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Philips Semiconductors
NE/SE5539
High frequency operational amplifier
Product specification
April 15, 1992
RF COMMUNICATIONS PRODUCTS
IC11
background image
Philips Semiconductors
Product specification
NE/SE5539
High frequency operational amplifier
2
1992 Apr 15
853-0814 06456
DESCRIPTION
The NE/SE5539 is a very wide bandwidth, high slew rate, monolithic
operational amplifier for use in video amplifiers, RF amplifiers, and
extremely high slew rate amplifiers.
Emitter-follower inputs provide a true differential input impedance
device. Proper external compensation will allow design operation
over a wide range of closed-loop gains, both inverting and
non-inverting, to meet specific design requirements.
FEATURES
•
Bandwidth
– Unity gain - 350MHz
– Full power - 48MHz
– GBW - 1.2GHz at 17dB
•
Slew rate: 600/V
µ
s
•
A
VOL
: 52dB typical
•
Low noise - 4nV
√
Hz typical
•
MIL-STD processing available
APPLICATIONS
•
High speed datacom
•
Video monitors & TV
PIN CONFIGURATION
+ INPUT
NC
-VSUPPLY
- INPUT
NC
NC
NC
VOSADJ
/
AV ADJ
GROUND
+V
NC
OUTPUT
D, F, N Packages
NC
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
FREQUENCY
COMPENS.
+
–
SL00570
Figure 1. Pin Configuration
•
Satellite communications
•
Image processing
•
RF instrumentation & oscillators
•
Magnetic storage
•
Military communications
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
14-Pin Plastic Dual In-Line Package (DIP)
0 to +70
°
C
NE5539N
SOT27-1
14-Pin Plastic Small Outline (SO) package
0 to +70
°
C
NE5539D
SOT108-1
14-Pin Ceramic Dual In-Line Package
0 to +70
°
C
NE5539F
0581B
14-Pin Ceramic Dual In-Line Package
-55 to +125
°
C
SE5539F
0581B
ABSOLUTE MAXIMUM RATINGS
1
SYMBOL
PARAMETER
RATING
UNITS
V
CC
Supply voltage
±
12
V
P
DMAX
Maximum power dissipation,
T
A
= 25
°
C (still-air)
2
F package
N package
D package
1.17
1.45
0.99
W
W
W
T
A
Operating temperature range
NE
SE
0 to 70
-55 to +125
°
C
°
C
T
STG
Storage temperature range
-65 to +150
°
C
T
J
Max junction temperature
150
°
C
T
SOLD
Lead soldering temperature (10sec max)
+300
°
C
NOTES:
1. Differential input voltage should not exceed 0.25V to prevent excesive input bias current and common-mode voltage 2.5V. These voltage
limits may be exceeded if current is limited to less than 10mA.
2. Derate above 25
°
C, at the following rates:
F package at 9.3mW/
°
C
N package at 11.6mW/
°
C
D package at 7.9mW/
°
C
background image
Philips Semiconductors
Product specification
NE/SE5539
High frequency operational amplifier
1992 Apr 15
3
EQUIVALENT CIRCUIT
(–) 14
INVERTING INPUT
(+) 1
NON–INVERTING
INPUT
5
(3) –VCC
(7) GRD
(8) OUTPUT
(10) +VCC
(12) FREQUENCY COMP.
