4-1
FRF9150D, FRF9150R,
FRF9150H
23A, -100V, 0.140 Ohm, Rad Hard,
P-Channel Power MOSFETs
File Number
3243.2
Package
TO-254AA
Symbol
D
S
G
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
D
S
G
Features
• 23A, -100V, r
DS(ON)
= 0.140
Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si)
- Performance Permits Limited Use to 3000K RAD (Si)
• Gamma Dot
- Survives 3E9 RAD (Si)/s at 80% BV
DSS
Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current
- 7.0nA Per-RAD (Si)/s Typically
• Neutron
- Pre-RAD Specifications for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Description
Intersil Corporation has designed a series of SECOND GENERATION hardened
power MOSFETs of both N and P channel enhancement types with ratings from
100V to 500V, 1A to 60A, and on resistance as low as 25m
Ω
. Total dose hardness
is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging
from 1E13n/cm
2
for 500V product to 1E14n/cm
2
for 100V product. Dose rate hard-
ness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with
current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
o
)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for
any desired deviations from the data sheet.
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
FRF9150D, R, H
UNITS
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
-100
V
Drain-Gate Voltage (R
GS
= 20k
Ω
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
-100
V
Continuous Drain Current
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
23
15
A
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
69
A
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±
20
V
Maximum Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
T
C
= +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125
50
1.00
W
W
W/
o
C
Inductive Current, Clamped, L = 100
µ
H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . .I
LM
69
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
23
A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
69
A
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
JC
, T
STG
-55 to +150
o
C
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
300
o
C
June 1998
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
4-2
Pre-Radiation Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source Breakdown Volts
BV
DSS
V
GS
= 0, I
D
= 1mA
-100
-
V
Gate-Threshold Volts
V
GS(TH)
V
DS
= V
GS
, I
D
= 1mA
-2.0
-4.0
V
Gate-Body Leakage Forward
I
GSSF
V
GS
= -20V
-
100
nA
Gate-Body Leakage Reverse
I
GSSR
V
GS
= +20V
-
100
nA
Zero-Gate Voltage
Drain Current
I
DSS1
I
DSS2
I
DSS3
V
DS
= -100V, V
GS
= 0
V
DS
= -80V, V
GS
= 0
V
DS
= -80V, V
GS
= 0, T
C
= +125
o
C
-
-
-
1
0.025
0.25
mA
Rated Avalanche Current
I
AR
Time = 20
µ
s
-
69
A
Drain-Source On-State Volts
V
DS(ON)
V
GS
= -10V, I
D
= 23A
-
-3.38
V
Drain-Source On Resistance
r
DS(ON)
V
GS
= -10V, I
D
= 15A
-
0.140
Ω
Turn-On Delay Time
t
D(ON)
V
DD
= -50V, I
D
= 23A
-
170
ns
Rise Time
t
R
Pulse Width = 3
µ
s
-
620
Turn-Off Delay Time
t
D(OFF)
Period = 300
µ
s, R
G
= 25
Ω
-
600
Fall Time
t
F
0
≤
V
GS
≤
10 (See Test Circuit)
-
242
Gate-Charge Threshold
Q
G(TH)
V
DD
= -50V, I
D
= 23A
I
GS1
= I
GS2
0
≤
V
GS
≤
20
4
16
nc
Gate-Charge On State
Q
G(ON)
60
240
Gate-Charge Total
Q
GM
126
504
Plateau Voltage
V
GP
3
14
V
Gate-Charge Source
Q
GS
17
68
nc
Gate-Charge Drain
Q
GD
21
86
Diode Forward Voltage
V
SD
I
D
= 23A, V
GD
= 0
-0.6
-1.8
V
Reverse Recovery Time
t
T
I = 23A; di/dt = 100A/
µ
s
-
700
ns
Junction-To-Case
R
θ
JC
-
1.0
o
C/W
Junction-To-Ambient
R
θ
JA
Free Air Operation
-
48
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
V
DD
R
L
V
DS
DUT
R
GS
0V
V
GS
= -12V
t
P
V
GS
≤
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
Ω
50
Ω
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
FRF9150D, FRF9150R, FRF9150H
4-3
Post-Radiation Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Notes 4, 6)
BV
DSS
FRF9150D, R
V
GS
= 0, I
D
= 1mA
-100
-
V
(Notes 5, 6)
BV
DSS
FRF9150H
V
GS
= 0, I
D
= 1mA
-95
-
V
Gate-Source
Threshold Volts
(Notes 4, 6)
V
GS(TH)
FRF9150D, R
V
GS
= V
DS
, I
D
= 1mA
-2.0
-4.0
V
(Notes 3, 5, 6)
V
GS(TH)
