FEATURES
q 25ns maximum (5 volt supply) address access time
q Asynchronous operation for compatible with industry
standard 512K x 8 SRAMs
q TTL compatible inputs and output levels , three-state
bidirectional data bus
q Typical radiation performance
- Total dose: 50krads
- SEL Immune >80 MeV-cm
2
/mg
- LET
TH
(0.25) = >10 MeV-cm
2
/mg
- Saturated Cross Section (cm
2
) per bit, 5.0E -9
- <1E-8 errors/bit-day, Adams 90% geosynchronous
heavy ion
q Packaging options:
- 68-lead dual cavity ceramic quad flatpack (CQFP) -
(weight 7.37 grams)
q Standard Microcircuit Drawing 5962-01511
- QML T and Q compliant part
INTRODUCTION
The QCOTS
TM
UT9Q512K32 Quantified Commercial
Off-the-Shelf product is a high-performance 2M byte
(16Mbit) CMOS static RAM multi-chip module (MCM),
organized as four individual 524,288 x 8 bit SRAMs with a
common output enable. Memory expansion is provided by
an active LOW chip enable (En), an active LOW output
enable (G), and three-state drivers. This device has a power-
down feature that reduces power consumption by more than
90% when deselected.
Writing to each memory is accomplished by taking chip
enable (En) input LOW and write enable ( Wn) inputs LOW.
Data on the eight I/O pins (DQ
0
through DQ
7
) is then written
into the location specified on the address pins (A
0
through
A
18
). Reading from the device is accomplished by taking
chip enable (En) and output enable ( G) LOW while forcing
write enable (Wn) HIGH. Under these conditions, the
contents of the memory location specified by the address
pins will appear on the I/O pins.
The input/output pins are placed in a high impedance state
when the device is deselected (En HIGH), the outputs are
disabled (G HIGH), or during a write operation (En LOW
and Wn LOW). Perform 8, 16, 24 or 32 bit accesses by
making Wn along with En a common input to any
combination of the discrete memory die.
Figure 1. UT9Q512K32 SRAM Block Diagram
512K x 8
512K x 8
512K x 8
512K x 8
DQ(31:24)
or
DQ3(7:0)
DQ(23:16)
or
DQ2(7:0)
DQ(15:8)
or
DQ1(7:0)
DQ(7:0)
or
DQ0(7:0)
G
A(18:0)
W3
E3
E2
E1
E0
W2
W1
W0
Standard Products
QCOTS
TM
UT9Q512K32 16Megabit SRAM MCM
Data Sheet
June, 2003
2
PIN NAMES
DEVICE OPERATION
The UT9Q512 has three control inputs called Enable 1 (En),
Write Enable (Wn), and Output Enable (G); 19 address inputs,
A(18:0); and eight bidirectional data lines, DQ(7:0). En Device
Enable controls device selection, active, and standby modes.
Asserting En enables the device, causes I
DD
to rise to its active
value, and decodes the 19 address inputs to select one of 524,288
words in the memory. Wn controls read and write operations.
During a read cycle, G must be asserted to enable the outputs.
Table 1. Device Operation Truth Table
Notes:
1. “X” is defined as a “don’t care” condition.
2. Device active; outputs disabled.
READ CYCLE
A combination of Wn greater than V
IH
(min) and En less than
V
IL
(max) defines a read cycle. Read access time is measured
from the latter of Device Enable, Output Enable, or valid address
to valid data output.
SRAM Read Cycle 1, the Address Access in figure 3a, is
initiated by a change in address inputs while the chip is enabled
with G asserted and Wn deasserted. Valid data appears on data
outputs DQ(7:0) after the specified t
AVQV
is satisfied. Outputs
remain active throughout the entire cycle. As long as Device
Enable and Output Enable are active, the address inputs may
change at a rate equal to the minimum read cycle time (t
AVAV
).
SRAM read Cycle 2, the Chip Enable - Controlled Access in
figure 3b, is initiated by En going active while G remains
asserted, Wn remains deasserted, and the addresses remain
stable for the entire cycle. After the specified t
ETQV
is satisfied,
the eight-bit word addressed by A(18:0) is accessed and appears
at the data outputs DQ(7:0).
SRAM read Cycle 3, the Output Enable - Controlled Access in
figure 3c, is initiated by G going active while En is asserted, Wn
is deasserted, and the addresses are stable. Read access time is
t
GLQV
unless t
AVQV
or t
ETQV
have not been satisfied.
