GM76C8128CL/CLL
131,072 WORDS x 8 BIT
CMOS STATIC RAM
Description
Features
* Fast Speed : 55/70/85ns
* Low Power Standby and Low Power Operation
Standby : 0.275mW Max. at T
A
= - 40 ~ 85C(LLE/LLI)
0.55mW Max. at T
A
= - 40 ~ 85C(LE/LI)
0.11mW Max. at T
A
= 0 ~ 70C(LL)
0.55mW Max. at T
A
= 0 ~ 70C(L)
Operation : 385mW (Max)
* Completely Static RAM : No Clock or Timing
Strobe Required
* Equal Access and Cycle Time
* TTL compatible inputs and outputs
* Capability of Battery Back-up Operation
* Single + 5V+/-10% Operation
* Standard 32 DIP, SOP and TSOP-I,STSOP-I
* Temperature Range
Commercial(0
¡-
70C) : GM76C8128C
Extended (-25 ~ 85C) : GM76C8128C-E
Industrial (-40 ~ 85C) : GM76C8128C-I
The GM76C8128CL/CLL is a 1,048,576 bits static
random access memory organized as 131,072 words
by 8 bits. Using a 0.6
um advanced CMOS technology
and it provides high speed operation with minimum
cycle time of 55/70/85ns. The device is placed in a
low power standby mode with /CS1 high or CS2 low
and the output enable (/OE) allows fast memory
access. Thus it is suitable for high speed and low
power applications, especially where battery back-up
is required.
85
Pin Description
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
Pin
Function
A0-A16
Address Inputs
I/O0-I/O7
V
CC
V
SS
Write Enable Input
Chip Select Input
Output Enable Input
Data Inputs/Outputs
Power Supply (4.5V ~5.5V)
Ground
NC
No Connection
/WE
/CS1, CS2
/OE
Pin Configuration
(Top View)
A7
A6
A5
A4
A3
A2
A1
A0
V
CC
A15
CS2
/WE
A13
A8
A9
A11
/OE
A10
/CS1
I/O7
1
2
3
4
5
6
7
8
9
10
11
12
21
22
23
24
25
26
27
28
29
30
31
32
I/O0
I/O1
I/O6
I/O5
13
14
19
20
I/O2
V
SS
I/O4
I/O3
15
16
17
18
NC
A16
A14
A12
Block Diagram
MEMORY CELL ARRAY
1024 x 128 x 8
(128K x 8)
Column Select
I/O Buffer
Address
Buffer
X
Decoder
10
1024
7
128
128 x 8
8
Y
Decorder
/CS1, CS2
A0
A1
A2
A14
A15
A16
/CS1
/OE
. . . . . . . .
Chip
Control
/OE, /WE
Chip
Control
/WE
CS2
LG Semicon Co.,Ltd.
GM76C8128CL/CLL
86
Absolute Maximum Ratings*
*: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indi-
cated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
Recommended DC Operating Conditions (T
A
= - 40 ~ 85C)
Truth Table
*Note: X means don't care
/CS1
L
L
L
CS2
H
H
H
/OE
L
X
H
A0 to A16
Stable
Stable
Stable
DATA I/O
Output Data
Input Data
Hi-Z
MODE
Read
Write
Output Disable
H
X
X
-
Hi-Z
Standby
X
L
X
-
Hi-Z
/WE
H
L
H
X
X
Symbol
Parameter
Unit
V
CC
V
IH
V
IL
Supply Voltage
Input High Voltage
Input Low Voltage
V
V
V
Max
5.5
V
CC
+ 0.3
0.8
Typ
5.0
-
-
Min
4.5
2.2
-0.3*
*Note :V
IL
(min) = -3.0V for <= 10ns pulse
Symbol
Parameter
Rating
Unit
T
A
T
STG
T
SOL
-25 ~ 85
-55 ~ 150
260, 10 (at lead)
Ambient Temperature under Bias
Storage Temperature
Soldering Temperature and Time
C
C
C, S
V
CC
-0.3 ~ 7.0
Supply Voltage
V
V
IN
V
I/O
-0.5 ~ V
CC
+ 0.5
Input Voltage
Input and Output Voltage
V
V
P
D
1.0
Power Dissipation
W
C
C
-40 ~ 85
0 ~ 70
GM76C8128C-E
GM76C8128C-I
GM76C8128C
Capacitance (f = 1MH
Z
, T
A
= 25C)
Symbol
Parameter
Unit
C
IN
C
I/O
Input Capacitance
Output Capacitance
pF
pF
Max
6
8
Min
Test Conditions
V
I
= 0V
V
O
= 0V
-
-
*Note: This parameter is sampled and not 100% tested.