2.2k
R18
R19
R3
R5
R2
R6
R8
Q1
Q2
Q4
Q3
Q6
Q5
Q7
Q8
R20
R1
R4
R21
R9
R10
R7
R17
R16
Q9
Q10
R13
R11
R12
R14
R15
Q11
SL00571
Figure 2. Equivalent Circuit
DC ELECTRICAL CHARACTERISTICS
V
CC
=
±
8V, T
A
= 25
°
C; unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SE5539
NE5539
UNITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
V
OS
Input offset voltage
V
O
= 0V R
S
= 100
Ω
Over temp
2
5
mV
V
OS
Input offset voltage
V
O
= 0V, R
S
= 100
Ω
T
A
= 25
°
C
2
3
2.5
5
mV
∆
V
OS
/
∆
T
5
5
µ
V/
°
C
I
OS
Input offset current
Over temp
0.1
3
µ
A
I
OS
Input offset current
T
A
= 25
°
C
0.1
1
2
µ
A
∆
I
OS
/
∆
T
0.5
0.5
nA/
°
C
I
Input bias current
Over temp
6
25
µ
A
I
B
Input bias current
T
A
= 25
°
C
5
13
5
20
µ
A
∆
I
B
/
∆
T
10
10
nA/
°
C
CMRR
Common mode rejection ratio
F = 1kHz, R
S
= 100
Ω
, V
CM
±
1.7V
70
80
70
80
dB
CMRR
Common mode rejection ratio
Over temp
70
80
dB
R
IN
Input impedance
100
100
k
Ω
R
OUT
Output impedance
10
10
Ω
background image
Philips Semiconductors
Product specification
NE/SE5539
High frequency operational amplifier
1992 Apr 15
4
DC ELECTRICAL CHARACTERISTICS (Continued)
V
CC
=
±
8V, T
A
= 25
°
C; unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SE5539
NE5539
UNITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
V
OUT
Output voltage swing
R
L
= 150
Ω
to GND and
470
Ω
to -V
CC
+Swing
-Swing
+2.3
-1.7
+2.7
-2.2
V
V
OUT
Output voltage swing
R
L
= 25
Ω
to GND
Over temp
+Swing
-Swing
+2.3
-1.5
+3.0
-2.1
V
V
OUT
Output voltage swing
R
L
= 25
Ω
to GND
T
A
= 25
°
C
+Swing
-Swing
+2.5
-2.0
+3.1
-2.7
V
I
CC
Positive supply current
V
O
= 0, R
1
=
∞
, Over temp
14
18
mA
I
CC+
Positive supply current
V
O
= 0, R
1
=
∞
, T
A
= 25
°
C
14
17
14
18
mA
I
CC
Negative supply current
V
O
= 0, R
1
=
∞
, Over temp
11
15
mA
I
CC-
Negative supply current
V
O
= 0, R
1
=
∞
, T
A
= 25
°
C
11
14
11
15
mA
PSRR
Power supply rejection ratio
∆
V
CC
=
±
1V, Over temp
300
1000
µ
V/V
PSRR
Power supply rejection ratio
∆
V
CC
=
±
1V, T
A
= 25
°
C
200
1000
µ
V/V
A
VOL
Large signal voltage gain
V
O
= +2.3V, -1.7V, R
L
= 150
Ω
to
GND, 470
Ω
to -V
CC
47
52
57
dB
A
VOL
Large signal voltage gain
V
O
= +2.3V, -1.7V
Over
temp
dB
A
VOL
Large signal voltage gain
R
L
= 2
Ω
to GND
T
A
= 25
°
C
47
52
57
dB
A
VOL
Large signal voltage gain
V
O
= +2.5V, -2.0V
Over
temp
46
60
dB
A
VOL
Large signal voltage gain
R
L
= 2
Ω
to GND
T
A
= 25
°
C
48
53
58
dB
DC ELECTRICAL CHARACTERISTICS
V
CC
=
±
6V, T
A
= 25
°
C; unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SE5539
UNITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
OS
Input offset voltage
Over temp
2
5
mV
V
OS
Input offset voltage
T
A
= 25
°
C
2
3
mV
I
OS
Input offset current
Over temp
0.1
3
µ
A
I
OS
Input offset current
T
A
= 25
°
C
0.1
1
µ
A
I
B
Input bias current
Over temp
5
20
µ
A
I
B
Input bias current
T
A
= 25
°
C
4
10
µ
A
CMRR
Common-mode rejection ratio
V
CM
=
±
1.3V, R
S
= 100
Ω
70
85
dB
I
CC
Positive supply current
Over temp
11
14
mA
I
CC+
Positive supply current
T
A
= 25
°
C
11
13
mA
I
CC
Negative supply current
Over temp
8
11
mA
I
CC-
Negative supply current
T
A
= 25
°
CmA
8
10
mA
PSRR
Power supply rejection ratio
∆
V
CC
=
±
1V
Over temp
300
1000
µ
V/V
PSRR
Power supply rejection ratio
∆
V
CC
=
±
1V
T
A
= 25
°
C
µ
V/V
V
O
l
i
Over
+Swing
+1.4
+2.0
V
V
OUT
Output voltage swing
R
L
= 150
Ω
to GND
temp
–Swing
–1.1
–1.7
V
V
OUT
Output voltage swing
and 390
Ω
to –V
CC
T
A
=
+Swing
+1.5
+2.0
V
25
°
C
–Swing
–1.4
–1.8
background image
Philips Semiconductors
Product specification
NE/SE5539
High frequency operational amplifier
1992 Apr 15
5
AC ELECTRICAL CHARACTERISTICS
V
CC
=
±
8V, R
L
= 150
Ω
to GND and 470
Ω
to -V
CC
, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SE5539
NE5539
UNITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
BW
Gain bandwidth product
A
CL
= 7, V
O
= 0.1 V
P-P
1200
1200
MHz
Small signal bandwidth
A
CL
= 2, R
L
= 150
Ω
1
110
110
MHz
t
S
Settling time
A
CL
= 2, R
L
= 150
Ω
1
15
15
ns
SR
Slew rate
A
CL
= 2, R
L
= 150
Ω
1
600
600
V/
µ
s
t
PD
Propagation delay
A
CL
= 2, R
L
= 150
Ω
1
7
7
ns
Full power response
A
CL
= 2, R
L
= 150
Ω
1
48
48
MHz
Full power response
A
V
= 7, R
L
= 150
Ω
1
20
20
MHz
Input noise voltage
R
S
= 50
Ω
, 1MHz
4
4
nV/
√
Hz
Input noise current
1MHz
6
6
pA/
√
Hz
NOTES:
