FFB3906 / FMB3906 / MMPQ3906
C1
B2
E2
E1
B1
C2
pin #1
C1
E1
C2
B1
E2
B2
pin #1
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10
µ
A to 100 mA. Sourced
from Process 66.
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
40
V
V
CBO
Collector-Base Voltage
40
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current - Continuous
200
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
1998 Fairchild Semiconductor Corporation
Thermal Characteristics
T
A
= 25°C unless otherwise noted
FFB3906
SC70-6
Mark: .2A
FMB3906
SuperSOT
-6
Mark: .2A
MMPQ3906
Symbol
Characteristic
Max
Units
FFB3904
FMB3904
MMPQ3904
P
D
Total Device Dissipation
Derate above 25
°
C
300
2.4
700
5.6
1,000
8.0
mW
mW/
°
C
R
θ
JA
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
415
180
125
240
°
C/W
°
C/W
°
C/W
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
SOIC-16
Mark: MMPQ3906
C1
C1
C2
C2
C3
C3
C4
C4
E1
B1
E2
B2
E3
B3
E4
B4
pin #1
FFB3906 / FMB3906 / MMPQ3906
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
*
Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%
V
(BR)CEO
Collector-Emitter Breakdown
Voltage*
I
C
= 1.0 mA, I
B
= 0
40
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 10
µ
A, I
E
= 0
40
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
µ
A, I
C
= 0
5.0
V
I
BL
Base Cutoff Current
V
CE
= 30 V, V
BE
= 3.0 V
50
nA
I
CEX
Collector Cutoff Current
V
CE
= 30 V, V
BE
= 3.0 V
50
nA
h
FE
DC Current Gain *
I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
60
80
100
60
30
300
V
CE(sat)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.25
0.4
V
V
V
BE(sat)
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
0.65
0.85
0.95
V
V
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
450
MHz
C
obo
Output Capacitance
V
CB
= 5.0 V, I
E
= 0,
f = 100 kHz
3.0
pF
C
ibo
Input Capacitance
V
EB
= 0.5 V, I
C
= 0,
f = 100 kHz
8.0
pF
NF
Noise Figure
(except MMPQ3906)
I
C
= 100
µ
A, V
CE
= 5.0 V,
R
S
=1.0k
Ω
, f=10 Hz to 15.7 kHz
2.5
dB
t
d
Delay Time
V
CC
= 3.0 V, V
BE
= 0.5 V,
15
ns
t
r
Rise Time
I
C
= 10 mA, I
B1
= 1.0 mA
20
ns
t
s
Storage Time
V
CC
= 3.0 V, I
C
= 10mA
110
ns
t
f
Fall Time
I
B1
= I
B2
= 1.0 mA
40
ns
PNP Multi-Chip General Purpose Amplifier
(continued)
Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
FFB3906 / FMB3906 / MMPQ3906
Typical Characteristics
Common-Base Open Circuit
Input and Output Capacitance
vs Reverse Bias Voltage
0.1
1
10
0
2
4
6
8
10
REVERSE BIAS VOLTAGE (V)
CA
P
A
CI
T
A
NCE (
p
F
)
C obo
C ibo
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Pulsed Current Gain
vs Collector Current
0.1
0.2
0.5
1
2
5
10
20
50
100
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
h
-
TYP
IC
A
L
P
U
LS
ED
C
U
R
R
E
N
T
G
A
IN
C
FE
125 °C
25 °C
- 40 °C
V = 1.0V
CE
Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
0.01
0.1
1
10
100
T - AMBIENT TEMPERATURE ( C)
I
-
CO
LL
EC
T
O
R CU
R
R
E
N
T
(
n
A)
A
CB
O
º
V = 25V
CB
Collector-Emitter Saturation
Voltage vs Collector Current
1
10
100
200
0
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
V
-
CO
LL
EC
TO
R EM
IT
T
E
R VO
L
T
A
G
E
(
V
)
C
C
ESA
T
25 °C
- 40 ºC
125 ºC
β
= 10
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
SE
EM
IT
T
E
R
V
O
L
T
A
GE
(
V
)
C
BE
S
A
T
β
= 10
25 °C
- 40 ºC
125 ºC
Base Emitter ON Voltage vs
Collector Current
0.1
1
10
25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
E
M
IT
T
E
R
O
N
V
O
L
T
A
GE
(
V
)
C
BE(
O
N
)
V = 1V
CE
25 °C
- 40 ºC
125 ºC
FFB3906 / FMB3906 / MMPQ3906
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P
-
P
O
W
E
R
D
IS
S
IP
A
T
IO
N
(
W
)
º
D
SOT-6
SOIC-16
SC70-6
Typical Characteristics
(continued)
PNP Multi-Chip General Purpose Amplifier
(continued)
Noise Figure vs Frequency
0.1
1
10
100
0
1
2
3
4
5
6
f - FREQUENCY (kHz)
NF
-
NO
IS
E
F
IGU
RE
(
d
B
)
I = 100
µ
A, R = 200
Ω
C
V = 5.0V
CE
S
I = 100
µ
A, R = 2.0 k
Ω
C
S
I = 1.0 mA, R = 200
Ω
C
S
Noise Figure vs Source Resistance
0.1
1
10
100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
NF
-
NO
IS
E
F
IG
U
RE
(
d
B)
k
Ω
I = 100
µ
A
C
V = 5.0V
f = 1.0 kHz
CE
I = 1.0 mA
C
S
Switching Times
vs Collector Current
1
10
100
1
10
100
500
I - COLLECTOR CURRENT (mA)
T
IME
(n
S
)
I = I =
t r
t
s
B1
C
B2
I
c
10
t f
t d
Turn On and Turn Off Times
vs Collector Current
1
10
100
1
10
100
500
I - COLLECTOR CURRENT (mA)
TI
M
E
(n
S
)
I = I =
t
off
B1
C
B2
I
c
10
t
on
V = 0.5V
BE(OFF)
t
I =
on
t
off
B1
I
c
10
FFB3906 / FMB3906 / MMPQ3906
Typical Characteristics
(continued)
Voltage Feedback Ratio
0.1
1
10
1
10
100
I - COLLECTOR CURRENT (mA)
h
-
V
O
L
T
AG
E
F
E
E
D
B
A
C
K
RAT
IO
(
x
1
0
)
C
re
_
4
Input Impedance
0.1
1
10
0.1
1
10
I - COLLECTOR CURRENT (mA)
h
-
I
N
PU
T I
M
PED
ANC
E
(k
)
V = 10 V
CE
C
ie
f = 1.0 kHz
Ω
Output Admittance
0.1
1
10
10
100
1000
I - COLLECTOR CURRENT (mA)
h
-
O
U
TPU
T
A
D
M
IT
T
A
N
C
E
(
m
h
os
)
V = 10 V
CE
C
oe
f = 1.0 kHz
µ
Current Gain
0.1
1
10
10
20
50
100
200
500
1000
I - COLLECTOR CURRENT (mA)
h
- C
U
R
R
E
N
T G
A
IN
V = 10 V
CE
C
fe
f = 1.0 kHz
PNP Multi-Chip General Purpose Amplifier
(continued)
TRADEMARKS
ACEx™
CoolFET™
CROSSVOLT™
E
2
CMOS
TM
FACT™
FACT Quiet Series™
FAST
®
FASTr™
GTO™
HiSeC™
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
UHC™
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