A(18:0)
Address
Wn
Write Enable
DQn(7:0)
Data Input/Output
G
Output Enable
En
Enable
V
DD
Power
V
SS
Ground
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
Top View
DQ0(0)
DQ1(0)
DQ2(0)
DQ3(0)
DQ4(0)
DQ5(0)
DQ6(0)
DQ7(0)
V
SS
DQ0(1)
DQ1(1)
DQ2(1)
DQ3(1)
DQ4(1)
DQ5(1)
DQ6(1)
DQ7(1)
DQ0(2)
DQ1(2)
DQ2(2)
DQ3(2)
DQ4(2)
DQ5(2)
DQ6(2)
DQ7(2)
V
SS
DQ0(3)
DQ1(3)
DQ2(3)
DQ3(3)
DQ4(3)
DQ5(3)
DQ6(3)
DQ7(3)
N
C
A
0
A
1
A
2
A
3
A
4
A
5
E
2
V
SS
E
3
W
0
A
6
A
7
A
8
A
9
A
10
V
D
D
V
D
D
A
11
A
12
A
13
A
14
A
15
A
16
E
0
G
E
1
A
17
W
1
W
2
W
3
A
18
N
C
N
C
Figure 2. 25ns SRAM Pinout (68)
G
Wn
En
I/O Mode
Mode
X
1
X
1
3-state
Standby
X
0
0
Data in
Write
1
1
0
3-state
Read
2
0
1
0
Data out
Read
3
WRITE CYCLE
A combination of Wn less than V
IL
(max) and En less than
V
IL
(max) defines a write cycle. The state of G is a “don’t care”
for a write cycle. The outputs are placed in the high-impedance
state when either G is greater than V
IH
(min), or when Wn is less
than V
IL
(max).
Write Cycle 1, the Write Enable-controlled Access is defined
by a write terminated by Wn going high, with En still active.
The write pulse width is defined by t
WLWH
when the write is
initiated by Wn, and by t
ETWH
when the write is initiated by En.
Unless the outputs have been previously placed in the high-
impedance state by G, the user must wait t
WLQZ
before applying
data to the nine bidirectional pins DQ(7:0) to avoid bus
contention.
Write Cycle 2, the Chip Enable-controlled Access is defined by
a write terminated by the latter of En going inactive. The write
pulse width is defined by t
WLEF
when the write is initiated by
Wn, and by t
ETEF
when the write is initiated by the En going
active. For the Wn initiated write, unless the outputs have been
previously placed in the high-impedance state by G, the user
must wait t
WLQZ
before applying data to the eight bidirectional
pins DQ(7:0) to avoid bus contention.
TYPICAL RADIATION HARDNESS
The UT9Q512K32 SRAM incorporates features which allows
operation in a limited radiation environment.
Table 2. Radiation Hardness
Design Specifications
1
Notes:
1. The SRAM will not latchup during radiation exposure under recommended
operating conditions.
2. 90% worst case particle environment, Geosynchronous orbit, 100 mils of
Aluminum.
Total Dose
50
krad(Si)
Heavy Ion
Error Rate
2
<1E-8
Errors/Bit-Day
4
ABSOLUTE MAXIMUM RATINGS
1
(Referenced to V
SS
)
Notes:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability and performance.
2. Maximum junction temperature may be increased to +175
°
C during burn-in and steady-static life.
3. Test per MIL-STD-883, Method 1012.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMITS
V
DD
DC supply voltage
-0.5 to 7.0V
V
I/O
Voltage on any pin
-0.5 to 7.0V
T
STG
Storage temperature
-65 to +150
°
C
P
D
Maximum power dissipation
1.0W (per byte)
T
J
Maximum junction temperature
2
+150
°
C
Θ
JC
Thermal resistance, junction-to-case
3
10
°
C/W
I
I
DC input current
±
10 mA
SYMBOL
PARAMETER
LIMITS
V
DD
Positive supply voltage
4.5 to 5.5V
T
C
Case temperature range
-40 to +125
°
C
V
IN
DC input voltage
0V to V
DD
5
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(-40
°
C to +125
°
C) (V
DD
= 5.0V + 10%)
Notes:
* Post-radiation performance guaranteed at 25
°
C per MIL-STD-883 Method 1019 .
