background image
©2002 Fairchild Semiconductor Corporation
SGL160N60UF Rev. A1
IGBT
S
G
L160N60UF
SGL160N60UF
Ultra-Fast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : V
CE
(sat) = 2.1 V @ I
C
= 80A
• High input impedance
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Description
SGL160N60UF
Units
V
CES
Collector-Emitter Voltage
600
V
V
GES
Gate-Emitter Voltage
±
20
V
I
C
Collector Current
@ T
C
= 25
°
C
160
A
Collector Current
@ T
C
= 100
°
C
80
A
I
CM (1)
Pulsed Collector Current
300
A
P
D
Maximum Power Dissipation @ T
C
= 25
°
C
250
W
Maximum Power Dissipation
@ T
C
= 100
°
C
100
W
T
J
Operating Junction Temperature
-55 to +150
°
C
T
stg
Storage Temperature Range
-55 to +150
°
C
T
L
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
Typ.
Max.
Units
R
θ
JC
Thermal Resistance, Junction-to-Case
--
0.5
°
C
/
W
R
θ
JA
Thermal Resistance, Junction-to-Ambient
--
25
°
C
/
W
Applications
AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies.
TO-264
G
C E
G
C
E
G
C
E
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SGL160N60UF Rev. A1
S
G
L160N60UF
©2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 250uA
600
--
--
V
∆
B
VCES
/
∆
T
J
Temperature Coefficient of Breakdown
Voltage
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
°
C
I
CES
Collector Cut-Off Current
V
CE
= V
CES
, V
GE
= 0V
--
--
250
uA
I
GES
G-E Leakage Current
V
GE
= V
GES
, V
CE
= 0V
--
--
± 100
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
I
C
= 80mA, V
CE
= V
GE
3.5
4.5
6.5
V
V
CE(sat)
Collector to Emitter
Saturation Voltage
I
C
= 80A
,
V
GE
= 15V
--
2.1
2.6
V
I
C
= 160A
,
V
GE
= 15V
--
2.6
--
V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
5000
--
pF
C
oes
Output Capacitance
--
600
--
pF
C
res
Reverse Transfer Capacitance
--
200
--
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, I
C
= 80A,
R
G
= 3.9
Ω
, V
GE
=15V
Inductive Load, T
C
= 25
°
C
--
40
--
ns
t
r
Rise Time
--
101
--
ns
t
d(off)
Turn-Off Delay Time
--
90
130
ns
t
f
Fall Time
--
75
150
ns
E
on
Turn-On Switching Loss
--
2500
--
uJ
E
off
Turn-Off Switching Loss
--
1760
--
uJ
E
ts
Total
Switching
Loss
--
4260
5000
uJ
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, I
C
= 80A,
R
G
= 3.9
Ω
, V
GE
= 15V
Inductive Load, T
C
= 125
°
C
--
45
--
ns
t
r
Rise Time
--
105
--
ns
t
d(off)
Turn-Off Delay Time
--
140
200
ns
t
f
Fall Time
--
122
250
ns
E
on
Turn-On Switching Loss
--
2785
--
uJ
E
off
Turn-Off Switching Loss
--
3100
--
uJ
E
ts
Total
Switching
Loss
--
5885
--
uJ
Q
g
Total Gate Charge
V
CE
= 300 V, I
C
= 80A,
V
GE
= 15V
--
345
520
nC
Q
ge
Gate-Emitter Charge
--
60
100
nC
Q
gc
Gate-Collector Charge
--
95
150
nC
L
e
Internal Emitter Inductance
Measured 5mm from PKG
--
18
--
nH
background image
SGL160N60UF Rev. A1
S
G
L160N60UF
©2002 Fairchild Semiconductor Corporation
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
℃
160A
80A
I
C
= 40A
C
o
lle
ct
or
- E
m
itte
r V
o
lta
g
e,
V
CE
[V
]
Gate - Emitter Voltage, V
GE
[V]
0
30
60
90
120
150
0
1
2
3
4
160A
80A
I
C
= 40A
Common Emitter
V
GE
= 15V
Co
llec
to
r -
Em
itte
r Vol
tage
, V
C
E
[V
]
Case Temperature, T
C
[
℃
]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 7. Saturation Voltage vs. V
GE
0
2
4
6
8
0
100
200
300
400
500
20V
12V
15V
V
GE
= 10V
Common Emitter
T
C
= 25
℃
C
ol
le
cto
r
C
ur
re
nt,
I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
0.5
1
10
