6-178
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a Trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
HUF76145P3, HUF76145S3S
75A, 30V, 0.0045 Ohm
,
N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76145.
Features
• Logic Level Gate Drive
• 75A, 30V
• Ultra Low On-Resistance, r
DS(ON)
= 0.0045
Ω
• Temperature Compensating PSPICE™ Model
• Temperature Compensating SABER Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF76145P3
TO-220AB
76145P
HUF76145S3S
TO-263AB
76145S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF76145S3ST.
D
G
S
DRAIN
SOURCE
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
September 1999
Data Sheet
File Number
4401.7
6-179
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
30
V
Drain to Gate Voltage (R
GS
= 20k
Ω
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
30
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
±
16
V
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
75
75
75
Figure 4
A
A
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
270
2.17
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-40 to 150
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
µ
A, V
GS
= 0V (Figure 12)
30
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 25V, V
GS
= 0V
-
-
1
µ
A
V
DS
= 25V, V
GS
= 0V, T
C
= 150
o
C
-
-
250
µ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
16V
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
µ
A (Figure 11)
1
-
3
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 75A, V
GS
= 10V (Figure 9, 10)
-
0.0035
0.0045
Ω
I
D
= 75A, V
GS
= 5V (Figure 9)
-
0.0043
0.0058
Ω
I
D
= 75A, V
GS
= 4.5V (Figure 9)
-
0.0046
0.0065
Ω
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
(Figure 3)
-
-
0.46
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
TO-220 and TO-263
-
-
62
o
C/W
SWITCHING SPECIFICATIONS (V
GS
= 4.5V)
Turn-On Time
t
ON
V
DD
= 15V, I
D
≅
75A,
R
L
= 0.20
Ω
, V
GS
=
4.5V,
R
GS
= 2.5
Ω
(Figures 15, 20, 21)
-
-
255
ns
Turn-On Delay Time
t
d(ON)
-
26
-
ns
Rise Time
t
r
-
145
-
ns
Turn-Off Delay Time
t
d(OFF)
-
35
-
ns
Fall Time
t
f
-
39
-
ns
Turn-Off Time
t
OFF
-
-
110
ns
HUF76145P3, HUF76145S3S
6-180
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 15V, I
D
≅
75A,
R
L
= 0.20
Ω
, V
GS
=
10V,
R
GS
= 2.2
Ω
(Figures 16, 20, 21)
-
-
110
ns
Turn-On Delay Time
t
d(ON)
-
16
-
ns
Rise Time
t
r
-
57
-
ns
Turn-Off Delay Time
t
d(OFF)
-
53
-
ns
Fall Time
t
f
-
38
-
ns
Turn-Off Time
t
OFF
-
-
135
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 15V,
I
D
≅
75A,
R
L
= 0.20
Ω
I
g(REF)
= 1.0mA
(Figures 14, 19, 20)
-
130
156
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
73
88
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
4.65
5.6
nC
Gate to Source Gate Charge
Q
gs
-
12.30
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
40.00
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
4900
-
pF
Output Capacitance
C
OSS
-
2520
-
pF
Reverse Transfer Capacitance
C
RSS
-
560
-
pF
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 75A
-
-
1.25
V
Reverse Recovery Time
t
rr
I
SD
= 75A, dI
SD
/dt = 100A/
µ
s
-
-
115
ns
Reverse Recovered Charge
Q
RR
I
SD
= 75A, dI
SD
/dt = 100A/
µ
s
-
-
255
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
T
A
, AMBIENT TEMPERATURE (
o
C)
PO
WER DISSIP
A
TION MUL
TIPLIER
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
40
0
25
50
75
100
125
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
80
150
20
60
V
GS
=10V
V
GS
=4.5V
50
HUF76145P3, HUF76145S3S
6-181
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
Typical Performance Curves
(Continued)
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-1
10
0
2
0.1
1
10
-2
Z
θ
JC
, NORMALIZED
THERMAL IMPED
ANCE
0.01
10
-4
10
-3
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
10
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
T
C
= 25
o
C
I
=
I
25
150 - T
C
125
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
DM
, PEAK CURRENT (A)
5000
50
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, PULSE WIDTH (s)
100
V
GS
= 5V
1000
V
GS
=10V
T
J
= MAX RATED
T
C
= 25
o
C
100
µ
s
10ms
1ms
BV
DSS(MAX)
= 30V
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
1000
5000
100
I
D
, DRAIN CURRENT (A)
10
1
10
100
100
0.1
1000
10
I
AS
, A
V
ALANCHE CURRENT (A)
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0.01
HUF76145P3, HUF76145S3S
6-182
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0
2
3
4
5
1
0
60
120
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
150
o
C
-40
o
C
25
o
C
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
150
90
30
0
30
60
0
2
3
4
90
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3.5V
V
GS
= 3V
150
1
120
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 5V
V
GS
= 10V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
10
20
0
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
6
10
8
I
D
= 75A
I
D
= 50A
I
D
= 25A
r
DS(ON)
, DRAIN T
O
SOURCE
ON RESIST
ANCE (m
Ω
)
5
15
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
0.6
1.2
1.5
1.8
-60
0
60
120
NORMALIZED DRAIN T
O
SOURCE
T
J
, JUNCTION TEMPERATURE (
o
C)
ON RESIST
ANCE
180
0.9
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 75A
-60
0
60
120
0.4
0.6
1.0
1.4
NORMALIZED GA
TE
T
J
, JUNCTION TEMPERATURE (
o
C)
THRESHOLD V
O
L
T
A
GE
V
GS
= V
DS
, I
D
= 250
µ
A
180
0.8
1.2
T
J
, JUNCTION TEMPERATURE (
o
C)
1.2
1.1
1.0
0.9
-60
0
60
120
T
J
, JUNCTION TEMPERATURE (
o
C)
NORMALIZED DRAIN T
O
SOURCE
BREAKDO
WN V
O
L
T
A
G
E
I
D
= 250
µ
A
180
HUF76145P3, HUF76145S3S
6-183
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
FIGURE 15. SWITCHING TIME vs GATE RESISTANCE
FIGURE 16. SWITCHING TIME vs GATE RESISTANCE
Test Circuits and Waveforms
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
(Continued)
C
OSS
8000
4000
0
0
5
15
25
C, CAP
A
CIT
ANCE (pF)
6000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2000
30
C
ISS
C
RSS
10
20
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
10
8
6
4
0
V
GS
, GA
TE T
O
SOURCE V
O
L
T
A
GE (V)
V
DD
= 15V
2
120
160
0
Q
g
, GATE CHARGE (nC)
40
I
D
= 75A
I
D
= 50A
I
D
= 25A
WAVEFORMS IN
DESCENDING ORDER:
80
200
20
30
40
50
0
1200
800
400
0
10
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (
Ω
)
t
d(OFF
t
d(ON)
t
r
t
f
V
GS
= 4.5V, V
DD
= 15V, I
D
= 75A, R
L
= 0.20
Ω
1000
600
400
20
30
40
50
0
1000
800
600
0
10
SWITCHING TIME (ns)
R
GS
, GATE TO SOURCE RESISTANCE (
Ω
)
t
d(OFF)
t
d(ON)
t
r