DATA SHEET
Product specification
Supersedes data of 1996 Oct 28
1999 May 11
DISCRETE SEMICONDUCTORS
BZV49 series
Voltage regulator diodes
book, halfpage
M3D109
1999 May 11
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
FEATURES
•
Total power dissipation: max. 1 W
•
Tolerance series: approx.
±
5%
•
Working voltage range:
nom. 2.4 to 75 V (E24 range)
•
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
•
General regulation functions.
DESCRIPTION
Medium-power voltage regulator
diodes in a SOT89 plastic SMD
package.
The diodes are available in the
normalized E24 approx.
±
5%
tolerance range. The series consists
of 37 types with nominal working
voltages from 2.4 to 75 V
(BZV49-C2V4 to BZV49-C75).
PINNING
PIN
DESCRIPTION
1
anode
2
anode
3
cathode
Fig.1 Simplified outline (SOT89) and symbol.
handbook, halfpage
1
3
2
Bottom view
MAM244
3
1
2
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZV49-C2V4
2Y4
BZV49-C6V2
6Y2
BZV49-C16
16Y
BZV49-C43
43Y
BZV49-C2V7
2Y7
BZV49-C6V8
6Y8
BZV49-C18
18Y
BZV49-C47
47Y
BZV49-C3V0
3Y0
BZV49-C7V5
7Y5
BZV49-C20
20Y
BZV49-C51
51Y
BZV49-C3Y3
3Y3
BZV49-C8V2
8Y2
BZV49-C22
22Y
BZV49-C56
56Y
BZV49-C3V6
3Y6
BZV49-C9V1
9Y1
BZV49-C24
24Y
BZV49-C62
62Y
BZV49-C3V9
3Y9
BZV49-C10
10Y
BZV49-C27
27Y
BZV49-C68
68Y
BZV49-C4V3
4Y3
BZV49-C11
11Y
BZV49-C30
30Y
BZV49-C75
75Y
BZV49-C4V7
4Y7
BZV49-C12
12Y
BZV49-C33
33Y
−
−
BZV49-C5V1
5Y1
BZV49-C13
13Y
BZV49-C36
36Y
−
−
BZV49-C5V6
5Y6
BZV49-C15
15Y
BZV49-C39
39Y
−
−
1999 May 11
3
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm
2
; thickness = 0.7 mm.
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
F
continuous forward current
−
250
mA
I
ZSM
non-repetitive peak reverse current
t
p
= 100
µ
s; square wave;
T
j
= 25
°
C prior to surge
see Table
“Per type”
P
tot
total power dissipation
T
amb
= 25
°
C; note 1
−
1
W
P
ZSM
non-repetitive peak reverse power
dissipation
t
p
= 100
µ
s; square wave;
T
j
= 25
°
C prior to surge; see Fig.2
−
40
W
T
stg
storage temperature
−
65
+150
°
C
T
j
junction temperature
−
150
°
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 50 mA; see Fig.3
1
V
1999
May
11
4
Philips Semiconductors
Product specification
V
oltage regulator diodes
BZV49 series
Per type
T
j
= 25
°
C unless otherwise specified.
BZV49-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(
Ω
)
at I
Ztest
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
see Figs 4 and 5
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at t
p
= 100
µ
s;
T
amb
= 25
°
C
I
R
(
µ
A)
V
R
(V)
MIN.
MAX.
TYP.
MAX.
MIN.
TYP.
MAX.
MAX.
MAX.
MAX.