1. External compensation.
AC ELECTRICAL CHARACTERISTICS
V
CC
=
±
6V, R
L
= 150
Ω
to GND and 390
Ω
to -V
CC
, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SE5539
UNITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BW
Gain bandwidth product
A
CL
= 7
700
MHz
BW
Small signal bandwidth
A
CL
= 2
1
120
MHz
t
S
Settling time
A
CL
= 2
1
23
ns
SR
Slew rate
A
CL
= 2
1
330
V/
µ
s
t
PD
Propagation delay
A
CL
= 2
1
4.5
ns
Full power response
A
CL
= 2
1
20
MHz
NOTES:
1. External compensation.
TYPICAL PERFORMANCE CURVES
NE5539 Open-Loop Phase
0
90
180
270
360
1 MHz
10MHz
100MHz
1GHz
FREQUENCY (Hz)
PHASE (DEG)
SL00572
Figure 3. NE5539 Open-Loop Phase
NE5539 Open-Loop Gain
60
50
40
30
20
10
0
1 MHz
10MHz
100MHz
1GHz
FREQUENCY (Hz)
GAIN (dB)
SL00573
Figure 4. NE5539 Open-Loop Gain
background image
Philips Semiconductors
Product specification
NE/SE5539
High frequency operational amplifier
1992 Apr 15
6
TYPICAL PERFORMANCE CURVES
(Continued)
dB BELOW REF
Power Bandwidth (SE)
Power Bandwidth (NE)
SE5539 Open-Loop Gain vs Frequency
Power Bandwidth
SE5539 Open-Loop Phase vs Frequency
Gain Bandwidth Product vs Frequency
5
4
3
2
1
GAIN (—2)
VCC = +8V
RL = 2k
Ω
3dB B.W
1 MHz
10MHz
100MHz
300Mhz
p–p OUTPUT (V)
FREQUENCY (Hz)
3dB B.W.
1 MHz
10MHz
100MHz
300Mhz
FREQUENCY (Hz)
p–p OUTPUT (V)
4
3
2
1
0
VCC = +6V
RL = 150k
Ω
GAIN (—2)
1 MHz
10MHz
100MHz
300Mhz
FREQUENCY (Hz)
VCC = +6V
RL = 126
Ω
0
o
50
40
30
20
10
GAIN (dB)
22
20
18
16
14
12
1MHz
10MHz
100MHz
FREQUENCY (Hz)
GAIN (dB)
3dB BANDWIDTH
3dB BANDWIDTH
AV = X7.5
AV = X10
VCC =
±
6V
RL = 150
Ω
300MHz
1MHz
10MHz
100MHz
FREQUENCY (Hz)
300MHz
GAIN (–7)
RL = 150
Ω
REF
3.04V
P-P
–2
–4
–6
–8
–10
–12
1MHz
10MHz
100MHz
FREQUENCY (Hz)
300MHz
VCC =
±
6V
RL = 126
Ω
PHASE (DEG)
0
°
45
°
90
°
135
°
180
°
NOTE:
Indicates typical
distribution –55
°
C
≤
TA
≤
125
°
C
SL00574
Figure 5. Typical Performance Curves
background image
Philips Semiconductors
Product specification
NE/SE5539
High frequency operational amplifier
1992 Apr 15
7
CIRCUIT LAYOUT CONSIDERATIONS
As may be expected for an ultra-high frequency, wide-gain