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©2002 Fairchild Semiconductor Corporation
May 2002
ISL9R30120G2 Rev. A
IS
L9R30120
G2
ISL9R30120G2
30A, 1200V Stealth™
Diode
General Description
The ISL9R30120G2 is a Stealth™ diode optimized for low loss
performance in high frequency hard switched applications. The
Stealth™ family exhibits low reverse recovery current
(I
RM(REC)
) and exceptionally soft recovery under typical
operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low I
RM(REC)
and short t
a
phase reduce loss
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49415
.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . t
b
/ t
a
> 4.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
rr
< 56ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
•
Snubber Diode
Device Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
RRM
Repetitive Peak Reverse Voltage
1200
V
V
RWM
Working Peak Reverse Voltage
1200
V
V
R
DC Blocking Voltage
1200
V
I
F(AV)
Average Rectified Forward Current (T
C
= 80
o
C)
30
A
I
FRM
Repetitive Peak Surge Current (20kHz Square Wave)
70
A
I
FSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
325
A
P
D
Power Dissipation
166
W
E
AVL
Avalanche Energy (1A, 40mH)
20
mJ
T
J
, T
STG
Operating and Storage Temperature Range
-55 to 150
°C
T
L
T
PKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
300
260
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
K
A
CATHODE
(BOTTOM SIDE
CATHODE
ANODE
METAL)
JEDEC STYLE 2 LEAD TO-247
Package
Symbol
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©2002 Fairchild Semiconductor Corporation
ISL9R30120G2 Rev. A
IS
L9R30120
G2
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking
Device
Package
Tape Width
Quantity
R30120G2
ISL9R30120G2
TO-247
N/A
30
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
R
Instantaneous Reverse Current
V
R
= 1200V
T
C
= 25°C
-
-
100
µA
T
C
= 125°C
-
-
1.0
mA
V
F
Instantaneous Forward Voltage
I
F
= 30A
T
C
= 25°C
-
2.8
3.3
V
T
C
= 125°C
-
2.6
3.1
V
C
J
Junction Capacitance
V
R
= 10V, I
F
= 0A
-
115
-
pF
t
rr
Reverse Recovery Time
I
F
= 1A, dI
F
/dt = 100A/µs, V
R
= 15V
-
45
56
ns
I
F
= 30A, dI
F
/dt = 100A/µs, V
R
= 15V
-
80
100
ns
t
rr
Reverse Recovery Time
I
F
= 30A,
dI
F
/dt = 200A/µs,
V
R
= 780V, T
C
= 25°C
-
269
-
ns
I
RM(REC)
Maximum Reverse Recovery Current
-
7.5
-
A
Q
RR
Reverse Recovered Charge
-
930
-
nC
t
rr
Reverse Recovery Time
I
F
= 30A,
dI
F
/dt = 200A/µs,
V
R
= 780V,
T
C
= 125°C
-
529
-
ns
S
Softness Factor (t
b
/t
a
)
-
6.2
-
-
I
RM(REC)
Maximum Reverse Recovery Current
-
11
-
A
Q
RR
Reverse Recovered Charge
-
3.0
-
µC
t
rr
Reverse Recovery Time
I
F
= 30A,
dI
F
/dt = 1000A/µs,
V
R
= 780V,
T
C
= 125°C
-
260
-
ns
S
Softness Factor (t
b
/t
a
)
-
4.8
-
-
I
RM(REC)
Maximum Reverse Recovery Current
-
30
-
A
Q
RR
Reverse Recovered Charge
-
3.4
-
µC
dI
M
/dt
Maximum di/dt during t
b
-
520
-
A/µs
R
θ
JC
Thermal Resistance Junction to Case
TO-247
-
-
0.75
°C/W
R
θ
JA
Thermal Resistance Junction to Ambient TO-247
-
-
30
°C/W
background image
©2002 Fairchild Semiconductor Corporation
ISL9R30120G2 Rev. A
IS
L9R30120
G2
Typical Performance Curves
Figure 1. Forward Current vs Forward Voltage
Figure 2. Reverse Current vs Reverse Voltage
Figure 3. t
a
and t
b
Curves vs Forward Current
Figure 4. t
a
and t
b
Curves vs dI
F
/dt
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
Figure 6. Maximum Reverse Recovery Current vs
dI
F
/dt
0
10
20
30
