183
RadHard MSI Logic
UT54ACS264/UT54ACTS264
Radiation-Hardened
Look-Ahead Carry Generators for Counters
FEATURES
Performs look-ahead carry across n-bit counters
Accommodates active-high or active-low carry
Improves cascaded counters system performance
radiation-hardened CMOS
- Latchup immune
High speed
Low power consumption
Single 5 volt supply
Available QML Q or V processes
Flexible package
- 16-pin DIP
- 16-lead flatpack
DESCRIPTION
The UT54ACS264 and the UT54ACTS264 are look-ahead gen-
erators designed specifically to perform a carry-anticipate
across any number of n-bit counters, thus increasing system
clock frequency. A carry enable CE, and carry outputs RCOA
and RCOB are provided for n-bit cascading.
Use the counter with either active-high-carry or active-low-car-
ry counters. For active-high-carry counters, CE is active high,
the A set of inputs and output RCOA are used. The B set of
inputs are connected to a low logic level. For active-low-carry
counters, CE is active low, the B set of inputs and output RCOB
are used. The A set of inputs are connected to a high logic level.
The devices are characterized over full military temperature
range of -55 C to +125 C.
PINOUTS
16-Pin DIP
Top View
16-Lead Flatpack
Top View
1
2
3
4
5
7
6
16
15
14
13
12
10
11
A1
B1
A0
B0
A3
B3
RCOB
V
DD
B2
A2
CE
C0
C1
RCOA
8
9
V
SS
C2
1
2
3
4
5
7
6
16
15
14
13
12
10
11
V
DD
A1
B1
A0
B0
A3
B3
RCOB
B2
A2
CE
C0
C1
RCOA
V
SS
C2
8
9
RadHard MSI Logic 184
UT54ACS264/UT54ACTS264
LOGIC SYMBOL
Notes:
1. Logic symbols in accordance with ANSI/IEEE Std 91-1984 and IEC
Publication 617-12.
FUNCTION TABLE FOR C0 OUTPUT
FUNCTION TABLE FOR C1 OUTPUT
FUNCTION TABLE FOR RCOB OUTPUT
FUNCTION TABLE FOR C2 OUTPUT
FUNCTION TABLE FOR RCOA OUTPUT
(12)
C0
(11) C1
(9)
C2
(10)
RCOA
(7)
RCOB
1
1
1
1
1
1,3
2,3
1,3,5
2,3,5
4,5
1,3,5,7
2,3,5,7
4,5,7
6,7
1,3,5,7,
4,5,7,9
6,7,9
8,9
1
2
4
6
8
(13)
CE
(4)
B0
(3)
A0
(2)
B1
(1)
A1
(15)
B2
(14)
A2
(6)
B3
(5)
A3
G9
Z8
G7
Z6
G5
Z4
G3
Z2
Z1
ACTIVE-HIGH INPUTS
(12)
C0
(11)
C1
(9)
C2
(10)
RCOA
(7)
RCOB
1
1
1
1
1,2
3
5
3,4
1,2,4
7
5,6
3,4,6
1,2,4,6
9
7,8
5,6,8
3,4,6,8
1,2,4,6,8
(13)
CE
(4)
B0
(3)
A0
(2)
B1
(1)
A1
(15)
B2
(14)
A2
(6)
B3
(5)
A3
Z9
G8
Z7
G6
Z5
G4
Z3
G2
Z1
ACTIVE-LOW INPUTS
1,4,6,8
INPUTS
OUTPUT
A0
B0
CE
C0
H
H
X
H
H
X
H
H
L
X
X
L
X
L
L
L
INPUTS
OUTPUT
A1
A0
B1
B0
CE
C1
H
X
H
X
X
H
H
H
X
H
X
H
H
H
X
X
H
H
L
X
X
X
X
L
X
L
L
X
X
L
X
X
L
L
L
L
INPUTS
OUTPUT
B3
B2
B1
B0
CE
RCOB
H
X
X
X
X
H
X
H
X
X
X
H
X
X
H
X
X
H
X
X
X
H
X
H
X
X
X
X
H
H
L
L
L
L
L
L
INPUTS
OUTPUT
A2
A1
A0
B2
B1
B0
CE
C2
H
X
X
H
X
X
X
H
H
H
X
X
H
X
X
H
H
H
H
X
X
H
X
H
H
H
H
X
X
X
H
H
L
X
X
X
X
X
X
L
X
L
X
L
X
X
X
L
X
X
L
L
L
X
X
L
X
X
X
L
L
L
L
L
INPUTS
OUTPUT
A3
A2
A1
A0
B3
B2
B1
CE
RCOA
H
X
X
X
H
X
X
X
H
H
H
X
X
X
H
X
X
H
H
H
H
X
X
X
H
X
H
H
H
H
H
X
X
X
H
H
L
X
X
X
X
X
X
X
L
X
L
X
X
L
X
X
X
L
X
X
L
X
L
L
X
X
L
X
X
X
L
L
L
L
X
L
X
X
X
X
L
L
L
L
L
185