FRF9150H
V
GS
= V
DS
, I
D
= 1mA
-2.0
-6.0
V
Gate-Body
Leakage Forward
(Notes 4, 6)
I
GSSF
FRF9150D, R
V
GS
= -20V, V
DS
= 0
-
100
nA
(Notes 5, 6)
I
GSSF
FRF9150H
V
GS
= -20V, V
DS
= 0
-
200
nA
Gate-Body
Leakage Reverse
(Notes 2, 4, 6)
I
GSSR
FRF9150D, R
V
GS
= 20V, V
DS
= 0
-
100
nA
(Notes 2, 5, 6)
I
GSSR
FRF9150H
V
GS
= 20V, V
DS
= 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Notes 4, 6)
I
DSS
FRF9150D, R
V
GS
= 0, V
DS
= -80V
-
25
µ
A
(Notes 5, 6)
I
DSS
FRF9150H
V
GS
= 0, V
DS
= -80V
-
100
µ
A
Drain-Source
On-State Volts
(Notes 1, 4, 6)
V
DS(ON)
FRF9150D, R
V
GS
= -10V, I
D
= 23A
-
-3.38
V
(Notes 1, 5, 6)
V
DS(ON)
FRF9150H
V
GS
= -16V, I
D
= 23A
-
-5.07
V
Drain-Source
On Resistance
(Notes 1, 4, 6)
r
DS(ON)
FRF9150D, R
V
GS
= -10V, I
D
= 15A
-
0.140
Ω
(Notes 1, 5, 6)
r
DS(ON)
FRF9150H
V
GS
= -14V, I
D
= 15A
-
0.210
Ω
NOTES:
1. Pulse test, 300
µ
s (Max)
2. Absolute value
3. Gamma = 300K RAD (Si)
4. Gamma = 10K RAD (Si) for “D”, 100K RAD (Si) for “R”. Neutron = 3E13
5. Gamma = 1000K RAD (Si). Neutron = 3E13
6. In situ Gamma bias must be sampled for both V
GS
= -10V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
7. Gamma data taken 1/18/91 on TA 17751 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988
FRF9150D, FRF9150R, FRF9150H
4-4
Typical Performance Characteristics
FRF9150D, FRF9150R, FRF9150H
4-5
FRF9150D, FRF9150R, FRF9150H
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
1. Rad Hard TXV Equivalent - Standard Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
D. Group A
- Attributes Data Sheet
E. Group B
- Attributes Data Sheet
F. Group C
- Attributes Data Sheet
G. Group D
- Attributes Data Sheet
2. Rad Hard TXV Equivalent - Optional Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
D. Group A
- Attributes Data Sheet
- Group A Lot Traveler
E. Group B
- Attributes Data Sheet
- Group B Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group C
- Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
G. Group D
- Attributes Data Sheet
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
Class S - Equivalents
1. Rad Hard “S” Equivalent - Standard Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E.
Preconditioning Attributes Data Sheet
Hi-Rel Lot Traveler
HTRB - Hi Temp Gate Stress Post Reverse
Bias Data and Delta Data
HTRB - Hi Temp Drain Stress Post Reverse
Bias Delta Data
F. Group A
- Attributes Data Sheet
G. Group B
- Attributes Data Sheet
H. Group C
- Attributes Data Sheet
I. Group D
- Attributes Data Sheet
2. Rad Hard Max. “S” Equivalent - Optional Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
- X-Ray and X-Ray Report
F. Group A
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
G. Group B
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
H. Group C
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
I. Group D
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Pre and Post Radiation Data
4-6
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
FRF9150D, FRF9150R, FRF9150H
TO-254AA
3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE
D
L
Q
H
1
e
e
1
J
1
A
1
A
E
ØP
Ø
b
0.065 R MAX.
TYP.
1
2
3
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.249
0.260
6.33
6.60
-
A
1
0.040
0.050
1.02
1.27
-
Øb
0.035
0.045
0.89
1.14
2, 3
D
0.790
0.800
20.07
20.32
-
E
0.535
0.545
13.59
13.84
-
e
0.150 TYP
3.81 TYP
4
e
1
0.300 BSC
7.62 BSC
4
H
1
0.245
0.265
6.23
6.73
-
J
1
0.140
0.160
3.56
4.06
4
L
0.520
0.560
13.21
14.22
-
ØP
0.139
0.149
3.54
3.78
-
Q
0.110
0.130
2.80
3.30
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. A of
JEDEC outline TO-254AA dated 11-86.
2. Add typically 0.002 inches (0.05mm) for solder coating.
3. Lead dimension (without solder).
4. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
5. Die to base BeO isolated, terminals to case ceramic isolated.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
WARNING!
BERYLLIA WARNING PER MIL-S-19500
Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical
operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound
shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’
compounds.