1. Measured only for initial qualification and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
SYMBOL
PARAMETER
CONDITION
MIN
MAX
UNIT
V
IH
High-level input voltage
2.0
V
V
IL
Low-level input voltage
0.8
V
V
OL1
Low-level output voltage
I
OL
= 8mA, V
DD
=4.5V
0.4
V
V
OL2
Low-level output voltage
I
OL
= 200
µ
A,V
DD
=4.5V
0.08
V
V
OH1
High-level output voltage
I
OH
= -4mA,V
DD
=4.5V
2.4
V
V
OH2
High-level output voltage
I
OH
= 200
µ
A,V
DD
=4.5V
3.0
V
C
IN
1
Input capacitance
ƒ
= 1MHz @ 0V
32
pF
C
IO
1
Bidirectional I/O capacitance
ƒ
= 1MHz @ 0V
16
pF
I
IN
Input leakage current
V
IN
= V
DD
and V
SS,
V
DD
= V
DD
(max)
-2
2
µ
A
I
OZ
Three-state output leakage current
V
O
= V
DD
and V
SS
V
DD
= V
DD
(max)
G = V
DD
(max)
-2
2
µ
A
I
OS
2, 3
Short-circuit output current
V
DD
= V
DD
(max), V
O
= V
DD
V
DD
= V
DD
(max), V
O
= 0V
-90
90
mA
I
DD
(OP)
Supply current operating
@ 1MHz
(per byte)
Inputs: V
IL
= 0.8V,
V
IH
= 2.0V
I
OUT
= 0mA
V
DD
= V
DD
(max)
125
mA
I
DD1
(OP)
Supply current operating
@40MHz
(per byte)
Inputs: V
IL
= 0.8V,
V
IH
= 2.0V
I
OUT
= 0mA
V
DD
= V
DD
(max)
180
mA
I
DD2
(SB)
Supply current standby
@0MHz
(per byte)
Inputs: V
IL
= V
SS
I
OUT
= 0mA
E1 = V
DD
- 0.5,
V
DD
= V
DD
(max)
V
IH
= V
DD
- 0.5V
6
12
mA
mA
-40
°
C and
25
°
C
125
°
C
6
AC CHARACTERISTICS READ CYCLE (Pre/Post-Radiation)*
(-40
°
C to +125
°
C) (V
DD
= 5.0V + 10%)
Notes: * Post-radiation performance guaranteed at 25
°
C per MIL-STD-883 Method 1019.
1. Functional test.
2. Three-state is defined as a 500mV change from steady-state output voltage.
3. The ET (enable true) notation refers to the falling edge of En. SEU immunity does not affect the read parameters.
4. The EF (enable false) notation refers to the rising edge of En. SEU immunity does not affect the read parameters.
SYMBOL
PARAMETER
MIN
MAX
UNIT
t
AVAV
1
Read cycle time
25
ns
t
AVQV
Read access time
25
ns
t
AXQX
2
Output hold time
3
ns
t
GLQX
2
G-controlled Output Enable time
3
ns
t
GLQV
G-controlled Output Enable time (Read Cycle 3)
10
ns
t
GHQZ
2
G-controlled output three-state time
10
ns
t
ETQX
2,3
En-controlled Output Enable time
3
ns
t
ETQV
3
En-controlled access time
25
ns
t
EFQZ
1 ,2 ,4
En-controlled output three-state time
10
ns
{
{
}
}
V
LOAD
+ 500mV
V
LOAD
- 500mV
V
LOAD
V
H
- 500mV
V
L
+ 500mV
Active to High Z Levels
High Z to Active Levels
Figure 3. 5-Volt SRAM Loading
7
Assumptions:
1 . En and G < V
IL
(max) and Wn > V
IH
(min)
A(18:0)
DQn(7:0)
Figure 4a. SRAM Read Cycle 1: Address Access
t
AVAV
t
AVQV
t
AXQX
Previous Valid Data
Valid Data
Assumptions:
1. G < V
IL
(max) and Wn > V
IH
(min)
A(18:0)
Figure 4b. SRAM Read Cycle 2: Chip Enable -Controlled Access
En
DATA VALID
t
EFQZ
t
ETQV
t
ETQX
DQn(7:0)
Figure 4c. SRAM Read Cycle 3: Output Enable-Controlled Access
A(18:0)
DQn(7:0)
G
t
GHQZ
Assumptions:
1 . En < V
IL
(max) and W n > V
IH
(min)
t
GLQV
t
GLQX
t
AVQV
DATA VALID
8
AC CHARACTERISTICS WRITE CYCLE (Pre/Post-Radiation)*
(-40
°
C to +125
°
C) (V
DD
= 5.0V + 10%)
Notes:
* Post-radiation performance guaranteed at 25
°
C per MIL-STD-883 Method 1019.
