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q
MT-1 type package, allowing supply with the radial taping.
s
Resistance by Part Number
(R
1
)
(R
2
)
q
UN6211
10k
Ω
10k
Ω
q
UN6212
22k
Ω
22k
Ω
q
UN6213
47k
Ω
47k
Ω
q
UN6214
10k
Ω
47k
Ω
q
UN6215
10k
Ω
—
q
UN6216
4.7k
Ω
—
q
UN6217
22k
Ω
—
q
UN6218
0.51k
Ω
5.1k
Ω
q
UN6219
1k
Ω
10k
Ω
q
UN6210
47k
Ω
—
q
UN621D
47k
Ω
10k
Ω
q
UN621E
47k
Ω
22k
Ω
q
UN621F
4.7k
Ω
10k
Ω
q
UN621K
10k
Ω
4.7k
Ω
q
UN621L
4.7k
Ω
4.7k
Ω
s
Absolute Maximum Ratings
(Ta=25ËšC)
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
50
V
Collector current
I
C
100
mA
Total power dissipation
P
T
400
mW
Junction temperature
T
j
150
ËšC
Storage temperature
T
stg
–55 to +150
ËšC
B
C
R1
R2
E
Unit: mm
1 : Emitter
2 : Collector
3 : Base
MT-1 Type Pakage
6.9
±
0.1
1.05
±
0.05
2.5
±
0.1
3.5
±
0.1
14.5
±
0.5
(1.45)
0.8
0.7
4.0
0.15
0.85
0.8
1.0
0.65 max.
0.45
+0.1
–0.05
0.45
+0.1
–0.05
2.5
±
0.5
2.5
±
0.5
2.5
±
0.1
1
2
3
2
Transistors with built-in Resistor
UN6211/6212/6213/6214/6215/6216/6217/6218/
6219/6210/621D/621E/621F/621K/621L
s
Electrical Characteristics
(Ta=25ËšC)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
V
CB
= 50V, I
E
= 0
0.1
µ
A
I
CEO
V
CE
= 50V, I
B
= 0
0.5
µ
A
UN6211
0.5
UN6212/6214/621E/621D
0.2
UN6213
0.1
UN6215/6216/6217/6210
I
EBO
V
EB
= 6V, I
C
= 0
0.01
mA
UN621F/621K
1.0
UN6219
1.5
UN6218/621L
2.0
Collector to base voltage
V
CBO
I
C
= 10
µ
A, I
E
= 0
50
V
Collector to emitter voltage
V
CEO
I
C
= 2mA, I
B
= 0
50
V
UN6211
35
UN6212/621E
60
UN6213/6214
h
FE
V
CE
= 10V, I
C
= 5mA
80
UN6215*/6216*/6217*/6210*
160
460
UN621F/621D/6219
30
UN6218/621K/621L
20
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 10mA, I
B
= 0.3mA
0.25
V
Output voltage high level
V
OH
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k
Ω
4.9
V
Output voltage low level
V
CC
= 5V, V
B
= 2.5V, R
L
= 1k
Ω
0.2
UN6213/621K
V
OL
V
OC
= 5V, V
B
= 3.5V, R
1
= 1k
Ω
0.2
V
UN621D
V
CC
= 5V, V
B
= 10V, R
1
= 1k
Ω
0.2
UN621E
V
CC
= 5V, V
B
= 6V, R
L
= 1k
Ω
0.2
Transition frequency
f
T
V
CB
= 10V, I
E
= –2mA, f = 200MHz
150
MHz
UN6211/6214/6215/621K
10
UN6212/6217
22
UN6213/621D/621E/6210
R
1
(–30%)
47
(+30%)
k
Ω
UN6216/621F/621L
4.7
UN6218
0.51
UN6219
1
UN6211/6212/6213/621L
0.8
1.0
1.2
UN6214
0.17
0.21
0.25
UN6218/6219
0.08
0.1
0.12
UN621D
R
1
/R
2
3.7
4.7
5.7
UN621E
1.7
2.14
2.6
UN621F
0.37
0.47
0.57
UN621K
1.7
2.13
2.6
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
Resis-
tance
ratio
* h
FE
rank classification (UN6215/6216/6217/6210)
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
3
Transistors with built-in Resistor
UN6211/6212/6213/6214/6215/6216/6217/6218/
6219/6210/621D/621E/621F/621K/621L
Common characteristics chart
P
T
— Ta
Characteristics charts of UN6211
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
I
O
— V
IN
V
IN
— I
O
0
100
200
300
400
500
0
20
40
80
60
140
120
100
160
Ambient temperature Ta (ËšC)
Total power dissipation P
T
(mW
)
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25ËšC
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75ËšC
25ËšC
– 25˚C
0
1
3
100
200
300
400
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75ËšC
25ËšC
– 25˚C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25ËšC
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
µ
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25ËšC
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25ËšC
4
Transistors with built-in Resistor
UN6211/6212/6213/6214/6215/6216/6217/6218/
6219/6210/621D/621E/621F/621K/621L
Characteristics charts of UN6212
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
I
O
— V
IN
V
IN
— I
O
Characteristics charts of UN6213
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25ËšC
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.9mA
0.8mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75ËšC
25ËšC
– 25˚C
0
1
3
100
200
300
400
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75ËšC
25ËšC
– 25˚C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25ËšC
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
µ
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25ËšC
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25ËšC
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25ËšC
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75ËšC
25ËšC
– 25˚C
0
1
3
100
200
300
400
350
250
150
50
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75ËšC
25ËšC
– 25˚C
5
Transistors with built-in Resistor
UN6211/6212/6213/6214/6215/6216/6217/6218/
6219/6210/621D/621E/621F/621K/621L
C
ob
— V
CB
I
O
— V
IN
V
IN
— I
O
Characteristics charts of UN6214
I
C
— V
CE
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
I
O
— V
IN
V
IN
— I
O
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25ËšC
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
µ
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25ËšC
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25ËšC
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25ËšC
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector to emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/I
B
=10
Ta=75ËšC
25ËšC
– 25˚C
0
1
3
100
200
300
400
350
250
150
50
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75ËšC
25ËšC
– 25˚C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25ËšC
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
µ
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25ËšC
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25ËšC