4/10/03
Page 1 of 9
© 2002 Fairchild Semiconductor Corporation
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
MOC216-M
MOC217-M
DESCRIPTION
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a
monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic
package. They are ideally suited for high density applications, and eliminate the need for
through–the–board mounting.
FEATURES
•
UL Recognized (File #E90700, Volume 2)
•
VDE Recognized (File #13616) (add option “V” for VDE approval, i.e., MOC215V-M)
•
Convenient Plastic SOIC–8 Surface Mountable Package Style
•
Low LED Input Current Required, for Easier Logic Interfacing
•
Standard SOIC–8 Footprint, with 0.050” Lead Spacing
•
Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
•
High Input–Output Isolation of 2500 Vac (rms) Guaranteed
APPLICATIONS
•
Low power Logic Circuits
•
Interfacing and coupling systems of different potentials and impedances
•
Telecommunications equipment
•
Portable electronics
Marking Information:
•
MOC215-M = 215
•
MOC216-M = 216
•
MOC217-M = 217
BASE
N/C
ANODE
CATHODE
1
2
3
4
5
6
7
8
EMITTER
COLLECTOR
N/C
N/C
4/10/03
Page 2 of 9
© 2002 Fairchild Semiconductor Corporation
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
MOC216-M
MOC217-M
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C Unless otherwise specified)
Rating
Symbol
Value
Unit
EMITTER
Forward Current - Continuous
I
F
60
mA
Forward Current - Peak (PW = 100 µs, 120 pps)
I
F
(pk)
1.0
A
Reverse Voltage
V
R
6.0
V
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
90
0.8
mW
mW/°C
DETECTOR
Collector-Emitter Voltage
V
CEO
30
V
Collector-Base Voltage
V
CBO
70
V
Emitter-Collector Voltage
V
ECO
7.0
V
Collector Current-Continuous
I
C
150
mA
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
150
1.76
mW
mW/°C
TOTAL DEVICE
Input-Output Isolation Voltage
(1,2)
(60 Hz, 1 minute duration)
V
ISO
2500
Vac(rms)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
250
2.94
mW
mW/°C
Ambient Operating Temperature Range
T
A
-40 to +100
°C
Storage Temperature Range
T
stg
-40 to +125
°C
4/10/03
Page 3 of 9
© 2002 Fairchild Semiconductor Corporation
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
MOC216-M
MOC217-M
** Typical values at T
A
= 25°C unless otherwise noted.
1. Input-Output Isolation Surge Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
ISO
rating of 2,500 V
AC(RMS)
for t = 1 minute is equivalent to a rating of 3,000 V
AC(RMS)
for t = 1 second.
4. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified)
Characteristic
Symbol
Min
Typ**
Max
Unit
EMITTER
Forward Voltage
(I
F
= 1.0 mA)
V
F
—
1.07
1.3
V
Reverse Leakage Current
(V
R
= 6.0 V)
I
R
—
0.001
100
µA
Capacitance
C
—
18
—
pF
DETECTOR
Collector-Emitter Dark Current
(V
CE
= 5.0 V, T
A
= 25°C)
I
CEO
—
1.0
50
nA
(V
CE
= 5.0 V, T
A
= 100°C)
—
1.0
—
µA
Collector-Emitter Breakdown Voltage
(I
C
= 100 µA)
BV
CEO
30
100
—
V
Emitter-Collector Breakdown Voltage
(I
E
= 100 µA)
BV
ECO
7.0
10
—
V
Collector-Emitter Capacitance
(f = 1.0 MHz, V
CE
= 0)
C
CE
—
7.0
—
pF
COUPLED
Output Collector Current
(4)
MOC215-M
MOC216-M
MOC217-M
(I
F
= 1.0 mA, V
CE
= 5.0 V)
CTR
20
50
100
—
—
—
—
—
—
%
Collector-Emitter Saturation Voltage
(I
C
= 100µA, I
F
= 1.0mA)
V
CE(sat)
—
—
0.4
V
Turn-On Time
(I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
, fig. 10)
t
on
—
4.0
—
µs
Turn-Off Time
(I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
, fig. 10)
t
off
—
4.0
—
µs
Rise Time
(I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
, fig. 10)
t
r
—
3.0
—
µs
Fall Time
(I
C
= 2.0 mA, V
CC
= 10 V,
R
L
= 100
Ω
, fig. 10)
t
f
—
3.0
—
µs
Input-Output Isolation Voltage
(1,2,3)
(f = 60 Hz, t = 1.0 min.)
