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DATA SHEET
Product specification
Supersedes data of October 1991
File under Discrete Semiconductors, SC01
1996 Jun 10
DISCRETE SEMICONDUCTORS
BZD27 series
Voltage regulator diodes
ok, halfpage
M3D121
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1996 Jun 10
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Zener working voltage range:
3.6 to 270 V for 46 types
Transient suppressor stand-off
voltage range: 6.2 to 430 V
for 45 types
Supplied in 8 mm embossed tape.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD87) and symbol.
handbook, 4 columns
MAM249
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
P
tot
total power dissipation
T
tp
= 105
°
C; see Figs 2 and 3
BZD27-C3V6 to -C6V8
1.7
W
BZD27-C7V5 to -C510
2.3
W
P
tot
total power dissipation
PCB mounted (see Fig.7)
BZD27-C3V6 to -C6V8
T
amb
= 60
°
C; see Fig.2
0.8
W
BZD27-C7V5 to -C510
T
amb
= 55
°
C; see Fig.3
0.8
W
P
ZSM
non-repetitive peak reverse
power dissipation
t
p
= 100
µ
s; square pulse;
T
j
= 25
°
C prior to surge; see Figs.4 and 5
BZD27-C3V6 to -C6V8
300
W
BZD27-C7V5 to -C510
300
W
P
RSM
non-repetitive peak reverse
power dissipation
10/1000
µ
s exponential pulse (see Fig.8);
T
j
= 25
°
C prior to surge
BZD27-C7V5 to -C510
150
W
T
stg
storage temperature
BZD27-C3V6 to -C6V8
65
+200
°
C
BZD27-C7V5 to -C510
65
+175
°
C
T
j
junction temperature
BZD27-C3V6 to -C6V8
65
+200
°
C
BZD27-C7V5 to -C510
65
+175
°
C
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1996 Jun 10
3
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°
C unless otherwise specified.
Per type when used as voltage regulator diodes
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
F
forward voltage
I
F
= 0.2 A; see Fig.6
1.2
V
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
DIFFERENTIAL
RESISTANCE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
REVERSE CURRENT
at REVERSE VOLTAGE
V
Z
(V) at I
Z
r
dif
(
) at I
Z
S
Z
(%/K) at I
Z
I
Z
(mA)
I
R
(
µ
A)
V
R
(V)
MIN.
NOM.
MAX.
TYP.
MAX.
MIN.
MAX.
MAX.
