BCW66
SMALL SIGNAL NPN TRANSISTORS
s
SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
s
MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
s
MEDIUM CURRENT AF AMPLIFICATION
AND SWITCHING
s
PNP COMPLEMENT IS BCW68
INTERNAL SCHEMATIC DIAGRAM
October 1997
1
2
3
SOT-23
Type
Marking
BCW66F
EF
BCW 66G
EG
BCW 66H
EH
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
V
CES
Collector-Emit ter Voltage (V
BE
= 0)
75
V
V
CEO
Collector-Emit ter Voltage (I
B
= 0)
45
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
0.8
A
I
CM
Collector Peak Current
1
A
I
B
Base Current
0.1
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
360
mW
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. O perat ing Junction Temperature
150
o
C
1/4
THERMAL DATA
R
t hj-am b
•
R
th j-SR
•
Thermal Resistance Junction-Ambient
Max
Thermal Resistance Junction-Substrat e
Max
375
278
o
C/W
o
C/W
•
Mounted on a ceramic substrate area = 0.7 mm x 2.5 cm
2
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CES
Collect or Cut-off
Current (V
BE
= 0)
V
CE
= Rated V
CES
V
CE
= Rated V
CES
T
amb
= 150
o
C
20
20
nA
µ
A
I
EBO
Collect or Cut-off
Current (I
E
= 0)
V
EB
= 4 V
20
nA
V
( BR)CEO
∗
Collect or-Emitter
Breakdown Volt age
(I
B
= 0)
I
C
= 10 mA
45
V
V
V
(BR)CES
∗
Collect or-Emitter
Breakdown Volt age
(V
EB
= 0)
I
C
= 10
µ
A
75
V
V
V
(BR)EBO
Emitt er-Base
Breakdown Volt age
(I
C
= 0)
I
C
= 10
µ
A
5
V
V
CE(sat )
∗
Collect or-Emitter
Saturat ion Voltage
I
C
= 100 mA
I
B
= 10 mA
I
C
= 500 mA
I
B
= 50 mA
0.3
0.7
V
V
V
BE(s at)
∗
Collect or-Base
Saturat ion Voltage
I
C
= 100 mA
I
B
= 10 mA
I
C
= 500 mA
I
B
= 50 mA
1.25
2
V
V
h
FE
∗
DC Current G ain
I
C
= 0. 1 mA
V
CE
= 10 V
for g rou p F
for g rou p G
for g rou p H
I
C
= 10 mA
V
CE
= 1 V
for g rou p F
for g rou p G
for g rou p H
I
C
= 100 mA
V
CE
= 1 V
for g rou p F
for g rou p G
for g rou p H
I
C
= 500 mA
V
CE
= 2 V
for g rou p F
for g rou p G
for g rou p H
35
50
80
75
110
180
100
160
250
35
60
100
250
400
630
f
T
Transit ion F requency
I
C
= 20 mA V
CE
= 10V f = 100MHz
100
MHz
C
CB
Collect or Base
Capacitance
I
E
= 0
V
CB
= 10 V
f = 1 MHz
12
pF
C
EB
Emitt er Base
Capacitance
I
C
= 0
V
CE
= 0.5 V
f = 1 MHz
80
pF
NF
Noise Figure
V
CE
= 5 V
I
C
= 0.2 mA
f = 1KHz
∆
f = 200 Hz
R
G
= 2 K
Ω
2
10
dB
t
on
Switching On Time
I
C
= 150 mA
I
B1
= -I
B2
=15 mA
R
L
= 150
Ω
100
ns
∗
Pulsed: Pulse duration = 300
µ
s, duty cycle
≤
2 %
BCW66
2/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
©
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
.
BCW66
4/4
