N-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2002
APM3009N
www.anpec.com.tw
1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
A P M 3 0 0 9 N
H a n d lin g C o d e
T e m p . R a n g e
P a c k a g e C o d e
P a c k a g e C o d e
F : T O -2 2 0 G : T O -2 6 3 U : T O -2 5 2
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 2 5 C
H a n d lin g C o d e
T U : T u b e
T R : T a p e & R e e l
°°°°
A P M 3 0 0 9 N F /G /U :
A P M 3 0 0 9 N
X X X X X
- D a te C o d e
X X X X X
Pin Description
Ordering and Marking Information
Features
Applications
Absolute Maximum Ratings
(T
A
= 25
°C unless otherwise noted)
•
30V/70A , R
DS(ON)
=7m
Ω(typ.) @ V
GS
=10V
R
DS(ON)
=11m
Ω(typ.) @ V
GS
=4.5V
•••••
Super High Dense Advanced Cell Design for
Extremely Low R
DS(ON)
•••••
Reliable and Rugged
•••••
TO-220 , TO-252 and TO-263 Packages
Symbol
Parameter
Rating
Unit
V
DSS
Drain-Source Voltage
30
V
GSS
Gate-Source Voltage
±20
V
I
D
*
Maximum Drain Current – Continuous
60
I
DM
Maximum Drain Current – Pulsed
110
A
* Surface Mounted on FR4 Board, t
≤ 10 sec.
•
Power Management in Desktop Computer or
DC/DC Converters.
Top View of TO-220, TO-252 and TO-263
G
D
S
1
2
3
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2002
APM3009N
www.anpec.com.tw
2
Notes
a
: Pulse test ; pulse width
≤300µs, duty cycle ≤ 2%
b
: Guaranteed by design, not subject to production testing
APM3009N
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
V lt
V
GS
=0V, I
DS
=250
µA
30
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=24V , V
GS
=0V
1
µA
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
DS
=250
µA
1
3
V
I
GSS
Gate Leakage Current
V
GS
=
±20V, V
DS
=0V
±100
nA
V
GS
=10V, I
DS
=35A
7
9
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=4.5V, I
DS
=20A
11
15
m
Ω
V
SD
a
Diode Forward Voltage
I
SD
=35A, V
GS
=0V
0.6
1.3
V
Dynamic
b
Q
g
Total Gate Charge
22
28
Q
gs
Gate-Source Charge
12.8
Q
gd
Gate-Drain Charge
V
DS
=15V, I
DS
=20A
V
GS
=4.5V,
5
nC
t
d(ON)
Turn-on Delay Time
10
15
T
r
Turn-on Rise Time
7
13
t
d(OFF)
Turn-off Delay Time
35
50
T
f
Turn-off Fall Time
V
DD
=15V, I
DS
=1A,
V
GEN
=10V, R
G
= 0.2
Ω
10
20
ns
C
iss
Input Capacitance
2400
C
oss
Output Capacitance
500
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=15V
Frequency =1.0MHz
240
pF
Symbol
Parameter
Rating
Unit
TO-252
50
T
A
=25°C
TO-263
62.5
TO-252
20
P
D
Maximum Power Dissipation
T
A
=100
°C
TO-263
25
W
T
J
,T
STG
Maximum Operating and Storage Junction Temperature
-55 to 150
°C
TO-252
50
R
θJA
Thermal Resistance – Junction to Ambient
TO-263
60
°C/W
TO-252
2.5
R
θJC
Thermal Resistance – Junction to Case
TO-263
2
°C/W
Absolute Maximum Ratings Cont.