0
40
80
120
160
200
240
Common Emitter
V
GE
= 15V
T
C
= 25
℃
T
C
= 125
℃
Co
lle
ct
o
r Cu
rr
en
t, I
C
[A
]
Collector - Emitter Voltage, V
CE
[V]
0
20
40
60
80
100
120
0.1
1
10
100
1000
Duty cycle : 50%
T
C
= 100
℃
Power Dissipation = 130W
V
CC
= 300V
Load Current : peak of square wave
Frequency [KHz]
Lo
ad Cu
rr
en
t [
A
]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
℃
160A
80A
I
C
= 40A
C
ol
lec
to
r -
E
m
itte
r V
ol
tag
e
, V
CE
[V
]
Gate - Emitter Voltage, V
GE
[V]
Fig 6. Saturation Voltage vs. V
GE
background image
SGL160N60UF Rev. A1
S
G
L160N60UF
©2002 Fairchild Semiconductor Corporation
1
10
80
30
100
1000
2000
Toff
Tf
Tf
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 80A
T
C
= 25
℃
T
C
= 125
℃
Sw
itc
hi
ng
T
im
e
[n
s]
Gate Resistance, R
G
[
Ω
]
1
10
80
20
100
1000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 80A
T
C
= 25
℃
T
C
= 125
℃
Ton
Tr
S
w
itc
hin
g T
im
e
[n
s]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
1
10
30
0
1000
2000
3000
4000
5000
6000
7000
8000
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
℃
Cap
aci
ta
nc
e [p
F]
Collector - Emitter Voltage, V
CE
[V]
1
10
80
1000
10000
Eoff
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 80A
T
C
= 25
℃
T
C
= 125
℃
S
w
itc
hin
g L
os
s
[u
J]
Gate Resistance, R
G
[
Ω
]
20
40
60
80
100
120
140
160
20
100
1000
Toff
Tf
Toff
Tf
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 3.9
Ω
T
C
= 25
℃
T
C
= 125
℃
S
w
itchi
ng Ti
m
e
[ns]
Collector Current, I
C
[A]
20
40
60
80
100
120
140
160
10
100
500
Ton
Tr
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 3.9
Ω
T
C
= 25
℃
T
C
= 125
℃
S
w
itc
hin
g
T
im
e
[n
s]
Collector Current, I
C
[A]
background image
SGL160N60UF Rev. A1
S
G
L160N60UF
©2002 Fairchild Semiconductor Corporation
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1E-3
0.01
0.1
1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
T
herm
al R
esp
on
se [Z
th
jc]
Rectangular Pulse Duration [sec]
Fig 14. Gate Charge Characteristics
Fig 15. SOA Characteristic
Fig 16. Turn-Off SOA Characteristics
Fig 13. Switching Loss vs. Collector Current
0
50
100
150
200
250
300
350
0
3
6
9
12
15
300 V
200 V
V
CC
= 100 V
Common Emitter
R
L
= 37.5
Ω
T
C
= 25
℃
G
at
e -
E
m
itte
r V
ol
tag
e,
V
G
E
[ V
]
Gate Charge, Q
g
[ nC ]
1
10
100
1000
1
10
100
500
Safe Operating Area
V
GE
=20V, T
C
=100
o
C
C
olle
ct
or
C
urre
nt
, I
C
[A
]
Collector-Emitter Voltage, V
CE
[V]
Fig 17. Transient Thermal Impedance of IGBT
0.3
1
10
100
1000
0.1
1
10
100
1000
Single Nonrepetitive
Pulse T
C
= 25
℃
Curves must be derated
linearly with increase
in temperature
50us
100us
1
㎳
DC Operation
I
C
MAX. (Continuous)
I
C
MAX. (Pulsed)
Col
le
ct
or
Cu
rr
en
t, I
C
[A
]
Collector-Emitter Voltage, V
CE
[V]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
20
40
60
80
100
120
140
160
100
1000
10000
20000
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
R
G
= 3.9
Ω
T
C
= 25
℃
T
C
= 125
℃
Sw
itc
hi
ng L
o
ss
[u
J]
Collector Current, I
C
[A]
background image
©2002 Fairchild Semiconductor Corporation
SGL160N60UF Rev. A1
S
G
L160N60UF
Package Dimension
5.45TYP
[5.45
±
0.30
]
5.45TYP
[5.45
±
0.30
]
4.90
±
0.20
20.00
±
0.20
(8.30)
(8.30)
(1.00)
(0.50)
(2.00)
(7.00)
(R1.00)
(R2.00)
ø3.30
±
0.20
(7.00)
(1.50)
(1.50)
(1.50)
2.50
±
0.20
3.00
±
0.20
2.80
±
0.30
1.00
+0.25
–0.10
0.60
+0.25
–0.10
1.50
±
0.20
6.00
±
0.20
20.00
±