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BYT230PIV-400
BYT231PIV-400
May 2000 - Ed: 5D
FAST RECOVERY RECTIFIER DIODES
®
These rectifier devices are suited for free-wheeling
function in converters and motor control circuits.
Packaged in ISOTOP, they are intended for use in
Switch Mode Power Supplies.
DESCRIPTION
n
VERY LOW REVERSE RECOVERY TIME
n
VERY LOW SWITCHING LOSSES
n
LOW NOISE TURN-OFF SWITCHING
n
INSULATED PACKAGE: ISOTOP
Insulation voltage: 2500 V
RMS
Capacitance = 45 pF
Inductance < 5 nH
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
400
V
I
FRM
Repetitive peak forward current
tp=5
µ
s F=1kHz
900
A
I
F(RMS)
RMS forward current
50
A
I
F(AV)
Average forward current
Tc = 75
°
C
δ
= 0.5
30
A
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
350
A
T
stg
Storage temperature range
- 40 to + 150
°
C
Tj
Maximum operating junction temperature
150
°
C
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
2 x 30 A
V
RRM
400 V
V
F
(max)
1.4 V
trr (max)
50 ns
MAIN PRODUCT CHARACTERISTICS
ISOTOP
TM
(Plastic)
K2
A2
A1
K1
BYT231PIV-400
A2
K1
A1
K2
BYT230PIV-400
TM: ISOTOP is a registered trademark of STMicroelectronics.
BYT230PIV-400 / BYT231PIV-400
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Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
F
*
Forward voltage drop
Tj = 25
°
C
I
F
= 30 A
1.5
V
Tj = 100
°
C
1.4
I
R
**
Reverse leakage cur-
rent
Tj = 25
°
C
V
R
= V
RRM
35
µ
A
Tj = 100
°
C
6
mA
Pulse test : * tp = 380
µ
s,
δ
< 2%
** tp = 5 ms,
δ
< 2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
Per diode
Total
1.5
0.8
°
C/W
R
th(c)
Coupling
0.1
When the diodes 1 and 2 are used simultaneously :
∆
Tj(diode 1) = P(diode) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
THERMAL RESISTANCES
To evaluate the conduction losses use the following equation:
P = 1.1 x I
F(AV)
+ 0.0095 I
F
2
(RMS)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
t
rr
Tj = 25
°
C
I
F
= 1A V
R
= 30V dI
F
/dt = - 15A/
µ
s
100
ns
I
F
= 0.5A I
R
= 1A I
rr
= 0.25A
50
RECOVERY CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t
IRM
M ax i m um r ev er s e
rec ov er y t im e
dI
F
/dt = - 120 A/
µ
s
V
CC
= 200 V
I
F
= 30 A
L
p
®
0.05
µ
H
Tj = 100
°
C
(see fig. 13)
75
ns
dI
F
/dt = - 240 A/
µ
s
50
I
RM
M ax i m um r ev er s e
rec ov er y c ur r ent
dI
F
/dt = - 120 A/
µ
s
9
A
dI
F
/dt = - 240 A/
µ
s
12
C =
V
V
RP
CC
Turn-off overvoltage
coefficient
Tj = 100
°
C
V
CC
= 60V
I
F
= I
F(AV)
dI
F
/dt = - 30A/
µ
s
L
p
= 1
µ
H
(see fig. 14)
3.3
/
TURN-OFF SWITCHING CHARACTERISTICS
BYT230PIV-400 / BYT231PIV-400
3/6
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
50
100
150
200
250
IM(A)
δ
P=40W
P=30W
P=50W
P=20W
T
δ
=tp/T
tp
Fig. 2: Peak current versus form factor (per diode).
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
Tamb(
°
C)
IF(av)(A)
Rth(j-a)=5
°
C/W
Rth(j-a)=Rth(j-c)
T
δ
=tp/T
tp
Fig. 3: Average forward current versus ambient
temperature (
δ
=0.5, per diode).
1E-3
1E-2
1E-1
1E+0
40
60
80
100
120
140
160
180
200
t(s)
IM(A)
Tc=75
°
C
Tc=50
°
C
Tc=25
°
C
I
M
t
δ
=0.5
Fig. 4: Non repetitive surge peak forward current
versus overload duration (per diode).