(T
A
= 25
°C unless otherwise noted)
Electrical Characteristics
(T
A
= 25
°C unless otherwise noted)
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2002
APM3009N
www.anpec.com.tw
3
Typical Characteristics
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
70
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
10
20
30
40
50
0
10
20
30
40
50
60
70
80
90 100
0.000
0.003
0.006
0.009
0.012
0.015
-50
-25
0
25
50
75
100
125
150
0.4
0.6
0.8
1.0
1.2
Output Characteristics
V
DS
-Drain-to-Source Voltage (V)
I
DS
-Drain Current (A)
Transfer Characteristics
V
GS
-Gate-to-Source Voltage (V)
I
DS
-Drain Current (A)
Threshold Voltage vs. Junction Temperature
T
j
-Junction Temperature (
°C)
On-Resistance vs. Drain Current
I
D
-Drain Current (A)
R
DS(ON)
-On-Resistance (
Ω
)
V
GS
=10V
V
GS
=4.5V
I
DS
=250
µA
V
DS
=10V
T
J
=125
°C
T
J
=25
°C
T
J
=-55
°C
V
GS
=4,4.5,6,8,10V
V
GS
=2.5V
V
GS
=3V
V
GS(th)-
Threshold V
oltage (V)
(Normalized)
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2002
APM3009N
www.anpec.com.tw
4
-50
-25
0
25
50
75
100
125
150
4
5
6
7
8
9
10
0
10
20
30
40
50
0
2
4
6
8
10
Typical Characteristics Cont.
3
4
5
6
7
8
9
10
0.000
0.005
0.010
0.015
0.020
0.025
0.030
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
On-Resistance vs. Gate-to-Source Voltage
On-Resistaence vs. Junction Temperature
R
DS(ON)
-On Resistance (
Ω
)
(Normalized)
R
DS (ON)
-On-Resistance (
Ω
)
Gate Voltage (V)
T
j
-Junction Temperature (
°C)
Gate Charge
Q
G
-Total-Gate Charge (nC)
V
GS
-Gate-to-Source V
oltage (V)
I
DS
=35A
V
GS
=10V
I
DS
=35A
V
DS
=15V
I
DS
=20A
On-Resistaence vs. Junction Temperature
R
DS(ON)
-On Resistance (
Ω
)
T
j
-Junction Temperature (
°C)
V
GS
=10V
I
DS
=35A
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2002
APM3009N
www.anpec.com.tw
5
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
0.0
0.3
0.6
0.9
1.2
1.5
0.1
1
10
100
Typical Characteristics Cont.
Source-Drain Diode Forward Voltage
I
SD
-Source Current (A)
V
SD
-Source to Drain Voltage (V)
T
J
=-55
°C
T
J
=25
°C
T
J
=125
°C
Time (sec)
Single Pulse Power
Power (W)
Time (sec)
Single Pulse Power
Power (W)
TO-252
TO-263
100
1000
3000
2000
500
0.1
1
10
30
Capacitance Characteristics
V
DS
-Drain-to-Source Voltage (V)
C-Capacitance (pF)
Crss
Coss
Ciss
Frequency=1MHz
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0
500
1000
1500
2000
2500
3000
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2002
APM3009N
www.anpec.com.tw
6
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
0 .0 1
0 .1
1
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
0 .0 1
0 .1
1
Typical Characteristics Cont.
Square Wave Pulse Duration (sec)
Normalized Transient Thermal Transient Impedence, Junction to Ambient
D=0.1
Square Wave Pulse Duration (sec)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
thJA
=62.5
°C/W
3. T
JM
-T
A
=P
DM
Z
thJA
SINGLE PULSE
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
Duty Cycle=0.5
TO-263
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
thJA
=50
°C/W
3. T
JM
-T
A
=P
DM
Z
thJA
SINGLE PULSE
D=0.01
D=0.02
D=0.05
D=0.2
Duty Cycle=0.5
TO-252
Normalized Transient Thermal Transient Impedence, Junction to Ambient
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2002
APM3009N
www.anpec.com.tw
7
Package Informaion
TO-252( Reference JEDEC Registration TO-252)
Millimet ers
Inches
Dim
Min .
Max.
Min .
Max.
A
2.18
2.39
0.086
0.094
A1
0.89
1.27
0.035
0.050
b
0.508
0.89
0.020
0.035
b2
5.207
5.461
0.205
0.215
C
0.46
0.58
0.018
0.023
C1
0.46
0.58
0.018
0.023
D
5.334
6.22
0.210
0.245
E
6.35
6.73
0.250
0.265
e1
3.96
5.18
0.156
0.204
H
9.398
10.41
0.370
0.410
L
0.51
0.020
L1
0.64
1.02
0.025
0.040
L2
0.89
2.032
0.035
0.080
L2
D
L1
b
b2
E
C1
A
H
L
C
A1
e1
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2002
APM3009N
www.anpec.com.tw
8
TO-263 ( Reference JEDEC Registration TO-263)
Millimeters
Inches
Dim
Min.
Max.