1. Functional test performed with outputs disabled (G high).
2 . Three-state is defined as 500mV change from steady-state output voltage.
SYMBOL
PARAMETER
MIN
MAX
UNIT
t
AVAV
1
Write cycle time
25
ns
t
ETWH
Device Enable to end of write
20
ns
t
AVET
Address setup time for write (En - controlled)
1
ns
t
AVWL
Address setup time for write (Wn - controlled)
0
ns
t
WLWH
Write pulse width
20
ns
t
WHAX
Address hold time for write (Wn - controlled)
0
ns
t
EFAX
Address hold time for Device Enable (En - controlled)
0
ns
t
WLQZ
2
Wn - controlled three-state time
10
ns
t
WHQX
2
Wn - controlled Output Enable time
5
ns
t
ETEF
Device Enable pulse width (En - controlled)
20
ns
t
DVWH
Data setup time
15
ns
t
WHDX
Data hold time
0
ns
t
WLEF
Device Enable controlled write pulse width
20
ns
t
DVEF
Data setup time
15
ns
t
EFDX
Data hold time
0
ns
t
AVWH
Address valid to end of write
20
ns
t
WHWL
1
Write disable time
5
ns
9
Assumptions:
1. G < V
IL
(max). If G > V
IH
(min) then Qn(7:0) will be
in three-state for the entire cycle.
2. G high for t
AVAV
cycle.
Wn
t
AVWL
Figure 5a. SRAM Write Cycle 1: Write Enable - Controlled Access
A(18:0)
Qn(7:0)
En
t
AVAV
2
Dn(7:0)
APPLIED DATA
t
DVWH
t
WHDX
t
ETWH
t
WLWH
t
WHAX
t
WHQX
t
WLQZ
t
AVWH
t
WHWL
10
t
EFDX
Assumptions & Notes:
1. G < V
IL
(max). If G > V
IH
(min) then Q n(7:0) will be in three-state for the entire cycle.
2. Either En scenario above can occur.
3. G high for t
AVAV
cycle.
A(18:0)
Figure 5b. SRAM Write Cycle 2: Chip Enable - Controlled Access
Wn
En
Dn(7:0)
APPLIED DATA
En
Qn(7:0)
t
WLQZ
t
ETEF
t
WLEF
t
DVEF
t
AVAV
3
t
AVET
t
AVET
t
ETEF
t
EFAX
t
EFAX
or
Notes:
1. 50pF including scope probe and test socket capacitance.
2. Measurement of data output occurs at the low to high or high to low transition mid-point
(i.e., CMOS input = V
DD
/2).
90%
Figure 6. AC Test Loads and Input Waveforms
Input Pulses
10%
< 5ns
< 5ns
V
LOAD
= 1.55V
300 ohms
50pF
CMOS
0.5V
V
DD
-0.05V
10%
11
DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)
(1 Second Data retention Test)
Notes:
1. En =
V
DD
- .2V, all other inputs = V
DR
or V
SS
.
2. Data retention current (I
D D R
) Tc = 25
o
C.
3. Not guaranteed or tested.
4. V
DR
= T=-40
o
C and 125
o
C.
DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)
(10 Second Data Retention Test, T
C
=-40
o
C and +125
o
C)
Notes:
1. Performed at V
DD
(min) and V
DD
(max).
2. En =
V
SS
, all other inputs = V
DR
or V
SS
.
3. Not guaranteed or tested.
SYMBOL
PARAMETER
MINIMUM
MAXIMUM
UNIT
V
DR
V
DD
for data retention
2.5
--
V
I
DDR
1,2
Data retention current (per byte)
--
5.0
mA
t
EFR
1,3
Chip deselect to data retention time
0
ns
t
R
1,3
Operation recovery time
t
AVAV
Ns
SYMBOL
PARAMETER
MINIMUM
MAXIMUM
UNIT
V
DD
1
V
DD
for data retention
4.5
5.5
V
t
EFR
2, 3
Chip select to data retention time
0
ns
t
R
2, 3
Operation recovery time
t
AVAV
ns
V
DD
DATA RETENTION MODE
t
R
4.5V
4. 5V
V
DR
>
2.5V
Figure 7. Low V
DD
Data Retention Waveform
t