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
IF(av) (A)
PF(av)(W)
T
δ
=tp/T
tp
δ
= 1
δ
= 0.5
δ
= 0.2
δ
= 0.1
δ
= 0.05
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0.0
0.5
1.0
1.5
2.0
2.5
0.1
1.0
10.0
100.0
200.0
VFM(V)
IFM(A)
Typical values
Tj=100
°
C
Tj=25
°
C
Tj=100
°
C
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode).
1E-3
1E-2
1E-1
1E+0
0.1
0.2
0.5
1.0
tp(s)
K=[Zth(j-c)/Rth(j-c)]
T
δ
=tp/T
tp
Single pulse
δ
= 0.1
δ
= 0.2
δ
= 0.5
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
BYT230PIV-400 / BYT231PIV-400
4/6
1
10
100
200
20
30
40
50
60
70
80
90
100
VR(V)
C(pF)
F=1MHz
Tj=25
°
C
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
10
20
50
100
200
500
10
100
1000
dIF/dt(A/
µ
s)
Qrr(nC)
IF=IF(av)
90% confidence
Tj=100
°
C
Fig. 8: Recovery charges versus dI
F
/dt (per
diode).
0
100
200
300
400
500
0
5
10
15
20
25
30
VFP(V)
IF=IF(av)
90% confidence
Tj=100
°
C
dIF/dt(A/
µ
s)
Fig. 10: Transient peak forward voltage versus
dI
F
/dt (per diode).
10
20
50
100
200
500
1
10
50
IRM(A)
IF=IF(av)
90% confidence
Tj=100
°
C
dIF/dt(A/
µ
s)
Fig. 9: Recovery current versus dI
F
/dt (per diode).
0
25
50
75
100
125
150
0.25
0.50
0.75
1.00
1.25
1.50
Tj(
°
C)
Qrr;IRM[Tj] / Qrr;IRM[Tj=100
°
C]
IRM
Qrr
Fig. 12: Dynamic parameters versus junction
temperature.
0
100
200
300
400
500
0.00
0.25
0.50
0.75
1.00
1.25
1.50
tfr(
µ
s)
IF=IF(av)
90% confidence
Tj=100
°
C
dIF/dt(A/
µ
s)
Fig. 11: Forward recovery time versus dI
F
/dt (per
diode).
BYT230PIV-400 / BYT231PIV-400
5/6
L C
DUT
VCC
IF
VF
I RM
VCC
tIRM
di F/ dt
Fig. 13: Turn-off switching characteristics (without
serie inductance).
LC
DUT
VCC
LP
IF
VF
VRP
VCC
di F/ dt
Fig. 14: Turn-off switching characteristics (with
serie inductance).
BYT230PIV-400 / BYT231PIV-400
6/6
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
©
2000 STMicroelectronics - Printed in Italy - All rights reserved.
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http://www.st.com
Ordering type
Marking
Package
Weight
Base qty
Delivery
mode
BYT230PIV-400
BYT230PIV-400
ISOTOP
28 g. (without screws)
10
Tube
BYT231PIV-400
BYT231PIV-400
ISOTOP
28 g. (without screws)
10
Tube
n
Cooling method: by conduction (C)
n
Recommended torque value : 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recom-
mended for mounting the package on the heatsink and the 4 screws given with the screw version).The
screws supplied with the package are adapted for mounting on a board (or other types of terminals) with
a thickness of 0.6 mm min and 2.2 mm max.
n
Epoxy meets UL94,V0
PACKAGE MECHANICAL DATA
ISOTOP
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
11.80
12.20
0.465
0.480
A1
8.90
9.10
0.350
0.358
B
7.8
8.20
0.307
0.323
C
0.75
0.85
0.030
0.033
C2
1.95
2.05
0.077
0.081
D
37.80
38.20
1.488
1.504
D1
31.50
31.70
1.240
1.248
E
25.15
25.50
0.990
1.004
E1
23.85
24.15
0.939
0.951
E2
24.80 typ.
0.976 typ.
G
14.90
15.10
0.587
0.594
G1
12.60
12.80
0.496
0.504
G2
3.50
4.30
0.138
0.169
F
4.10
4.30
0.161
0.169
F1
4.60
5.00
0.181
0.197
P
4.00
4.30
0.157
0.69
P1
4.00
4.40
0.157
0.173
S
30.10
30.30
1.185
1.193