Min.
Max.
A
4.06
4.83
0.160
0.190
b
0.51
1.016
0.02
0.040
b2
1.14
1.651
0.045
0.065
c
0.38 TYP.
0.015 TYP.
c2
1.14
1.40
0.045
0.055
D
8.64
9.65
0.340
0.380
E
9.65
10.54
0.380
0.415
L
14.60
15.88
0.575
0.625
L1
2.24
2.84
0.090
0.110
L2
1.02
2.92
0.040
0.112
L3
1.20
1.78
0.050
0.070
E
D
L
L2
L3
D1
E1
TERMINAL 4
c
A
c2
R
L1
L4
Φ 1
DETAIL "A"ROTED
Packaging Information Cont.
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2002
APM3009N
www.anpec.com.tw
9
Package Information Cont.
TO-220 ( Reference JEDEC Registration TO-220)
Q
D
R
E
F
J1
e
e1
b1
L1
A
c
b
H1
L
Millimeters
Inches
Dim
Min.
Max.
Min.
Max.
A
3.56
4.83
0.140
0.190
b1
1.14
1.78
0.045
0.070
b
0.51
1.14
0.020
0.045
c
0.31
1.14
0.012
0.045
D
14.23
16.51
0.560
0.650
e
2.29
2.79
0.090
0.110
e1
4.83
5.33
0.190
0.210
E
9.65
10.67
0.380
0.420
F
0.51
1.40
0.020
0.055
H1
5.84
6.86
0.230
0.270
J1
2.03
2.92
0.080
0.115
L
12.7
14.73
0.500
0.580
L1
3.65
6.35
0.143
0.250
R
3.53
4.09
0.139
0.161
Q
2.54
3.43
0.100
0.135
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2002
APM3009N
www.anpec.com.tw
10
Reference JEDEC Standard J-STD-020A APRIL 1999
Reflow Condition
(IR/Convection or VPR Reflow)
Physical Specifications
Pre-heat temperature
183 C
Peak temperature
Time
°
temperature
Convection or IR/
Convection
VPR
Average ramp-up rate(183
°C to Peak)
3
°C/second max.
10
°C /second max.
Preheat temperature 125
± 25°C)
120 seconds max.
Temperature maintained above 183
°C
60 ~ 150 seconds
Time within 5
°C of actual peak temperature
10 ~ 20 seconds
60 seconds
Peak temperature range
220 +5/-0
°C or 235 +5/-0°C
215~ 219
°C or 235 +5/-0°C
Ramp-down rate
6
°C /second max.
10
°C /second max.
Time 25
°C to peak temperature
6 minutes max.
pkg. thickness
≥≥≥≥ 2.5mm
and all bags
pkg. thickness < 2.5mm and
pkg. volume
≥≥≥≥ 350 mm
pkg. thickness < 2.5mm and pkg.
volume <
Convection220 +5/-0
°C
Convection 235 +5/-0
°C
VPR 215-219
°C
VPR 235 +5/-0°C
IR/Convection 220 +5/-0
°C
IR/Convection 235 +5/-0
°C
Classification Reflow Profiles
Package Reflow Conditions
Terminal Material
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Copyright ANPEC Electronics Corp.
Rev. A.3 - May., 2002
APM3009N
www.anpec.com.tw
11
Application
A
B
C
J
T1
T2
W
P
E
TO-252
330
±3
100
± 2
13
± 0. 5
2
± 0.5
16.4 +0.3
-0.2
2.5
± 0.5
16 + 0.3
16 - 0.1
8
± 0.1
1.75
± 0.1
Application
F
D
D1
Po
P1
Ao
Bo
Ko
t
TO-252
7.5
± 0.1
1.5
± 0.1 1.5+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1
0.3
±0.05
Application
A
B
C
J
T1
T2
W
P
E
TO-263
380
±3
80
± 2
13
± 0. 5
2
± 0.5
24
± 4
2
± 0.3
24 + 0.3
- 0.1
16
± 0.1 1.75± 0.1
Application
F
D
D1
Po
P1
Ao
Bo
Ko
t
TO-263
11.5
± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 10.8 ± 0.1 16.1± 0.1 5.2± 0.1 0.35±0.013
(mm)
A
J
B
T2
T1
C
t
Ao
E
W
Po
P
Ko
Bo
D1
D
F