RadHard MSI Logic
UT54ACS264/UT54ACTS264
LOGIC DIAGRAM
(10)
RCOA
RCOB
(7)
(9)
C2
(11)
C1
(12)
C0
(13)
(6)
(5)
(15)
(14)
(2)
(1)
(4)
(3)
CE
B3
A3
A2
B1
A1
B0
A0
B2
RadHard MSI Logic 186
UT54ACS264/UT54ACTS264
RADIATION HARDNESS SPECIFICATIONS
1
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER
LIMIT
UNITS
Total Dose
1.0E6
rads(Si)
SEU Threshold
2
80
MeV-cm
2
/mg
SEL Threshold
120
MeV-cm
2
/mg
Neutron Fluence
1.0E14
n/cm
2
SYMBOL
PARAMETER
LIMIT
UNITS
V
DD
Supply voltage
-0.3 to 7.0
V
V
I/O
Voltage any pin
-.3 to V
DD
+.3
V
T
STG
Storage Temperature range
-65 to +150
C
T
J
Maximum junction temperature
+175
C
T
LS
Lead temperature (soldering 5 seconds)
+300
C
JC
Thermal resistance junction to case
20
C/W
I
I
DC input current
10
mA
P
D
Maximum power dissipation
1
W
SYMBOL
PARAMETER
LIMIT
UNITS
V
DD
Supply voltage
4.5 to 5.5
V
V
IN
Input voltage any pin
0 to V
DD
V
T
C
Temperature range
-55 to + 125
C
187
RadHard MSI Logic
UT54ACS264/UT54ACTS264
DC ELECTRICAL CHARACTERISTICS
7
(V
DD
= 5.0V 10%; V
SS
= 0V
6
, -55 C < T
C
< +125 C)
SYMBOL
PARAMETER
CONDITION
MIN
MAX
UNIT
V
IL
Low-level input voltage
1
ACTS
ACS
0.8
.3V
DD
V
V
IH
High-level input voltage
1
ACTS
ACS
.5V
DD
.7V
DD
V
I
IN
Input leakage current
ACTS/ACS
V
IN
= V
DD
or V
SS
-1
1
A
V
OL
Low-level output voltage
3
ACTS
ACS
I
OL
= 8mA
I
OL
= 100 A
0.40
0.25
V
V
OH
High-level output voltage
3
ACTS
ACS
I
OH
= -8mA
I
OH
= -100 A
.7V
DD
V
DD
- 0.25
V
I
OS
Short-circuit output current
2 ,4
ACTS/ACS
V
O
= V
DD
and V
SS
-200
200
mA
I
OL
Output current
10
(Sink)
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
8
mA
I
OH
Output current
10
(Source)
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
-8
mA
P
total
Power dissipation
2, 8, 9
C
L
= 50pF
2.2
mW/
MHz
I
DDQ
Quiescent Supply Current
V
DD
= 5.5V
10
A
I
DDQ
Quiescent Supply Current Delta
ACTS
For input under test
V
IN
= V
DD
- 2.1V
For all other inputs
V
IN
= V
DD
or V
SS
V
DD
= 5.5V
1.6
mA
C
IN
Input capacitance
5
= 1MHz @ 0V
15
pF
C
OUT
Output capacitance
5
= 1MHz @ 0V
15
pF
RadHard MSI Logic 188
UT54ACS264/UT54ACTS264
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%,
- 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but
are guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed
3,765 pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose 1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
AC ELECTRICAL CHARACTERISTICS
2
(V
DD
= 5.0V 10%; V
SS
= 0V
1
, -55 C < T
C
< +125 C)
Notes:
1. Maximum allowable relative shift equals 50mV.
2. All specifications valid for radiation dose 1E6 rads(Si).
SYMBOL
PARAMETER
MINIMUM
MAXIMUM
UNIT
t
PLH
CE to C0, C1, C2
1
17
ns
t
PHL
CE to C0, C1, C2
1
16
ns
t
PLH
An or Bn to C0, C1, C2
1
15
ns
t
PHL
An or Bn to C0, C1, C2
1
17
ns
t
PLH
An, Bn or CE to RCOA
1
15
ns
t
PHL
An, Bn or CE to RCOA
1
15
ns
t
PLH
Bn or CE to RCOB
1
12
ns
t
PHL
Bn or CE to RCOB
1
15
ns