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4-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
FRM230D, FRM230R,
FRM230H
8A, 200V, 0.50 Ohm, Rad Hard,
N-Channel Power MOSFETs
File Number
3249.2
Package
TO-204AA
Symbol
D
G
S
Features
• 8A, 200V, RDS(on) = 0.50
Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
- Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current
- 3.0nA Per-RAD(Si)/sec Typically
• Neutron
- Pre-RAD Specifications for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Description
The Intersil Corporation has designed a series of SECOND GENERATION hard-
ened power MOSFETs of both N and P channel enhancement types with ratings
from 100V to 500V, 1A to 60A, and on resistance as low as 25m
Ω
. Total dose
hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness
ranging from 1E13n/cm
2
for 500V product to 1E14n/cm
2
for 100V product. Dose
rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and
2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
o
)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
Absolute Maximum Ratings
(TC = +25
o
C) Unless Otherwise Specified
FRM230D, R, H
UNITS
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
200
V
Drain-Gate Voltage (RGS = 20k
Ω
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
200
V
Continuous Drain Current
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
8
5
A
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
24
A
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±
20
V
Maximum Power Dissipation
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75
30
0.60
W
W
W/
o
C
Inductive Current, Clamped, L = 100
µ
H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM
24
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
8
A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
24
A
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
-55 to +150
o
C
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
o
C
June 1998
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4-2
Pre-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
200
-
V
Gate-Threshold Volts
VGS(th)
VDS = VGS, ID = 1mA
2.0
4.0
V
Gate-Body Leakage Forward
IGSSF
VGS = +20V
-
100
nA
Gate-Body Leakage Reverse
IGSSR
VGS = -20V
-
100
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = 200V, VGS = 0
VDS = 160V, VGS = 0
VDS = 160V, VGS = 0, TC = +125
o
C
-
-
-
1
0.025
0.25
mA
Rated Avalanche Current
IAR
Time = 20
µ
s
-
24
A
Drain-Source On-State Volts
VDS(on)
VGS = 10V, ID = 8A
-
4.20
V
Drain-Source On Resistance
RDS(on)
VGS = 10V, ID = 5A
-
.50
Ω
Turn-On Delay Time
td(on)
VDD = 100V, ID = 8A
-
30
ns
Rise Time
tr
Pulse Width = 3
µ
s
-
130
Turn-Off Delay Time
td(off)
Period = 300
µ
s, Rg = 25
Ω
-
150
Fall Time
tf
0
≤
VGS
≤
10 (See Test Circuit)
-
80
Gate-Charge Threshold
QG(th)
VDD = 100V, ID = 8A
IGS1 = IGS2
0
≤
VGS
≤
20
1
4
nc
Gate-Charge On State
QG(on)
15
60
Gate-Charge Total
QGM
30
120
Plateau Voltage
VGP
3
14
V
Gate-Charge Source
QGS
3
14
nc
Gate-Charge Drain
QGD
7
29
Diode Forward Voltage
VSD
ID = 8A, VGD = 0
0.6
1.8
V
Reverse Recovery Time
TT
I = 8A; di/dt = 100A/
µ
s
-
600
ns
Junction-To-Case
R
θ
jc
-
1.67
o
C/W
Junction-To-Ambient
R
θ
ja
Free Air Operation
-
60
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
P
V
GS
≤
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
Ω
50
Ω
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
FRM230D, FRM230R, FRM230H
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4-3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRM230D, R
VGS = 0, ID = 1mA
200
-
V
(Note 5, 6)
BVDSS
FRM230H
VGS = 0, ID = 1mA
190
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRM230D, R
VGS = VDS, ID = 1mA
2.0
4.0
V
(Note 3, 5, 6)
VGS(th)
FRM230H
VGS = VDS, ID = 1mA
1.5
4.5
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRM230D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRM230H
VGS = 20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRM230D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRM230H
VGS = -20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain CurrenT
(Note 4, 6)
IDSS
FRM230D, R
VGS = 0, VDS = 160V
-
25
µ
A
(Note 5, 6)
IDSS
FRM230H
VGS = 0, VDS = 160V
-
100
µ
A
Drain-Source
On-state Volts
(Note 1, 4, 6)
VDS(on)
FRM230D, R
VGS = 10V, ID = 8A
-
4.20
V
(Note 1, 5, 6)
VDS(on)
FRM230H
VGS = 16V, ID = 8A
-
6.30
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRM230D, R
VGS = 10V, ID = 5A
-
0.500
Ω
(Note 1, 5, 6)
RDS(on)
FRM230H
VGS = 14V, ID = 5A
-
0.750
Ω
NOTES:
1. Pulse test, 300
µ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13
5. Gamma = 1000KRAD(Si). Neutron = 1E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 3/03/90 on TA17632 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA
19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
FRM230D, FRM230R, FRM230H
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4-4
Typical Performance Characteristics
FRM230D, FRM230R, FRM230H
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4-5
FRM230D, FRM230R, FRM230H
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
1. Rad Hard TXV Equivalent - Standard Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
D. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
G. Group D
- Attributes Data Sheet
2. Rad Hard TXV Equivalent - Optional Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
D. Group A
- Attributes Data Sheet
- Group A Lot Traveler
E. Group B
- Attributes Data Sheet
- Group B Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
- Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
G. Group D
- Attributes Data Sheet
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
Class S - Equivalents
1. Rad Hard “S” Equivalent - Standard Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E.
Preconditioning Attributes Data Sheet
Hi-Rel Lot Traveler
HTRB - Hi Temp Gate Stress Post Reverse
Bias Data and Delta Data
HTRB - Hi Temp Drain Stress Post Reverse
Bias Delta Data
F. Group A
- Attributes Data Sheet
G. Group B
- Attributes Data Sheet
H. Group C
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
2. Rad Hard Max. “S” Equivalent - Optional Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
I. Group D
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Pre and Post Radiation Data
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4-6
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
TO-204AA
JEDEC TO-204AA HERMETIC STEEL PACKAGE
ØD
Ø
b
A
SEATING
PLANE
ØP
Ø
b
1
s
q
R
1
R
e
e
1
L
1
2
A
1
TERM. 3
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.310
0.330
7.88
8.38
-
A
1
0.060
0.065
1.53
1.65
-
Øb
0.038
0.042
0.97
1.06
2, 3
Øb
1
0.138
0.145
3.51
3.68
-
ØD
-
0.800
-
20.32
-
e
0.215 TYP
5.46 TYP
4
e
1
0.430 BSC
10.92 BSC
4
L
0.430
-
10.93
-
-
ØP
0.155
0.160
3.94
4.06
-
q
1.187 BSC
30.15 BSC
-
R
0.495
0.525
12.58
13.33
-
R
1
0.131
0.185
3.33
4.69
-
s
0.655
0.675
16.64
17.14
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. C of
JEDEC TO-204AA outline dated 11-82.
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of seating plane.
5. Controlling dimension: Inch.
6. Revision 2 dated 6-93.
FRM230D, FRM230R, FRM230H