C3V6
3.4
3.6
3.8
4
8
0.14
0.04
100
100
1
C3V9
3.7
3.9
4.1
4
8
0.14
0.04
100
50
1
C4V3
4.0
4.3
4.6
4
7
0.12
0.02
100
25
1
C4V7
4.4
4.7
5.0
3
7
0.10
0.00
100
10
1
C5V1
4.8
5.1
5.4
3
6
0.08
0.02
100
5
1
C5V6
5.2
5.6
6.0
2
4
0.04
0.04
100
10
2
C6V2
5.8
6.2
6.6
2
3
0.01
0.06
100
5
2
C6V8
6.4
6.8
7.2
1
3
0.00
0.07
100
10
3
C7V5
7.0
7.5
7.9
1
2
0.00
0.07
100
50
3
C8V2
7.7
8.2
8.7
1
2
0.03
0.08
100
10
3
C9V1
8.5
9.1
9.6
2
4
0.03
0.08
50
10
5
C10
9.4
10
10.6
2
4
0.05
0.09
50
7
7.5
C11
10.4
11
11.6
4
7
0.05
0.10
50
4
8.2
C12
11.4
12
12.7
4
7
0.05
0.10
50
3
9.1
C13
12.4
13
14.1
5
10
0.05
0.10
50
2
10
C15
13.8
15
15.6
5
10
0.05
0.10
50
1
11
C16
15.3
16
17.1
6
15
0.06
0.11
25
1
12
C18
16.8
18
19.1
6
15
0.06
0.11
25
1
13
C20
18.8
20
21.2
6
15
0.06
0.11
25
1
15
C22
20.8
22
23.3
6
15
0.06
0.11
25
1
16
C24
22.8
24
25.6
7
15
0.06
0.11
25
1
18
C27
25.1
27
28.9
7
15
0.06
0.11
25
1
20
C30
28
30
32
8
15
0.06
0.11
25
1
22
C33
31
33
35
8
15
0.06
0.11
25
1
24
C36
34
36
38
21
40
0.06
0.11
10
1
27
C39
37
39
41
21
40
0.06
0.11
10
1
30
C43
40
43
46
24
45
0.07
0.12
10
1
33
C47
44
47
50
24
45
0.07
0.12
10
1
36
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1996 Jun 10
4
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
Note
1. To complete the type number the suffix is added to the basic type number, e.g. BZD27-C51.
C51
48
51
54
25
60
0.07
0.12
10
1
39
C56
52
56
60
25
60
0.07
0.12
10
1
43
C62
58
62
66
25
80
0.08
0.13
10
1
47
C68
64
68
72
25
80
0.08
0.13
10
1
51
C75
70
75
79
30
100
0.08
0.13
10
1
56
C82
77
82
87
30
100
0.08
0.13
10
1
62
C91
85
91
96
60
200
0.09
0.13
5
1
68
C100
94
100
106
60
200
0.09
0.13
5
1
75
C110
104
110
116
80
250
0.09
0.13
5
1
82
C120
114
120
127
80
250
0.09
0.13
5
1
91
C130
124
130
141
110
300
0.09
0.13
5
1
100
C150
138
150
156
130
300
0.09
0.13
5
1
110
C160
153
160
171
150
350
0.09
0.13
5
1
120
C180
168
180
191
180
400
0.09
0.13
5
1
130
C200
188
200
212
200
500
0.09
0.13
5
1
150
C220
208
220
233
350
750
0.09
0.13
2
1
160
C240
228
240
256
400
850
0.09
0.13
2
1
180
C270
251
270
289
450
1000
0.09
0.13
2
1
200
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
DIFFERENTIAL
RESISTANCE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
REVERSE CURRENT
at REVERSE VOLTAGE
V
Z
(V) at I
Z
r
dif
(
) at I
Z
S
Z
(%/K) at I
Z
I
Z
(mA)
I
R
(
µ
A)
V
R
(V)
MIN.
NOM.
MAX.
TYP.
MAX.
MIN.
MAX.
MAX.
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1996 Jun 10
5
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
Per type when used as transient suppressor diodes
T
j
= 25
°
C unless otherwise specified.
TYPE
NUMBER
REVERSE
BREAKDOWN
VOLTAGE
TEMPERATURE
COEFFICIENT
TEST
CURREN
T
CLAMPING
VOLTAGE
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
V
(BR)R
(V)
at I
test
S
Z
(%/K) at I
test
I
test
(mA)
V
(CL)R
(V)
at I
RSM
(A)
note 1
I
R
(
µ
A)
at V
R
(V)
MIN.
MIN.
MAX.
MAX.
MAX.
BZD27-C7V5
7.0
0.00
0.07
100
11.3
13.3
1500
6.2
BZD27-C8V2
7.7
0.03
0.08
100
12.3
12.2
1200
6.8
BZD27-C9V1
8.5
0.03
0.08
50
13.3
11.3
100
7.5
BZD27-C10
9.4
0.05
0.09
50
14.8
10.1
20
8.2
BZD27-C11
10.4
0.05
0.10
50
15.7
9.6
5
9.1
BZD27-C12
11.4
0.05
0.10
50
17.0
8.8
5
10
BZD27-C13
12.4
0.05
0.10
50
18.9
7.9
5
11
BZD27-C15
13.8
0.05
0.10
50
20.9
7.2
5
12
BZD27-C16
15.3
0.06
0.11
25
22.9
6.6
5
13
BZD27-C18
16.8
0.06
0.11
25
25.6
5.9
5
15
BZD27-C20
18.8
0.06
0.11
25
28.4
5.3
5
16
BZD27-C22
20.8
0.06
0.11
25
31.0
4.8
5
18
BZD27-C24
22.8
0.06
0.11
25
33.8
4.4
5
20
BZD27-C27
25.1
0.06
0.11
25
38.1
3.9
5
22
BZD27-C30
28
0.06
0.11
25
42.2
3.6
5
24
BZD27-C33
31
0.06
0.11
25
46.2
3.2
5
27
BZD27-C36
34
0.06
0.11
10
50.1
3.0
5
30
BZD27-C39
37
0.06
0.11
10
54.1
2.8
5
33
BZD27-C43
40
0.07
0.12
10
60.7
2.5
5
36
BZD27-C47
44
0.07
0.12
10
65.5
2.3
5
39
BZD27-C51
48
0.07
0.12
10
70.8
2.1
5
43
BZD27-C56
52
0.07
0.12
10
78.6
1.9
5
47
BZD27-C62
58
0.08
0.13
10
86.5
1.7
5
51
BZD27-C68
64
0.08
0.13
10
94.4
1.6
5
56
BZD27-C75
70
0.08
0.13
10
103.5
1.5
5
62
BZD27-C82
77
0.08
0.13
10
114
1.3
5
68
BZD27-C91
85
0.09
0.13
5
126
1.2
5
75
BZD27-C100
94
0.09
0.13
5
139
1.1
5
82
BZD27-C110
104
0.09
0.13
5
152
1.0
5
91
BZD27-C120
114
0.09
0.13
5
167
0.90
5
100
BZD27-C130
124
0.09
0.13
5
185
0.81
5
110
BZD27-C150
138
0.09
0.13
5
204
0.73
5
120
BZD27-C160
153
0.09
0.13
5
224
0.67
5
130
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1996 Jun 10
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
Note
1. Non-repetitive peak reverse current in accordance with
“IEC 60-1, Section 8” (10/1000
µ
s pulse); see Fig.8.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
µ
m, see Fig.7.
For more information please refer to the
‘General Part of Handbook SC01’.
BZD27-C180
168
0.09
0.13
5
249
0.60
5
150
BZD27-C200
188
0.09
0.13
5
276
0.54
5
160
BZD27-C220
208
0.09
0.13
2
305
0.50
5
180
BZD27-C240
228
0.09
0.13
2
336
0.45
5
200
BZD27-C270
251
0.09
0.13
2
380
0.40
5
220
BZD27-C300
280
0.09
0.13
2
419
0.36
5
240
BZD27-C330
310
0.09
0.13
2
459
0.33
5
270
BZD27-C360
340
0.09
0.13
2
498
0.30
5
300
BZD27-C390
370
0.09
0.13
2
537
0.28
5
330
BZD27-C430
400
0.09
0.13
2
603
0.25
5
360
BZD27-C470
440
0.09
0.13
2
655
0.23
5
390
BZD27-C510
480
0.09
0.13
2
707