-0.3 ~ 7.0
GM76C8128CL/CLL
87
DC Operating Characteristics (V
CC
= 5V+/-10%, T
A
= - 40 ~ 85C)
*Typ. Values are measured at 25C
Symbol
Parameter
I
I(L)
Input Leakage Current
I
O(L)
Output Leakage Current
V
OH
High Level Output Voltage
V
OL
Low Level Output Voltage
I
CC
Operating Supply Current
I
CC1
Average Operating Current
I
CC2
I
CCS1
I
CCS2
Standby Current(TTL)
Conditions
V
IN
= 0 to V
CC
/CS1 = V
IH
or CS2 = V
IL
/OE = V
IH
, V
SS
<=V
OUT
<=V
CC
I
OH
= -1.0mA
I
OL
= 2.1mA
/CS1 = V
IL
and CS2 = V
IH
V
IN
= V
IH
/V
IL,
I
OUT
= 0mA
/CS1 = V
IL
and CS2 = V
IH
V
IN
= V
IH
/V
IL
I
OUT
= 0mA
t
cycle = Min, cycle
/CS1 = 0.2V, CS2 = V
CC
-0.2V
V
IN
= V
CC
- 0.2V/0.2V
I
OUT
= 0mA
t
cycle = 1
us
/CS1 = V
IH
, CS2 = V
IL
/CS1 = V
CC
-0.2V
CS2 = 0.2V
Unit
uA
uA
V
V
mA
mA
mA
mA
Max
1
1
-
0.4
15
70
10
2
*Typ
-
-
-
-
-
Min
-1
-1
2.4
-
-
-
-
-
uA
uA
100
50
-
-
-
-
-
-
-
-
-
GM76C8128C-E
GM76C8128C-I
GM76C8128C
Standby
Current(CMOS)
100
20
-
-
L - Version
LL - Version
L - Version
LL - Version
Test Conditions (V
CC
= 5V+/-10%, T
A
= - 40 ~ 85C, unless otherwise noted.)
AC Operating Characteristics
Parameter
Input Pulse Level
Input Rise and Fall Time
Value
0.6V to 2.4V
5ns
Input and Output Timing Reference Levels
1.5V
Output Load
See below
Output Load (A)
Output Load (B)
(for tCHZ, tCLZ, tWHZ, tOW, tOLZ & tOHZ)
+5V
D
OUT
1.8K§Ù
990§Ù
5 §Ü*
+5V
D
OUT
1.8K§Ù
990§Ù
100 §Ü*
GM76C8128CL/CLL
88
AC Operating Characteristics (V
CC
= 5V+/-10%, T
A
= - 40 ~ 85C)
Symbol
Parameter
Unit
t
RC
Read Cycle Time
t
AA
Address Access Time
t
ACS1
Chip Select 1 Access Time
t
ACS2
Chip Select 2 Access Time
t
OE
Output Enable Access Time
t
CLZ1
Chip Select 1 Output Setup Time
t
CHZ1
Chip Select 1 Output Floating
t
CLZ2
Chip Select 2 Output Setup Time
t
CHZ2
Chip Select 2 Output Floating
t
OLZ
Output Enable Output Setup Time
t
OHZ
Output Enable Output Floating
t
OH
Output Hold Time
Max
Min
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-
85
85
85
45
-
30
-
30
-
30
-
85
-
-
-
-
10
-
10
-
0
-
10
-
55
55
55
30
-
20
-
20
-
20
-
55
-
-
-
-
5
-
5
-
0
-
5
Write Cycle
Symbol
Parameter
Unit
t
WC
Write Cycle Time
t
CW1
Chip Select Time 1
t
CW2
Chip Select Time 2
t
AW
Address Enable Time
t
AS
Address Setup Time
t
WP
Write Pulse Width
t
WR
Address Hold Time
t
DW
Input Data Setup Time
t
DH
Input Data Hold Time
t
WHZ
Write to Output in High-Z
t
OW
Output Active from End of Write
Max
Min
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-
85
-
55
-
50
50
50
0
0
0
0
45
25
20
-
-
-
-
-
-
-
-
-
-
75
75
70
0
0
0
0
60
35
30
-
-
-
-
-
-
-
-
-
Read Cycle
Max
Min
Max
Min
Max
Min
Max
Min
-
70
70
70
35
-
25
-
25
-
25
-
70
-
-
-
-
5
-
5
-
0
-
10
-
70
-
65
65
60
0
0
0
0
50
30
25
-
-
-
-
-
-
-
-
-
GM76C8128C-55 GM76C8128C-70 GM76C8128C-85
GM76C8128C-55 GM76C8128C-70 GM76C8128C-85
GM76C8128CL/CLL
89
Timing Waveforms
/CS1
CS2
t
RC
ADD
t
AA
t
CHZ1
t
OHZ
/OE
t
ACS1
t
CLZ1
t
ACS2
t
CLZ2
t
OE
t
OLZ
t
CHZ2
t
OH
D
OUT
VALID DATA
High-Z
Read Cycle (Note 1)
GM76C8128CL/CLL
Write Cycle (1) (/WE Controlled) (Notes 2, 3, 4)
/CS1
t
WC
D
OUT
ADD
CS2
t
AS
/WE
t
OW
D
IN
VALID DATA
t
AW
t
WR
t
WP
t
CW1
t
CW2
t
WHZ
t
DW
t
DH
90
GM76C8128CL/CLL
Write Cycle (2) (/CS1 Controlled) (Notes 4)
/WE
t
WC
D
OUT
ADD
/CS1
t
AS
D
IN
VALID DATA
t
WR
t
WP
t
CW2
t
DW
t
DH
t
CW1
t
WHZ
t
CLZ
CS2
91
GM76C8128CL/CLL
/WE
t
WC
D
OUT
ADD
CS2
t
AS
Write Cycle (3) (CS2 Controlled) (Notes 4)
D
IN
VALID DATA
t
WR
t
WP
t
DW
t
DH
t
WHZ
t
CLZ
t
CW1
/CS1
Notes:
1. /WE is High for Read Cycle.
