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DATA SHEET
Product specification
Supersedes data of 1996 Apr 26
1999 May 25
DISCRETE SEMICONDUCTORS
BZX79 series
Voltage regulator diodes
M3D176
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1999 May 25
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
FEATURES
Total power dissipation:
max. 500 mW
Three tolerance series:
±
1%,
±
2%,
and approx.
±
5%
Working voltage range:
nom. 2.4 to 75 V (E24 range)
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
Low voltage stabilizers or voltage
references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages. The diodes are available in the normalized E24
±
1% (BZX79-A),
±
2% (BZX79-B), and approx
. ±
5% (BZX79-C) tolerance
range. The series consists of 37 types with nominal working voltages from
2.4 to 75 V.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diodes are type branded.
handbook, halfpage
MAM239
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature
50
°
C; max. lead length 8 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
F
continuous forward current
250
mA
I
ZSM
non-repetitive peak reverse current
t
p
= 100
µ
s; square wave;
T
j
= 25
°
C prior to surge
see Tables
1, 2, 3 and 4
P
tot
total power dissipation
T
amb
= 50
°
C; note 1
400
mW
T
amb
= 50
°
C; note 2
500
mW
P
ZSM
non-repetitive peak reverse power
dissipation
t
p
= 100
µ
s; square wave;
T
j
= 25
°
C prior to surge; see Fig.3
40
W
T
stg
storage temperature
65
+200
°
C
T
j
junction temperature
65
+200
°
C
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1999 May 25
3
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
ELECTRICAL CHARACTERISTICS
Total BZX79-A, B and C series
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 10 mA; see Fig.4
0.9
V
I
R
reverse current
BZX79-A/B/C2V4
V
R
= 1 V
50
µ
A
BZX79-A/B/C2V7
V
R
= 1 V
20
µ
A
BZX79-A/B/C3V0
V
R
= 1 V
10
µ
A
BZX79-A/B/C3V3
V
R
= 1 V
5
µ
A
BZX79-A/B/C3V6
V
R
= 1 V
5
µ
A
BZX79-A/B/C3V9
V
R
= 1 V
3
µ
A
BZX79-A/B/C4V3
V
R
= 1 V
3
µ
A
BZX79-A/B/C4V7
V
R
= 2 V
3
µ
A
BZX79-A/B/C5V1
V
R
= 2 V
2
µ
A
BZX79-A/B/C5V6
V
R
= 2 V
1
µ
A
BZX79-A/B/C6V2
V
R
= 4 V
3
µ
A
BZX79-A/B/C6V8
V
R
= 4 V
2
µ
A
BZX79-A/B/C7V5
V
R
= 5 V
1
µ
A
BZX79-A/B/C8V2
V
R
= 5 V
700
nA
BZX79-A/B/C9V1
V
R
= 6 V
500
nA
BZX79-A/B/C10
V
R
= 7 V
200
nA
BZX79-A/B/C11
V
R
= 8 V
100
nA
BZX79-A/B/C12
V
R
= 8 V
100
nA
BZX79-A/B/C13
V
R
= 8 V
100
nA
BZX79-A/B/C15 to 75
V
R
= 0.7V
Znom
50
nA
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1999
May
25
4
Philips Semiconductors
Product specification
V
oltage regulator diodes
BZX79 series
Table 1
Per type BZX79-A/B2V4 to A/B24
T
j
= 25
°
C unless otherwise specified.
BZX79-
A or B
XXX
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 5 mA
DIFFERENTIAL RESISTANCE
r
dif
(
)
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 5 mA
(see Figs 5 and 6)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at t
p
= 100
µ
s; T
amb
= 25
°
C
Tol.
±
1% (A)
Tol.
±
2% (B)
at I
Ztest
= 1 mA
at I
Ztest
= 5 mA
MIN.
MAX.
MIN.
MAX.
TYP.
MAX.
TYP.
MAX.
MIN.
TYP.
MAX.
MAX.
MAX.
2V4
2.37
2.43
2.35
2.45
275
600
70
100
3.5
1.6
0
450
6.0
2V7
2.67
2.73
2.65
2.75
300
600
75
100
3.5
2.0
0
450
6.0
3V0
2.97
3.03
2.94
3.06
325
600
80
95
3.5
2.1
0
450
6.0
3V3
3.26
3.34
3.23
3.37
350
600
85
95
3.5
2.4
0
450
6.0
3V6
3.56
3.64
3.53
3.67
375
600
85
90
3.5
2.4
0
450
6.0
3V9
3.86
3.94
3.82
3.98
400
600
85
90
3.5
2.5
0
450
6.0
4V3
4.25
4.35
4.21
4.39
410
600
80
90
3.5
2.5
0
450
6.0
4V7
4.65
4.75
4.61
4.79
425
500
50
80
3.5
1.4
0.2
300
6.0
5V1
5.04
5.16
5.00
5.20
400
480
40
60
2.7
0.8
1.2
300
6.0
5V6
5.54
5.66
5.49
5.71
80
400
15
40
2.0
1.2
2.5
300
6.0
6V2
6.13
6.27
6.08
6.32
40
150
6
10
0.4
2.3
3.7
200
6.0
6V8
6.73
6.87
6.66
6.94
30
80
6
15
1.2
3.0
4.5
200
6.0
7V5
7.42
7.58
7.35
7.65
30
80
6
15
2.5
4.0
5.3
150
4.0
8V2
8.11
8.29
8.04
8.36
40
80
6
15
3.2
4.6
6.2
150
4.0
9V1
9.00
9.20
8.92
9.28
40
100
6
15
3.8
5.5
7.0
150
3.0
10
9.90
10.10
9.80
10.20
50
150
8
20
4.5
6.4
8.0
90
3.0
11
10.89
11.11
10.80
11.20
50
150
10
20
5.4
7.4
9.0
85
2.5
12
11.88
12.12
11.80
12.20
50
150
10
25
6.0
8.4
10.0
85
2.5
13
12.87
13.13
12.70
13.30
50
170
10
30
7.0
9.4
11.0
80
2.5
15
14.85
15.15
14.70
15.30
50
200
10
30
9.2
11.4
13.0
75
2.0
16
15.84
16.16
15.70
16.30
50
200
10
40
10.4
12.4
14.0
75
1.5
18
17.82
18.18
17.60
18.40
50
225
10
45
12.4
14.4
16.0
70
1.5
20
19.80
20.20
19.60
20.40
60
225
15
55
14.4
16.4
18.0
60
1.5
22
21.78
22.22
21.60
22.40
60
250
20
55
16.4
18.4
20.0
60
1.25
24
23.76
24.24
23.50
24.50
60
250
25
70
18.4
20.4
22.0
55
1.25
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1999
May
25
5
Philips Semiconductors
Product specification
V
oltage regulator diodes
BZX79 series
Table 2
Per type BZX79-A/B27 to A/B75
T
j
= 25
°
C unless otherwise specified.
