159
RadHard MSI Logic
UT54ACS244/UT54ACTS244
Radiation-Hardened
Octal Buffers & Line Drivers, Three-State Outputs
FEATURES
Three-state outputs drive bus lines or buffer memory address
registers
radiation-hardened CMOS
- Latchup immune
High speed
Low power consumption
Single 5 volt supply
Available QML Q or V processes
Flexible package
- 20-pin DIP
- 20-lead flatpack
DESCRIPTION
The UT54ACS244 and the UT54ACTS244 are non-inverting
octal buffer and line drivers which improve the performance and
density of three-state memory address drivers, clock drivers,
and bus-oriented receivers and transmitters.
The devices are characterized over full military temperature
range of -55 C to +125 C.
FUNCTION TABLE
LOGIC SYMBOL
PINOUTS
20-Pin DIP
Top View
20-Lead Flatpack
Top View
INPUTS
OUTPUT
1G, 2G
A
Y
L
L
L
L
H
H
H
X
Z
(1)
1G
EN
(2)
1A1
(4)
1A2
(6)
1A3
(8)
1A4
(18)
1Y1
(12)
1Y4
(14)
1Y3
(16)
1Y2
(19)
2G
EN
(11)
2A1
(13)
2A2
(15)
2A3
(17)
2A4
(9)
2Y1
(3)
2Y4
(5)
2Y3
(7)
2Y2
Note:
1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC
Publication 617-12.
1G
1A1
2Y4
1A2
2Y3
1A3
2Y2
V
DD
2G
1Y1
2A4
1Y2
1Y3
1A4
2A2
2A3
2Y1
1Y4
V
SS
2A1
1
20
2
19
3
18
4
17
5
16
6
15
7
14
8
13
9
12
10
11
1G
1A1
2Y4
1A2
2Y3
1A3
2Y2
V
DD
2G
1Y1
2A4
1Y2
1Y3
1A4
2A2
2A3
2Y1
1Y4
V
SS
2A1
1
20
2
19
3
18
4
17
5
16
6
15
7
14
8
13
9
12
10
11
RadHard MSI Logic 160
UT54ACS244/UT54ACTS244
LOGIC DIAGRAM
RADIATION HARDNESS SPECIFICATIONS
1
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
PARAMETER
LIMIT
UNITS
Total Dose
1.0E6
rads(Si)
SEU Threshold
2
80
MeV-cm
2
/mg
SEL Threshold
120
MeV-cm
2
/mg
Neutron Fluence
1.0E14
n/cm
2
1A1
1A2
1A3
1A4
1G
(2)
(4)
(6)
(8)
(1)
(16)
(14)
(12)
(18)
1Y1
1Y2
1Y3
1Y4
2A1
2A2
2A3
2A4
2G
(11)
(13)
(15)
(17)
(19)
(7)
(5)
(3)
(9)
2Y1
2Y2
2Y3
2Y4
SYMBOL
PARAMETER
LIMIT
UNITS
V
DD
Supply voltage
-0.3 to 7.0
V
V
I/O
Voltage any pin
-.3 to V
DD
+.3
V
T
STG
Storage Temperature range
-65 to +150
C
T
J
Maximum junction temperature
+175
C
T
LS
Lead temperature (soldering 5 seconds)
+300
C
JC
Thermal resistance junction to case
20
C/W
I
I
DC input current
10
mA
P
D
Maximum power dissipation
1
W
161
RadHard MSI Logic
UT54ACS244/UT54ACTS244
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMIT
UNITS
V
DD
Supply voltage
4.5 to 5.5
V
V
IN
Input voltage any pin
0 to V
DD
V
T
C
Temperature range
-55 to + 125
C
RadHard MSI Logic 162
UT54ACS244/UT54ACTS244
DC ELECTRICAL CHARACTERISTICS
7
(V
DD
= 5.0V 10%; V
SS
= 0V
6
, -55 C < T
C
< +125 C)
SYMBOL
PARAMETER
CONDITION
MIN
MAX
UNIT
V
IL
Low-level input voltage
1
ACTS
ACS
0.8
.3V
DD
V
V
IH
High-level input voltage
1
ACTS
ACS
.5V
DD
.7V
DD
V
I
IN
Input leakage current
ACTS/ACS
V
IN
= V
DD
or V
SS
-1
1
A
V
OL
Low-level output voltage
3
ACTS
ACS
I
OL
= 12.0mA
I
OL
= 100 A
0.40
0.25
V
V
OH
High-level output voltage
3
ACTS
ACS
I
OH
= -12.0mA
I
OH
= -100 A
.7V
DD
V
DD
- 0.25
V
I
OL
Output current
10
(Sink)
V
IN
= V
DD
or V
SS
V
OL
= 0.4V
12
mA
I
OH
Output current
10
(Source)
V
IN
= V
DD
or V
SS
V
OH
= V
DD
- 0.4V
-12
mA
I
OZ
Three-state output leakage current
V
O
= V
DD
and V
SS
-30
30
A
I
OS
Short-circuit output current
2 ,4
ACTS/ACS
V
O
= V
DD
and V
SS
-300
300
mA
P
total
Power dissipation
2,8,9
C
L
= 50pF
2.0
mW/
MHz
I
DDQ
Quiescent Supply Current
V
DD
= 5.5V
10
A
I
DDQ
Quiescent Supply Current Delta
ACTS
For input under test
V
IN
= V
DD
- 2.1V
For all other inputs
V
IN
= V
DD
or V
SS
V
DD
= 5.5V
1.6
mA
C
IN
Input capacitance
5
= 1MHz @ 0V
15
pF
C
OUT
Output capacitance
5
= 1MHz @ 0V
15
pF
163
RadHard MSI Logic
UT54ACS244/UT54ACTS244
Notes:
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: V
IH
= V
IH
(min) + 20%, - 0%; V
IL
= V
IL
(max) + 0%,
- 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but
are guaranteed to V
IH
(min) and V
IL
(max).
2. Supplied as a design limit but not guaranteed or tested.
3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm
2
, the maximum product of load capacitance (per output buffer) times frequency should not exceed
3,765 pF/MHz.
4. Not more than one output may be shorted at a time for maximum duration of one second.
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and V
SS
at frequency of 1MHz and a signal amplitude of 50mV rms maximum.
6. Maximum allowable relative shift equals 50mV.
7. All specifications valid for radiation dose 1E6 rads(Si).
8. Power does not include power contribution of any TTL output sink current.
9. Power dissipation specified per switching output.
10. This value is guaranteed based on characterization data, but not tested.
RadHard MSI Logic 164
UT54ACS244/UT54ACTS244
AC ELECTRICAL CHARACTERISTICS
2
(V
DD
= 5.0V 10%; V
SS
= 0V
1
, -55 C < T
C
< +125 C)
Notes:
1. Maximum allowable relative shift equals 50mV.
2. All specifications valid for radiation dose 1E6 rads(Si).
SYMBOL
PARAMETER
MINIMUM
MAXIMUM
UNIT
t
PLH
Input to Yn
1
11
ns
t
PHL
Input to Yn
1
11
ns
t
PZL
G low to Yn active
2
12
ns
t
PZH
G low to Yn active
2
12
ns
t
PLZ
G high to Yn three-state
2
12
ns
t
PHZ
G high to Yn three-state
2
12
ns