SSH7N60B 600V N-Channel MOSFET

November 2001

Rev. B, November 2001

H7N60B

SSH7N60B

600V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies.

Features

• 7.3A, 600V, R

DS(on)

= 1.2

Ω

= 10 V

• Low gate charge ( typical 38 nC)

• Low Crss ( typical 23 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings

= 25°C unless otherwise noted

Thermal Characteristics

Symbol

Parameter

SSH7N60B

Units

DSS

Drain-Source Voltage

600

Drain Current

- Continuous (T

= 25°C)

7.3

- Continuous (T

= 100°C)

4.6

Drain Current

- Pulsed

(Note 1)

29.2

GSS

Gate-Source Voltage

Single Pulsed Avalanche Energy

(Note 2)

420

Avalanche Current

(Note 1)

7.3

Repetitive Avalanche Energy

(Note 1)

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

5.5

V/ns

Power Dissipation (T

= 25°C)

160

- Derate above 25°C

1.28

W/°C

, T

STG

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8

from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Units

Thermal Resistance, Junction-to-Case

0.78

°C

Thermal Resistance, Case-to-Sink

0.24

°C

Thermal Resistance, Junction-to-Ambient

°C

TO-3P

SSH Series

Rev. B, November 2001

H7N60B

(Note 4)

(Note 4, 5)

(Note 4)

Electrical Characteristics

= 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 14.5mH, I

= 7.3A, V

= 50V, R

= 25

Ω,

Starting T

= 25°C

3. I

7.0A, di/dt

300A/

s, V

DSS,

Starting T

= 25°C

4. Pulse Test : Pulse width

300

s, Duty cycle

5. Essentially independent of operating temperature

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

DSS

Drain-Source Breakdown Voltage

= 0 V, I

= 250

600

∆

DSS

∆

Breakdown Voltage Temperature

Coefficient

= 250

A, Referenced to 25°C

0.65

V/°C

DSS

Zero Gate Voltage Drain Current

= 600 V, V

= 0 V

= 480 V, T

= 125°C

100

GSSF

Gate-Body Leakage Current, Forward

= 30 V, V

= 0 V

100

GSSR

Gate-Body Leakage Current, Reverse

= -30 V, V

= 0 V

-100

On Characteristics

GS(th)

Gate Threshold Voltage

= V

, I

= 250

2.0

4.0

DS(on)

Static Drain-Source

On-Resistance

= 10 V, I

= 3.65 A

1.0

1.2

Ω

Forward Transconductance

= 40 V, I

= 3.65 A

8.4

Dynamic Characteristics

iss

Input Capacitance

= 25 V, V

= 0 V,

f = 1.0 MHz

1380

1800

oss

Output Capacitance

115

150

rss

Reverse Transfer Capacitance

Switching Characteristics

d(on)

Turn-On Delay Time

= 300 V, I

= 7.0 A,

= 25

Ω

Turn-On Rise Time

170

d(off)

Turn-Off Delay Time

125

260

Turn-Off Fall Time

180

Total Gate Charge

= 480 V, I

= 7.0 A,

= 10 V

Gate-Source Charge

6.4

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

7.3

Maximum Pulsed Drain-Source Diode Forward Current

29.2

Drain-Source Diode Forward Voltage

= 0 V, I

= 7.3 A

1.4

Reverse Recovery Time

= 0 V, I

= 7.0 A,

/ dt = 100 A/

415

Reverse Recovery Charge

4.6

Rev. B, November 2001

H7N60B

= 300V

= 120V

= 480V

Note : I

= 7.0 A

, G

Sou

e V

tage [

]

, Total Gate Charge [nC]

-1

500

1000

1500

2000

2500

3000

oss

iss

= C

+ C

= shorted)

oss

= C

+ C

rss

= C

Notes :

1. V

= 0 V

2. f = 1 MHz

rss

iss

apa

e [

pF]

, Drain-Source Voltage [V]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-1

150

Notes :

1. V

= 0V

2. 250

s Pulse Test

, R

se D

rai

n C

]

, Source-Drain voltage [V]

= 20V

= 10V

Note : T

= 25

[

rai

Sour

tanc

, Drain Current [A]

-1

150

-55

Notes :

1. V

= 40V

2. 250

s Pulse Test

, D

rai

n C

]

, Gate-Source Voltage [V]

-1

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom : 5.0 V

Notes :

1. 250

s Pulse Test

2. T

= 25

, D

rai

n C

]

, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

Rev. B, November 2001

H7N60B

1 0

-5

1 0

-4

1 0

-3

1 0

-2

1 0

-1

1 0

-2

1 0

-1

1 0

N o te s :

1 . Z

(

J C

(t) = 0 .7 8

/W M a x .

2 . D u ty F a c to r, D = t

3 . T

J M

- T

= P

D M

* Z

(

J C

(t)

s in g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

(

(t), T

, S q u a re W a v e P u ls e D u ra tio n [s e c ]

100

125

150

, Dr

n Cu

rre

]

, Case Temperature [

]

-2

-1

10 ms

1 ms

100

Operation in This Area

is Limited by R

DS(on)

Notes :

1. T

= 25

2. T

= 150

3. Single Pulse

, D

rai

n C

]

, Drain-Source Voltage [V]

-100

-50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :

1. V

= 10 V

2. I

= 3.5 A

, (

ed)

rai

Sour

, Junction Temperature [

-100

-50

100

150

200

0.8

0.9

1.0

1.1

1.2

Notes :

1. V

= 0 V

2. I

= 250

, (

Nor

ed)

rea

n V

tag

, Junction Temperature [

Typical Characteristics

(Continued)

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Figure 11. Transient Thermal Response Curve

Rev. B, November 2001

H7N60B

Charge

10V

3mA

DUT

300nF

50K

)

200nF

12V

Same Type

as DUT

Charge

10V

3mA

DUT

300nF

50K

)

200nF

12V

Same Type

as DUT

10%

90%

d(on)

off

d(off)

10V

DUT

10%

90%

d(on)

off

d(off)

10V

DUT

L I

----

--------------------

DSS

- V

DSS

(t)

Time

10V