2V4
2.2
2.6
70
100
−
3.5
−
1.6
0
5
450
50
1.0
6.0
2V7
2.5
2.9
75
100
−
3.5
−
2.0
0
5
450
20
1.0
6.0
3V0
2.8
3.2
80
95
−
3.5
−
2.1
0
5
450
10
1.0
6.0
3V3
3.1
3.5
85
95
−
3.5
−
2.4
0
5
450
5
1.0
6.0
3V6
3.4
3.8
85
90
−
3.5
−
2.4
0
5
450
5
1.0
6.0
3V9
3.7
4.1
85
90
−
3.5
−
2.5
0
5
450
3
1.0
6.0
4V3
4.0
4.6
80
90
−
3.5
−
2.5
0
5
450
3
1.0
6.0
4V7
4.4
5.0
50
80
−
3.5
−
1.4
+0.2
5
300
3
2.0
6.0
5V1
4.8
5.4
40
60
−
2.7
−
0.8
+1.2
5
300
2
2.0
6.0
5V6
5.2
6.0
15
40
−
2.0
+1.2
+2.5
5
300
1
2.0
6.0
6V2
5.8
6.6
6
10
0.4
2.3
3.7
5
200
3
4.0
6.0
6V8
6.4
7.2
6
15
1.2
3.0
4.5
5
200
2
4.0
6.0
7V5
7.0
7.9
6
15
2.5
4.0
5.3
5
150
1
5.0
4.0
8V2
7.7
8.7
6
15
3.2
4.6
6.2
5
150
0.7
5.0
4.0
9V1
8.5
9.6
6
15
3.8
5.5
7.0
5
150
0.5
6.0
3.0
10
9.4
10.6
8
20
4.5
6.4
8.0
5
90
0.2
7.0
3.0
11
10.4
11.6
10
20
5.4
7.4
9.0
5
85
0.1
8.0
2.5
12
11.4
12.7
10
25
6.0
8.4
10.0
5
85
0.1
8.0
2.5
13
12.4
14.1
10
30
7.0
9.4
11.0
5
80
0.1
8.0
2.5
15
13.8
15.6
10
30
9.2
11.4
13.0
5
75
0.05
10.5
2.0
16
15.3
17.1
10
40
10.4
12.4
14.0
5
75
0.05
11.2
1.5
18
16.8
19.1
10
45
12.4
14.4
16.0
5
70
0.05
12.6
1.5
20
18.8
21.2
15
55
14.4
16.4
18.0
5
60
0.05
14.0
1.5
1999
May
11
5
Philips Semiconductors
Product specification
V
oltage regulator diodes
BZV49 series
22
20.8
23.3
20
55
16.4
18.4
20.0
5
60
0.05
15.4
1.25
24
22.8
25.6
25
70
18.4
20.4
22.0
5
55
0.05
16.8
1.25
27
25.1
28.9
25
80
21.4
23.4
25.3
2
50
0.05
18.9
1.0
30
28.0
32.0
30
80
24.4
26.6
29.4
2
50
0.05
21.0
1.0
33
31.0
35.0
35
80
27.4
29.7
33.4
2
45
0.05
23.1
0.9
36
34.0
38.0
35
90
30.4
33.0
37.4
2
45
0.05
25.2
0.8
39
37.0
41.0
40
130
33.4
36.4
41.2
2
45
0.05
27.3
0.7
43
40.0
46.0
45
150
37.6
41.2
46.6
2
40
0.05
30.1
0.6
47
44.0
50.0
50
170
42.0
46.1
51.8
2
40
0.05
32.9
0.5
51
48.0
54.0
60
180
46.6
51.0
57.2
2
40
0.05
35.7
0.4
56
52.0
60.0
70
200
52.2
57.0
63.8
2
40
0.05
39.2
0.3
62
58.0
66.0
80
215
58.8
64.4
71.6
2
35
0.05
43.4
0.3
68
64.0
72.0
90
240
65.6
71.7
79.8
2
35
0.05
47.6
0.25
75
70.0
79.0
95
255
73.4
80.2
88.6
2
35
0.05
52.5
0.2
BZV49-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(
Ω
)
at I
Ztest
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
see Figs 4 and 5
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at t
p
= 100
µ
s;
T
amb
= 25
°
C
I
R
(
µ
A)
V
R
(V)
MIN.
MAX.
TYP.
MAX.
MIN.
TYP.
MAX.
MAX.
MAX.
MAX.
1999 May 11
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm
2
; thickness = 0.7 mm.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
15
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
125
K/W
GRAPHICAL DATA
Fig.2
Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
handbook, halfpage
MBG801
10
3
1
duration (ms)
PZSM
(W)
10
10
2
10
−
1
10
1
(1)
(2)
(1) T
j
= 25
°
C (prior to surge).
(2) T
j
= 150
°
C (prior to surge).
Fig.3
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0.6
1.0
300
100
0
200
MBG781
0.8
VF (V)
IF
(mA)
T
j
= 25
°
C.
1999 May 11
7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
Fig.4 Temperature coefficient as a function of working current; typical values.
handbook, full pagewidth
−
3
1
MBG927
10
-
3
10
-
2
10
-
1
1
IZ (A)
−
2
0
−
1
SZ
(mV/K)
4V3
3V9
3V6
3V3
3V0
2V7
2V4
BZV49-C2V4 to C4V3.
T
j
= 25 to 150
°
C.
Fig.5
Temperature coefficient as a function of
working current; typical values.
handbook, halfpage
0
20
16
10
0
−
5
5
MBG924
4
8
12
IZ (mA)
SZ
(mV/K)
4V7
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
BZV49-C4V7 to C10.
T
j
= 25 to 150
°
C.
1999 May 11
8
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
DIMENSIONS (mm are the original dimensions)
SOT89
97-02-28
w
M
e
1
e
E
HE
B
0
2
4 mm
scale
b3
b2
b1
c
D
L
A
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
1
2
3
UNIT
A
mm
1.6
1.4
0.48
0.35
c
0.44
0.37
D
4.6
4.4
E
2.6
2.4
HE
4.25
3.75
e
3.0
w
0.13
e1
1.5
L
min.
0.8
b2
b1
0.53
0.40
b3
1.8
1.4
1999 May 11
9
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 May 11
10
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
NOTES
1999 May 11
11
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
NOTES
© Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999
64
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