background image
T
T1
HiRel
Silicon Schottky Diode
BAT 15
Semiconductor Group
1
Draft A03 1998-04-01
Features
¥
HiRel
Discrete and Microwave Semiconductor
¥ Medium barrier diodes for detector and mixer
applications
¥ Hermetically sealed microwave package
¥
qualified
¥ ESA/SCC Detail Spec. No.: 5106/014
ESD:
E
lectro
s
tatic
d
ischarge sensitive device,
observe handling precautions!
(ql) Quality Level:
P: Professional Quality,
Ordering Code: Q62702A1178
H: High Rel Quality,
Ordering Code: on request
S: Space Quality,
Ordering Code: on request
ES: ESA Space Quality,
Ordering Code: Q62702A1180
(see
Chapter Order Instructions
for ordering example)
Type
Marking
Ordering Code
Pin Configuration
Package
BAT 15-013 (ql)
-
see below
T
BAT 15-014 (ql)
-
see below
see BAT15-013
T1
BAT 15-033 (ql)
BAT 15-034 (ql)
-
-
see below
see below
see BAT15-013
see BAT15-013
T
T1
BAT 15-043 (ql)
BAT 15-044 (ql)
-
-
see below
see below
see BAT15-013
see BAT15-013
T
T1
BAT 15-063 (ql)
BAT 15-064 (ql)
-
-
see below
see below
see BAT15-013
see BAT15-013
T
T1
BAT 15-073 (ql)
BAT 15-074 (ql)
-
-
see below
see below
see BAT15-013
see BAT15-013
T
T1
BAT 15-093 (ql)
BAT 15-094 (ql)
-
-
see below
see below
see BAT15-013
see BAT15-013
T
T1
BAT 15-103 (ql)
BAT 15-104 (ql)
-
-
see below
see below
see BAT15-013
see BAT15-013
T
T1
BAT 15-113 (ql)
BAT 15-114 (ql)
-
-
see below
see below
see BAT15-013
see BAT15-013
T
T1
BAT 15-123 (ql)
BAT 15-124 (ql)
-
-
see below
see below
see BAT15-013
see BAT15-013
T
T1
background image
BAT 15
Semiconductor Group
2
Draft A03 1998-04-01
1)
Quoted for a single discharge of torry line during the first 2.4 ns current flow in the forward direction. General
criterion for burn-out energy is a 3 dB increase in noise figure.
Table 1
Maximum Ratings
Parameter
Symbol
Limit Values
Unit
Reverse voltage
V
R
3
V
Forward current
BAT15-013, -014, -033, -034
BAT15-043, -044, -063, -064
BAT15-073, -074, -093, -094
BAT15-103, -104, -113, -114
BAT15-123, -124
I
F
100
100
50
50
50
mA
Power dissipation
BAT15-013, -014, -033, -034
BAT15-043, -044, -063, -064
BAT15-073, -074, -093, -094
BAT15-103, -104, -113, -114
BAT15-123, -124
P
tot
100
100
50
50
50
mW
Operating temperature range
T
op
-
55 to + 150
°
C
Storage temperature range
T
stg
-
65 to + 175
°
C
Soldering temperature
T
sol
+ 220
°
C
Burn-out energy
1)
BAT15-013, -014, -033, -034
BAT15-043, -044, -063, -064
BAT15-073, -074, -093, -094
BAT15-103, -104, -113, -114
BAT15-123, -124
E
B
5.0
5.0
2.0
2.0
1.0
Erg
background image
BAT 15
Semiconductor Group
3
Draft A03 1998-04-01
Electrical Characteristics
Table 2
DC Characteristics
at
T
A
= 25
°
C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Breakdown voltage
I
R
= 10
m
A
V
(BR)
3
-
-
V
Reverse current
V
R
= 2 V
BAT15-013, -014, -033, -034
BAT15-043, -044, -063, -064
BAT15-073, -074, -093, -094
BAT15-103, -104, -113, -114