BZX79-
A or B
XXX
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 2 mA
DIFFERENTIAL RESISTANCE
r
dif
(
)
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 2 mA
(see Figs 5 and 6)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at t
p
= 100
µ
s; T
amb
= 25
°
C
Tol.
±
1% (A)
Tol.
±
2% (B)
at I
Ztest
= 0.5 mA
at I
Ztest
= 2 mA
MIN.
MAX.
MIN.
MAX.
TYP.
MAX.
TYP.
MAX.
MIN.
TYP.
MAX.
MAX.
MAX.
27
26.73
27.27
26.50
27.50
65
300
25
80
21.4
23.4
25.3
50
1.0
30
29.70
30.30
29.40
30.60
70
300
30
80
24.4
26.6
29.4
50
1.0
33
32.67
33.33
32.30
33.70
75
325
35
80
27.4
29.7
33.4
45
0.9
36
35.64
36.36
35.30
36.70
80
350
35
90
30.4
33.0
37.4
45
0.8
39
38.61
39.39
38.20
39.80
80
350
40
130
33.4
36.4
41.2
45
0.7
43
42.57
43.43
42.10
43.90
85
375
45
150
37.6
41.2
46.6
40
0.6
47
46.53
47.47
46.10
47.90
85
375
50
170
42.0
46.1
51.8
40
0.5
51
50.49
51.51
50.00
52.00
90
400
60
180
46.6
51.0
57.2
40
0.4
56
55.44
56.56
54.90
57.10
100
425
70
200
52.2
57.0
63.8
40
0.3
62
61.38
62.62
60.80
63.20
120
450
80
215
58.8
64.4
71.6
35
0.3
68
67.32
68.68
66.60
69.40
150
475
90
240
65.6
71.7
79.8
35
0.25
75
74.25
75.75
73.50
76.50
170
500
95
255
73.4
80.2
88.6
35
0.2
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1999
May
25
6
Philips Semiconductors
Product specification
V
oltage regulator diodes
BZX79 series
Table 3
Per type BZX79-C2V4 to C24
T
j
= 25
°
C unless otherwise specified.
BZX79
- C
XXX
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 5 mA
DIFFERENTIAL RESISTANCE
r
dif
(
)
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 5 mA
(see Figs 5 and 6)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at t
p
= 100
µ
s; T
amb
= 25
°
C
Tol. approx.
±
5% (C)
at I
Ztest
= 1 mA
at I
Ztest
= 5 mA
MIN.
MAX.
TYP.
MAX.
TYP.
MAX.
MIN.
TYP.
MAX.
MAX.
MAX.
2V4
2.2
2.6
275
600
70
100
3.5
1.6
0
450
6.0
2V7
2.5
2.9
300
600
75
100
3.5
2.0
0
450
6.0
3V0
2.8
3.2
325
600
80
95
3.5
2.1
0
450
6.0
3V3
3.1
3.5
350
600
85
95
3.5
2.4
0
450
6.0
3V6
3.4
3.8
375
600
85
90
3.5
2.4
0
450
6.0
3V9
3.7
4.1
400
600
85
90
3.5
2.5
0
450
6.0
4V3
4.0
4.6
410
600
80
90
3.5
2.5
0
450
6.0
4V7
4.4
5.0
425
500
50
80
3.5
1.4
0.2
300
6.0
5V1
4.8
5.4
400
480
40
60
2.7
0.8
1.2
300
6.0
5V6
5.2
6.0
80
400
15
40
2.0
1.2
2.5
300
6.0
6V2
5.8
6.6
40
150
6
10
0.4
2.3
3.7
200
6.0
6V8
6.4
7.2
30
80
6
15
1.2
3.0
4.5
200
6.0
7V5
7.0
7.9
30
80
6
15
2.5
4.0
5.3
150
4.0
8V2
7.7
8.7
40
80
6
15
3.2
4.6
6.2
150
4.0
9V1
8.5
9.6
40
100
6
15
3.8
5.5