Semiconductor Group
1
PNP Silicon Darlington Transistors
BCV 28
BCV 48
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BCV 28
BCV 48
Q62702-C1852
Q62702-C1854
ED
EE
SOT-89
1
2
3
4
B
C
E
C
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
V
Peak collector current
I
CM
Collector current
I
C
mA
Junction temperature
T
j
˚C
Total power dissipation,
T
S
= 124 ˚C
P
tot
W
Storage temperature range
T
stg
Collector-base voltage
V
CB0
Thermal Resistance
Junction - ambient
2)
R
th JA
≤
72
K/W
500
800
1
150
– 65 … + 150
Emitter-base voltage
V
EB0
Base current
I
B
100
30
60
40
80
BCV 28
BCV 48
Peak base current
I
BM
200
10
10
Junction - soldering point
R
th JS
≤
17
q
For general AF applications
q
High collector current
q
High current gain
q
Complementary types: BCV 29, BCV 49 (NPN)
5.91
Semiconductor Group
2
BCV 28
BCV 48
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
DC current gain
1)
I
C
= 100
µ
A,
V
CE
= 1 V
BCV 28
BCV 48
I
C
= 10 mA,
V
CE
= 5 V
BCV 28
BCV 48
I
C
= 100 mA,
V
CE
= 5 V
BCV 28
BCV 48
I
C
= 0.5 A,
V
CE
= 5 V
BCV 28
BCV 48
V
Collector-emitter breakdown voltage
I
C
= 10 mA
BCV 28
BCV 48
V
(BR)CE0
30
60
–
–
–
–
nA
nA
µ
A
µ
A
Collector cutoff current
V
CB
= 30 V
BCV 28
V
CB
= 60 V
BCV 48
V
CB
= 30 V,
T
A
= 150 ˚C
BCV 28
V
CB
= 60 V,
T
A
= 150 ˚C
BCV 48
I
CB0
–
–
–
–
–
–
–
–
100
100
10
10
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
I
C
= 100
µ
A
BCV 28
BCV 48
V
(BR)CB0
40
80
–
–
–
–
Emitter-base breakdown voltage,
I
E
= 10
µ
A
V
(BR)EB0
10
–
–
V
Collector-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 0.1 mA
V
CEsat
–
–
1
–
h
FE
4000
2000
10000
4000
20000
10000
4000
2000
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Base-emitter saturation voltage
1)
I
C
= 100 mA;
I
B
= 0.1 mA
V
BEsat
–
–
1.5
nA
Emitter cutoff current,
V
EB
= 4 V
I
EB0
–
–
100
MHz
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 20 MHz
f
T
–
200
–
AC characteristics
pF
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
C
obo
–
4.5
–
1)
Pulse test:
t
≤
300
µ
s,
D
= 2 %.
Semiconductor Group
4
BCV 28
BCV 48
Collector-emitter saturation voltage
I
C
=
f
(
V
CEsat
)
h
FE
= 1000
Collector-base capacitance
C
CB0
=
f
(
V
CB0
)
Emitter-base capacitance
C
EB0
=
f
(
V
EB0
)
Base-emitter saturation voltage
I
C
=
f
(
V
BEsat
)
h
FE
= 1000
DC current gain
h
FE
=
f
(
I
C
)
V
CE
= 5 V