BAT15-123, -124
I
R
-
-
-
-
-
-
-
-
-
-
5
5
5
1
1
m
A
Forward voltage 1
I
F1
= 0.01 mA
BAT15-013, -014, -033, -034
BAT15-043, -044, -063, -064
BAT15-073, -074, -093, -094
BAT15-103, -104, -113, -114
BAT15-123, -124
V
F1
-
-
-
-
-
-
-
-
-
-
0.15
0.17
0.18
0.19
0.20
V
Forward voltage 2
I
F2
= 1 mA
BAT15-013, -014, -033, -034
BAT15-043, -044, -063, -064
BAT15-073, -074, -093, -094
BAT15-103, -104, -113, -114
BAT15-123, -124
V
F2
-
-
-
-
-
0.23
0.27
0.29
0.30
0.31
0.28
0.30
0.31
0.32
0.33
V
background image
BAT 15
Semiconductor Group
4
Draft A03 1998-04-01
2)
Series resistance
2)
I
F1
= 10 mA,
I
F2
= 50 mA
BAT15-013, -014
BAT15-033, -034
BAT15-043, -044
BAT15-063, -064
BAT15-073, -074
BAT15-093, -094
BAT15-103, -104
BAT15-113, -114
BAT15-123, -124
R
F
-
-
-
-
-
-
-
-
-
3.0
4.0
3.5
4.5
4.5
5.5
6.0
7.0
8.0
3.5
4.5
4.0
5.0
5.5
6.5
7.0
8.0
9.0
W
Table 2
DC Characteristics
at
T
A
= 25
°
C unless otherwise specified
(contÕd)
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
R
F
D
V
F
40
10
3
Ð
´
-------------------------
W
=
background image
BAT 15
Semiconductor Group
5
Draft A03 1998-04-01
Table 3
AC Characteristics
at
T
A
= 25
°
C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Total capacitance
V
R
= 0 V,
f
= 1 MHz
BAT15-013, -014, -033, -034
BAT15-043, -044, -063, -064
BAT15-073, -074, -093, -094
BAT15-103, -104, -113, -114
BAT15-123, -124
C
T
-
-
-
-
-
0.35
0.30
0.27
0.23
0.20
0.60
0.35
0.30
0.25
0.22
pF
Noise figure
I.F. = 30 MHz
LO power = 0 dBm
LO = 9.375 GHz
BAT15-013, -014
BAT15-033, -034
BAT15-043, -044
BAT15-063, -064
BAT15-073, -074
BAT15-093, -094
BAT15-103, -104
BAT15-113, -114
BAT15-123, -124
NF
-
-
-
-
-
-
-
-
-
5.3
6.3
5.3
6.3
5.3
6.3
5.7
7.2
8.0
5.5
6.5
5.5
6.5
5.5
6.5
6.0
7.5
9.0
dB
background image
BAT 15
Semiconductor Group
6
Draft A03 1998-04-01
Order Instructions
Full type variant including type variant and quality level must be specified by the orderer.
For HiRel Discrete and Microwave Semiconductors the ordering code specifies device
family and quality level only.
Ordering Form:
Ordering Code: QÉ
BAT15- (x) (ql)
(x): Type Variant
(ql): Quality Level
Ordering Example:
Ordering Code: Q62702A1180
BAT15-014 ES
For BAT15-014 in T1 Package; ESA Space Quality Level
Further Information
See our WWW-Pages:
Ð Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
Ð HiRel Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division:
Tel.: ++89 6362 4480
Fax.: ++89 6362 5568
e-mail: martin.wimmers@hl.siemens.de
background image
BAT 15
Semiconductor Group
7
Draft A03 1998-04-01
Figure 1
T Package
Symbol
Millimetre
min.
max.
A
1.30
1.45
B
1.15
1.35
C
-
0.40
background image
BAT 15
Semiconductor Group
8
Draft A03 1998-04-01
Figure 2
T1 Package
Symbol
Millimetre
min.
max.
A
1.30
1.45
B
1.15
1.35
C
-
0.40
D
0.10
0.50
E
-
0.30
F
0.06
0.10
G
5.50
-
H
0.40
0.60

Document Outline