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1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER
©
is a Copyright of Analogy Inc. 1-888-INTERSIL or 407-727-9207
|
Copyright
©
Intersil Corporation 1999.
File Number
4665.1
HUF76409D3, HUF76409D3S
17A, 60V, 0.071 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
Packaging
Symbol
Features
• Ultra Low On-Resistance
- r
DS(ON)
= 0.063
Ω,
V
GS
=
10V
- r
DS(ON)
= 0.071
Ω,
V
GS
=
5V
• Simulation Models
- Temperature Compensated PSPICE
®
and SABER
©
Electrical Models
- Spice and SABER
©
Thermal Impedance Models
- www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R
GS
Curves
Ordering Information
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
JEDEC TO-251AA
JEDEC TO-252AA
DRAIN
(FLANGE)
DRAIN
SOURCE
HUF76409D3
GATE
HUF76409D3S
GATE
SOURCE
DRAIN
(FLANGE)
D
G
S
PART NUMBER
PACKAGE
BRAND
HUF76409D3
TO-251AA
76409D
HUF76409D3S
TO-252AA
76409D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76409D3ST.
HUF76409D3, HUF76409D3SS
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
60
V
Drain to Gate Voltage (R
GS
= 20k
Ω
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
60
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±
16
V
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 135
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 135
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
17
18
8
8
Figure 4
A
A
A
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
49
0.327
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
October 1999
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2
HUF76409D3, HUF76409D3S
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
µ
A, V
GS
= 0V (Figure 12)
60
-
-
V
I
D
= 250
µ
A, V
GS
= 0V , T
C
= -40
o
C (Figure 12)
55
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 55V, V
GS
= 0V
-
-
1
µ
A
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C
-
-
250
µ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
16V
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
µ
A (Figure 11)
1
-
3
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 18A, V
GS
= 10V (Figures 9, 10)
-
0.052
0.063
Ω
I
D
= 8A, V
GS
= 5V (Figure 9)
-
0.060
0.071
Ω
I
D
= 8A, V
GS
= 4.5V (Figure 9)
-
0.064
0.075
Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
TO-251AA, TO-252AA
-
-
3.06
o
C/W
Thermal Resistance Junction to
Ambient
R
θ
JA
-
-
100
o
C/W
SWITCHING SPECIFICATIONS (V
GS
= 4.5V)
Turn-On Time
t
ON
V
DD
= 30V, I
D
= 8A
V
GS
=
4.5V, R
GS
= 22
Ω
(Figures 15, 21, 22)
-
-
153
ns
Turn-On Delay Time
t
d(ON)
-
13
-
ns
Rise Time
t
r
-
89
-
ns
Turn-Off Delay Time
t
d(OFF)
-
22
-
ns
Fall Time
t
f
-
37
-
ns
Turn-Off Time
t
OFF
-
-
89
ns
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 30V, I
D
= 18A
V
GS
=
10V,
R
GS
= 24
Ω
(Figures 16, 21, 22)
-
-
59
ns
Turn-On Delay Time
t
d(ON)
-
5.3
-
ns
Rise Time
t
r
-
34
-
ns
Turn-Off Delay Time
t
d(OFF)
-
41
-
ns
Fall Time
t
f
-
50
-
ns
Turn-Off Time
t
OFF
-
-
136
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 30V,
I
D
= 8A,
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
12
15
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
6.8
8.2
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
0.54
0.65
nC
Gate to Source Gate Charge
Q
gs
-
1.7
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
3
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
485
-
pF
Output Capacitance
C
OSS
-
130
-
pF
Reverse Transfer Capacitance
C
RSS
-
28
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 8A
-
-
1.25
V
I
SD
= 4A
-
-
1.0
V
Reverse Recovery Time
t
rr
I
SD
= 8A, dI
SD
/dt = 100A/
µ
s
-
-
70
ns
Reverse Recovered Charge
Q
RR
I
SD
= 8A, dI
SD
/dt = 100A/
µ
s
-
-
165
nC
HUF76409D3, HUF76409D3S
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3
HUF76409D3, HUF76409D3S
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
5
10
20
25
50
75
100
125
150
175
0
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
V
GS
= 4.5V
15
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
2
t, RECTANGULAR PULSE DURATION (s)
Z
θ
JC
, NORMALIZED
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
THERMAL IMPED
ANCE
100
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
200
10
I
DM
, PEAK CURRENT (A)
t, PULSE WIDTH (s)
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
I = I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 5V
HUF76409D3, HUF76409D3S
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4
HUF76409D3, HUF76409D3S
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
100
µ
s
1
10
100
1
10
0.1
100
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED T
C
= 25
o
C
SINGLE PULSE
10
60
0.01
0.1
1
10
100
1
I
AS
, A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
5
10
15
20
1.0
3.0
4.0
5.0
0
I
D,
DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
2.0
5
10
15
20
0
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 4V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
0
1
2
3
4
0
V
GS
= 3.5V
T
C
= 25
o
C
V
GS
= 5V
V
GS
= 10V
50
60
80
2
4
6
8
10
40
I
D
= 7A
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(ON)
, DRAIN T
O
SOURCE
ON RESIST
ANCE (m
Ω
)
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
I
D
= 17A
I
D
= 12A
70
1.0
1.5
2.0
2.5
-80
-40
0
40
80
120
160
200
0.5
NORMALIZED DRAIN T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESIST
ANCE
V
GS
= 10V, I
D
= 18A
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
HUF76409D3, HUF76409D3S
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5
HUF76409D3, HUF76409D3S
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Typical Performance Curves
(Continued)
0.8
1.0
1.2
-80
-40
0
40
80
120
160
200
0.4
NORMALIZED GA
TE
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
µ
A
THRESHOLD V
O
L
T
A
G
E
0.6
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
0.9
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
G
E
I
D
= 250
µ
A
100
2000
0.1
1.0
10
60
10
C, CAP
A
CIT
ANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
≅
C
DS
+ C
GD
C
RSS
=
C
GD
1000
2
4
6
8
10
0
3
6
9
12
15
0
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
Q
g
, GATE CHARGE (nC)
V
DD
= 30V
I
D
= 17A
I
D
= 12A
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 7A
150
0
10
20
30
40
50
0
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (
Ω
)
V
GS
= 4.5V, V
DD
= 30V, I
D
= 8A
t
r
t
f
t
d(ON)
t
d(OFF)
120
30
60
90
20
40
60
100
0
10
20
30
40
50
0
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (
Ω
)
V
GS
= 10V, V
DD
= 30V, I
D
= 18A
t
r
t
d(ON)
t