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Semiconductor Group
1
GaAs FET
CFY 25
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
CFY 25-17
CFY 25-20
CFY 25-23
Q62703-F106
Q62703-F107
Q62703-F108
C 5
C 6
C 7
Micro-X
1
2
3
D
S
G
4
S
Parameter
Symbol
Values
Unit
Drain-source voltage
V
DS
5
V
Drain current
I
D
80
mA
Gate-source voltage
V
GS
– 5 … + 0
Channel temperature
T
ch
150
˚C
Total power dissipation,
T
S
≤
56 ˚C
2)
P
tot
250
mW
Storage temperature range
T
stg
– 65 … + 150
Thermal Resistance
Channel - soldering point
2)
R
th chS
375
K/W
Drain-gate voltage
V
DG
7
1)
For detailed information see chapter Package Outlines.
2)
T
S
is measured on the source lead at the soldering point to the pcb.
q
Low noise
q
High gain
q
For front-end amplifiers
q
lon-implanted planar structure
q
All gold metallization
07.94
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CFY 25
Semiconductor Group
2
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
mA
Drain-source saturation current
V
DS
= 3 V,
V
GS
= 0
I
DSS
15
30
60
mS
Transconductance
I
D
= 15 mA,
V
DS
= 3 V
g
m
30
40
–
V
Pinch-off voltage
I
D
= 1 mA,
V
DS
= 3 V
V
p
– 0.3
– 1.0
– 3.0
µ
A
Gate leakage current
I
D
= 15 mA,
V
DS
= 3 V
I
G
–
0.1
2
dB
Noise figure
I
DS
= 15 mA,
V
DS
= 3 V,
f
= 12 GHz CFY 25-17
CFY 25-20
CFY 25-23
F
–
–
–
1.6
1.9
2.2
1.7
2.0
2.3
Associated gain
I
DS
= 15 mA,
V
DS
= 3 V,
f
= 12 GHz CFY 25-17
CFY 25-20
CFY 25-23
G
a
9
8.5
8.5
9.5
9
9
–
–
–
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CFY 25
Semiconductor Group
3
Total power dissipation
P
tot
=
f
(
T
S
;
T
A
*)
* Package mounted on alumina
Transfer characteristics
I
D
=
f
(
V
G
)
V
DS
= 3 V
Output characteristics
I
D
=
f
(
V
DS
)
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CFY 25
Semiconductor Group
4
Source impedance for min. noise figure
I
D
= 15 mA,
V
DS
= 3 V
Common Source Noise Parameters
2
4
6
8
10
12
14
0.60
0.77
1.00
1.25
1.55
1.77
2.15
18.5
14.6
12.4
11.0
9.8
9.0
8.1
31
63
103
140
174
– 156
– 130
29
21
13
7.3
5.6
7.1
18
0.10
0.14
0.19
0.23
0.28
0.29
0.46
2.0
1.8
1.8
2.0
2.4
2.5
3.0
0.70
0.59
0.50
0.47
0.45
0.43
0.41
f
Γ
opt
GHz
dB
dB
MAG
ANG
Ω
–
dB
F
min
G
a
R
N
N
F
50
Ω
I
D
= 15 mA,
V
DS
= 3.0 V,
Z
0
= 50
Ω
0.580
0.420
0.260
0.146
0.112
0.142
0.360
–
r
N
11.4
10.5
9.3
8.2
7.3
6.4
5.8
dB
G
(
F
50
Ω
)
Circles of constant noise figure
I
D
= 15 mA,
V
DS
= 3 V,
f
= 12 GHz
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CFY 25
Semiconductor Group
5
Minimum noise figure
F
min
=
f
(
f
)
Associated gain
G
a
=
f
(
f
)
I
D
= 15 mA,
V
DS
= 3 V,
Z
Sopt
Minimum noise figure
F
min
=
f
(
I
D
)
Associated gain
G
a
=
f
(
I
D
)
V
DS
= 3 V,
f
= 12 GHz,
Z
Sopt
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CFY 25
Semiconductor Group
6
Common Source S Parameters
f
S
11
S
21
S
12
S
22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.99
0.96
0.91
0.86
0.81
0.77
0.74
0.70
0.68
0.67
0.67
0.66
0.66
0.66
0.66
0.66
0.66
0.66
– 21
– 42
– 67
– 87
– 107
– 125
– 145
– 165
178
161
146
132
117
103
90
77
63
47
3.83
3.73
3.55
3.34
3.10
2.92
2.74
2.57
2.42
2.31
2.20
2.10
2.02
1.94
1.90
1.84
1.80
1.78
161
141
121
103
86
70
54
37
23
9
– 4
– 17
– 31
– 44
– 57
– 70
– 84
– 99
0.026
0.049
0.069
0.083
0.093
0.100
0.105
0.107
0.108
0.109
0.110
0.110
0.110
0.112
0.115
0.119
0.125
0.132
75
61
45
33
21
11
1
– 9
– 17
– 24
– 30
– 36
– 42
– 49
– 55
– 63
– 72
– 83
0.68
0.66
0.63
0.59
0.56
0.52
0.48
0.45
0.42
0.41
0.39
0.37
0.36
0.35
0.34
0.33
0.32
0.31
– 13
– 27
– 41
– 55
– 66
– 77
– 89
– 102
– 112
– 124
– 134
– 145
– 158
– 169
180
165
151
136
I
D
= 15 mA,
V
DS
= 3 V,
Z
0
= 50
Ω
S
11
,
S
22
I
D
= 15 mA,
V
DS
= 3 V,
Z
0
= 50
Ω
S
12
,
S
21
I
D
= 15 mA,
V
DS
= 3 V,
Z
0
= 50
Ω