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PHB2N50E datasheet



datasheet for PHB2N50E by Philips Semiconductors   Electronic component partname: PHB2N50E

PHB2N50E description: PowerMOS transistor. Avalanche energy rated.

Manufacturer: Philips Semiconductors

Temperature range: Min: -55°C | Max: 150°C

Chip package & pins: SOT404 (Pins: 3)

Datasheet file format: PDF (Requires Adobe Acrobat Reader)

PHB2N50E datasheet size: 93Kb

Download PHB2N50E datasheet: PHB2N50E


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