BAR43/A/C/S
BAR43, Rev.
B
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Mounted on ceramic substrate 10mm x 8mm x 0.6mm.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
BAR43/A/C/S
Thermal Characteristics
Schottky Diodes
Symbol
Parameter
Value
Units
V
RRM
Maximum Repetitive Reverse Voltage
30
V
I
F(AV)
Average Rectified Forward Current
200
mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
750
mA
T
stg
Storage Temperature Range
-55 to +150
°
C
T
J
Operating Junction Temperature
150
°
C
Symbol
Parameter
Value
Units
P
D
Power
Dissipation
290
mW
R
θ
JA
Thermal Resistance, Junction to Ambient
430
°
C/W
Connection Diagrams
BAR43
BAR43C
1
3
2
1
3
3BAR43A
BAR43S
2
2
3
1
1
3
1
2
SOT-23
Symbol
Parameter
Test Conditions
Min
Max
Units
V
R
Breakdown
Voltage
I
R
= 100
µ
A
30 V
V
F
Forward
Voltage
I
F
= 2.0 mA
I
F
= 15 mA
I
F
= 100 mA
260
330
450
1.0
mV
mV
V
I
R
Reverse
Current
V
R
= 25 V
V
R
= 25 V, T
A
= 100
°
C
0.5
100
µ
A
µ
A
t
rr
Reverse Recovery Time
I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100
Ω
5.0 ns
Minimum Detection Recovery Time I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100
Ω
80%
2NC
1
2
3
D95
MARKING
BAR43 D95 BAR43A DB1
BAR43C DB2 BAR43S DA5
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Advance Information
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This datasheet contains the design specifications for
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2
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