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PFR 850S
856S
FAST RECOVERY RECTIFIER DIODES
PRELIMINARY DATASHEET
LOW FORWARD VOLTAGE DROP
HIGH SURGE CURRENT CAPABILITY
APPLICATIONS
AC-DC POWER SUPPLIES AND CONVER-
TERS
FREE WHEELING DIODES, etc.
DESCRIPTION
Their high efficiency and high reliability combined
with small size and low cost make these fast reco-
very rectifier diodes very attractive components for
many demanding applications.
August 1996 - Ed: 1
DO-201AD
(Plastic)
Symbol
Parameter
Value
Unit
I
FRM
Repetitive Peak Forward Current
t
p
20
µ
s
100
A
I
F (AV)
Average Forward Current*
T
a =
90
°
C
δ
= 0.5
3
A
I
FSM
Surge non Repetitive Forward Current
t
p
= 10ms
Sinusoidal
100
A
P
tot
Power Dissipation*
T
a =
90
°
C
3.5
W
T
stg
T
j
Storage and Junction Temperature Range
- 40 to + 175
- 40 to + 175
°
C
T
L
Maximum Lead Temperature for Soldering during 10s at 4mm from
case
230
°
C
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol
Parameter
Value
Unit
R
th (j - a)
Junction-ambient*
25
°
C/W
THERMAL RESISTANCE
Symbol
Parameter
PFR
Unit
850S
851S
852S
854S
856S
V
RRM
Repetitive Peak Reverse Voltage
50
100
200
400
600
V
V
RSM
Non Repetitive Peak Reverse Voltage
75
150
250
450
650
V
* On infinite heatsink with 10mm lead length.
1/3
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2/3
Synbol
Test Conditions
Min.
Typ.
Max.
Unit
I
R
T
j
= 25
°
C
V
R
= V
RRM
10
µ
A
T
j
= 100
°
C
250
V
F
T
j
= 25
°
C
I
F
= 3A
1.25
V
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
t
rr
T
j
= 25
°
C
I
F
= 1A
PRF 850S
854S
150
ns
V
R
= 30V
di
F
/dt = - 25A/
µ
s
PRF 856S
200
I
RM
T
j
= 25
°
C
I
F
= 1A
2
A
V
R
= 30V
di
F
/dt = - 25A/
µ
s
RECOVERY CHARACTERISTICS
PFR 850S
856S
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
© 1996 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco -
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
PACKAGE MECHANICAL DATA
DO-201AD
B
A
E
E
ØD
ØD
ØC
B
note 2
note 1
note 1
REF.
DIMENSIONS
NOTES
Millimeters
Inches
Min.
Max.
Min.
Max.
A
9.50
0.374
1 - The lead diameter
D is not controlled over zone E
2 - The minimum axial lengh within which the device may be
placed with its leads bent at right angles is 0.59"(15 mm)
B
25.40
1.000
C
5.30
0.209
D
1.30
0.051
E
1.25
0.049
Weight : 1 g
Marking : Type number
White band indicates cathode
cooling method : by convertion (method A)
Date code
3/3
PFR 850S
856S