2. Assuming that /CS1 Low transition or CS2 High transition occurs coincident with or after /WE Low
transition. Outputs remain in a high impedance state.
3. Assuming that /CS1 High transition or CS2 Low transition occurs coincident with or prior to /WE High
transition. Outputs remain in a high impedance state.
4. Assuming that /OE is high for write cycle. Outputs are in a high impedance state during this period.
t
CW2
92
GM76C8128CL/CLL
* 3
uA max at T
A
= 0 ~ 40C
** tRC = Read Cycle
Notes: In Data Retention Mode, CS2 controls the Address, /WE, /CS1, /OE and D
IN
buffer. If CS2 controls
data retention mode, V
IN
for these inputs can be in the high impedance state. If /CS1 controls the
data retention mode, CS2 must satisfy either CS2 V
CCR
- 0.2V or CS2<=0.2V. The other input levels
(Address, /WE, /OE, I/O) can be in the high impedance state.
>
_
* Low V
CC
Data Retention Mode: (1) /CS1 Controlled
V
CC
Data Retention Mode
t
CDR
t
R
/CS1>= V
CCR
- 0.2V
4.5V
2.2V
V
CCR1
/CS1
0V
* Low V
CC
Data Retention Mode: (2) CS2 Controlled
V
CC
Data Retention Mode
t
CDR
t
R
CS2 <= 0.2V
4.5V
CS2
V
CCR2
0.4V
0V
93
Data Retention Characteristics
Symbol
Parameter
Unit
V
CCR
I
CCR
Data Retention Supply Voltage
Data Retention
Current
uA
Max
Typ
Min
VCC=3.0V
Chip Select to Data Retention Time
L - Version
LL - Version
Operation Recovery Time
t
CDR
t
R
2.0
-
5.5
V
-
-
1
0.5
50
15*
0
t
RC
**
-
-
-
-
ns
ns
L - Version
LL - Version
-
-
-
-
50
25*
GM76C8128C-E
GM76C8128C-I
GM76C8128C
GM76C8128CL/CLL
94
Package Dimensions
Unit: Inches (mm)
32 SOP
0.435(11.05) MIN
0.445(11.30) MAX
0.020(0.50) MAX
0.014(0.35) MIN
TYP
0.050(1.27)
0.010(0.254) MAX
0.004(0.102) MIN
0.010(0.254) MAX
0.004(0.10) MIN
0.55(14.05) MIN
0.57(14.40) MAX
0.04(1.04) MAX
0.02(0.53) MIN
0.090(2.29) MAX
0.086(2.18) MIN
0.799(20.30) MIN
0.815(20.70) MAX
0 ~ 8
32 DIP
0.190(4.83) MAX
0.165(4.191) MIN
TYP
0.100(2.54)
0.020(0.51) MAX
0.016(0.41) MIN
0.540(13.72)
TYP
1.665(42.29) MAX
1.645(41.78) MIN
0.045(1.14) MIN
0.055(1.40) MAX
0.15(3.81)
0.015(0.38)
0.135(3.43) MAX
0.125(3.18) MIN
0.600(15.24) MIN
0.625(15.88) MAX
0.600(15.240)
0 ~ 15
o
0.015(0.380) MAX
0.008(0.200) MIN
TYP
TYP
MIN
GM76C8128CL/CLL
95
0.000(0.00) MAX
0.006(0.15) MIN
0.313(7.95) MIN
0.327(8.30) MAX
0.795(20.20) MAX
0.780(19.80) MIN
0.047(1.2) MAX
0.039(1.0) MIN
0.020(0.50)
0.006(0.15) MIN
0.010(0.25) MAX
32 TSOP I (8x20mm)
0.728(18.50) MAX
0.720(18.30) MIN
0.024(0.60) MAX
0.016(0.40) MIN
TYP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
/WE
CS2
A15
VCC
N.C
A16
A14
A12
A7
A6
A5
A4
/OE
A10
/CS1
I/O7
I/O6
I/O5
I/O4
I/O3
VSS
I/O2
I/O1
I/O0
A0
A1
A2
A3
32Small TSOP-I(8x13.4mm)
0.006(0.15) MAX
0.002(0.05) MIN
0.311(7.95) MIN
0.320(8.2) MAX
0.020(0.5)
0.006(0.15) MIN
0.009(0.25) MAX
TYP
0.467(11.86) MAX
0.461(11.70) MIN
0.044(1.0) MAX
0.035(1.2) MIN
0.019(0.4) MAX
0.020(0.6) MIN
0.528(13.50) MAX
0.527(13.30) MIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
/WE
CS2