V
ISO
2500
—
—
Vac(rms)
Isolation Resistance
(2)
(V
I-O
= 500 V)
R
ISO
10
11
—
—
Ω
Isolation Capacitance
(2)
(V
I-O
= 0, f = 1.0 MHz)
C
ISO
—
0.2
—
pF
4/10/03
Page 4 of 9
© 2002 Fairchild Semiconductor Corporation
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
MOC216-M
MOC217-M
Fig. 2 Output Curent vs. Input Current
I
F
- LED INPUT CURRENT (mA)
0.1
1
10
100
I
C
- OU
T
P
U
T
C
O
L
L
EC
T
O
R
CU
R
R
E
N
T
(
N
O
R
M
A
L
IZ
E
D
)
0.01
0.1
1
10
V
CE
= 5V
NORMALIZED TO I
F
= 10mA
Fig. 3 Output Current vs. Ambient Temperature
T
A
- AMBIENT TEMPERATURE (
o
C)
-80
-60
-40
-20
0
20
40
60
80
100
120
I
C
- OU
T
P
U
T
C
O
L
L
EC
T
O
R
CU
R
R
E
N
T (
N
O
R
M
A
L
IZE
D
)
0.1
1
10
NORMALIZED TO T
A
= 25
o
C
Fig. 4 Output Current vs. Collector - Emitter Voltage
V
CE
- COLLECTOR -EMITTER VOLTAGE (V)
0
1
2
3
4
5
6
7
8
9
10
I
C
- O
U
T
P
U
T
C
O
L
L
EC
TO
R
CU
R
R
E
N
T
(
N
OR
M
A
L
IZ
E
D
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4.0
3.5
I
F
= 10mA
NORMALIZED TO V
CE
= 5V
Fig. 5 Dark Current vs. Ambient Temperature
Fig. 6 Normalized t
on
vs. R
BE
0
20
40
60
80
100
0.01
0.1
1
10
100
I
CE
O
- C
O
L
L
E
C
T
O
R
-E
MI
T
T
E
R
DA
R
K
CU
RR
E
N
T
(
n
A
)
NORMALIZED t
on
0.1
1
10
100
1000
10000
V
CE
=10V
I
F
- LED FORWARD CURRENT (mA)
V
F
- FOR
W
ARD
V
O
LT
A
GE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
1
10
100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
T
A
= 55
°C
T
A
= 25
°C
T
A
= 100
°C
V
CC
= 10V
I
C
= 2mA
R
L
= 100
Ω
Normalized to:
t
on
at R
BE
= Open
4/10/03
Page 5 of 9
© 2002 Fairchild Semiconductor Corporation
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
MOC216-M
MOC217-M
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1.0
0.8
0.9
I
F
= 20mA
I
F
= 10mA
I
F
= 5mA
Fig. 8 CTR vs. R
BE
(Saturated)
R
BE
- BASE RESISTANCE (k
Ω)
10
100
1000
NORMALIZED CTR
V
CE
= 0.3V, TA = 25
°C
Normalized to:
CTR at R
BE
= Open
0.0
0.2
0.4
0.6
1.0
1.2
1.4
1.6
0.8
Fig. 7 Normalized t
off
vs. R
BE
R
BE
- BASE RESISTANCE (M
Ω)
0.01
0.1
1
10
100
NORMALIZED t
off
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1.0
0.8
0.9
I
F
= 20mA
I
F
= 10mA
I
F
= 5mA
Fig. 9 CTR vs. R
BE
(Unsaturated)
R
BE
- BASE RESISTANCE (k
Ω)
10
100
1000
NORMALIZED CTR
V
CE
= 5V, TA = 25
°C
Normalized to:
CTR at R
BE
= Open
V
CC
= 10V
I
C
= 2mA
R
L
= 100
Ω
Normalized to:
t
off
at R
BE
= Open
4/10/03
Page 6 of 9
© 2002 Fairchild Semiconductor Corporation
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
MOC216-M
MOC217-M
Figure 10. Switching Time Test Circuit and Waveforms
OUTPUT PULSE
INPUT PULSE
TEST CIRCUIT
WAVE FORMS
t
r
t
f
INPUT
I
F
R
L
R
BE
V
CC
= 10V
OUTPUT
t
on
10%
90%
t
off
I
C
Adjust I
F
to produce I
C
= 2 mA
Package Dimensions (Surface Mount)
8-Pin Small Outline
Lead Coplanarity : 0.004 (0.10) MAX
0.202 (5.13)
0.182 (4.63)
0.021 (0.53)
0.011 (0.28)
0.050 (1.27)
TYP
0.164 (4.16)
0.144 (3.66)
0.244 (6.19)
0.224 (5.69)
0.143 (3.63)
0.123 (3.13)
0.008 (0.20)
0.003 (0.08)
0.010 (0.25)
0.006 (0.16)
SEATING PLANE
0.024 (0.61)
0.050 (1.27)
0.155 (3.94)
0.275 (6.99)
0.060 (1.52)
4/10/03
Page 7 of 9
© 2002 Fairchild Semiconductor Corporation
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
MOC216-M
MOC217-M
ORDERING INFORMATION
MARKING INFORMATION
Option
Order
Entry
Identifier
Description
V
V
VDE 0084
R1
R1
Tape and reel (500 units per reel)
R1V
R1V
VDE 0884, Tape and reel (500 units per reel)
R2
R2
Tape and reel (2500 units per reel)
R2V
R2V
VDE 0884, Tape and reel (2500 units per reel)
1
2
6
4
3
5
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
One digit year code, e.g., ‘3’
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
215
S
YY
X
V
4/10/03
Page 8 of 9
© 2002 Fairchild Semiconductor Corporation
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLERS
MOC215-M
MOC216-M
MOC217-M
Carrier Tape Specifications
Reflow Profile
4.0
± 0.10
Ø1.5 MIN
User Direction of Feed
2.0
± 0.05
1.75
± 0.10
5.5
± 0.05
12.0
± 0.3
8.0
± 0.10
0.30 MAX
8.3
± 0.10
3.50
± 0.20
0.1 MAX
6.40
± 0.20
5.20
± 0.20
Ø1.5
± 0.1/-0
Ramp up = 2–10
°C/sec
• Peak reflow temperature: 245
°C (package surface temperature)
• Time of temperature higher than 183
°C for 120–180 seconds
• One time soldering reflow is recommended
230
°C, 10–30 s
Time (Minute)
0
300
250
200
150
100
50
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
T
emperature (
°C)
Time above 183
°C, 120–180 sec
245
°C peak
4/10/03
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
DISCLAIMER