40
50
60
0.5
1
1.5
2
2.5
3
3.5
V
F
, FORWARD VOLTAGE (V)
I
F
, F
O
R
W
ARD
CUR
RENT
(
A
)
150
o
C
125
o
C
100
o
C
25
o
C
4
V
R
, REVERSE VOLTAGE (KV)
I
R
, REVE
RSE CURR
ENT
(
µ
A)
0.01
0.1
1
10
100
1000
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
125
o
C
100
o
C
75
o
C
25
o
C
150
o
C
0
125
250
375
500
625
750
0
10
20
30
40
50
60
I
F
, FORWARD CURRENT (A)
t,
RECO
VER
Y T
IM
E
S (
n
s
)
t
b
at dI
F
/dt = 200A/µs, 500A/µs, 800A/µs
t
a
at dI
F
/dt = 200A/µs, 500A/µs, 800A/µs
V
R
= 780V, T
C
= 125
o
C
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
t,
RE
CO
VE
R
Y
TI
M
ES (
n
s
)
t
b
at I
F
= 60A, 30A, 15A
V
R
= 780V, T
C
= 125
o
C
0
125
250
375
500
625
750
200
400
600
800
1000
1200
t
a
at I
F
= 60A, 30A, 15A
I
F
, FORWARD CURRENT (A)
dI
F
/dt = 800A/µs
dI
F
/dt = 500A/µs
0
10
20
30
40
0
10
20
30
40
50
60
dI
F
/dt = 200A/µs
V
R
= 780V, T
C
= 125
o
C
I
RM
(R
EC
)
,
M
A
X RE
VER
SE REC
O
VE
R
Y
C
URRENT
(
A
)
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
I
F
= 60A
I
F
= 15A
I
R
M(R
E
C
)
, M
A
X RE
VERS
E
RECO
VER
Y CURRE
NT
(
A
)
I
F
= 30A
10
25
30
35
40
200
400
600
800
1000
1200
20
15
V
R
= 780V, T
C
= 125
o
C
background image
©2002 Fairchild Semiconductor Corporation
ISL9R30120G2 Rev. A
IS
L9R30120
G2
Figure 7. Reverse Recovery Softness Factor vs
dI
F
/dt
Figure 8. Reverse Recovery Charge vs dI
F
/dt
Figure 9. Junction Capacitance vs Reverse Voltage
Figure 10. Maximum Reverse Recovery Current
and t
rr
vs Case
Temperature
Figure 11.
DC CURRENT DERATING CURVE
Typical Performance Curves
(Continued)
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
S
,
R
EVE
RSE RE
CO
VE
R
Y
SO
FT
NES
S
F
A
CT
O
R
3
4
5
6
7
8
9
200
400
600
800
1000
1200
V
R
= 780V, T
C
= 125
o
C
I
F
= 15A
I
F
= 30A
I
F
= 60A
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.6
200
400
600
800
1000
1200
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Q
RR
, RE
VERS
E
RECO
VE
RED CHARGE (
µ
C)
V
R
= 780V, T
C
= 125
o
C
6.0
I
F
= 15A
I
F
= 30A
I
F
= 60A
V
R
, REVERSE VOLTAGE (V)
C
J
, J
UNCT
IO
N CAP
A
C
IT
ANCE (
p
F
)
0
200
400
600
800
1000
1200
0.1
1
10
100
0.03
1400
1600
f = 1MH
Z
t,
REC
O
VE
R
Y
T
IM
E
S (
n
s
)
-22
-20
-18
-16
-14
25
50
75
100
125
150
200
250
300
350
400
I
F
= 30A, V
R
= 780V, dI
F
/dt = 500A/µs
T
C
, CASE TEMPERATURE (
o
C)
I
R
M(R
E
C
)
, M
A
X
REVE
RSE
RE
CO
V
E
R
Y
CURRENT
(
A
)
I
RM(REC)
t
RR
5
0
100
110
130
80
150
120
10
15
20
T
C
, CASE TEMPERATURE (
o
C)
I
F(A
V
)
, A
VERA
GE F
O
R
W
ARD CURR
ENT (A
)
140
90
70
60
35
30
25
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©2002 Fairchild Semiconductor Corporation
ISL9R30120G2 Rev. A
IS
L9R30120
G2
Figure 12. Normalized Maximum Transient Thermal Impedance
Typical Performance Curves
(Continued)
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-2
10
-1
Z
θ
JA
,
NO
RMALI
Z
E
D
THE
R
M
A
L I
M
P
E
D
A
NC
E
0.01
10
-4
10
-3
SINGLE PULSE
10
0
0.1
10
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
1.0
Test Circuit and Waveforms
Figure 13. t
rr
Test Circuit
Figure 14. t
rr
Waveforms and Definitions
Figure 15. Avalanche Energy Test Circuit
Figure 16. Avalanche Current and Voltage
Waveforms
R
G
L
V
DD
MOSFET
CURRENT
SENSE
DUT
V
GE
t
1
t
2
V
GE
AMPLITUDE AND
t
1 AND
t
2
CONTROL I
F
R
G
CONTROL dI
F
/dt
+
-
dt
dI
F
I
F
trr
ta
tb
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
L
R
V
DD
R < 0.1
Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
V
DD
Q
1
I = 1A
L = 40mH
V
DD
= 50V
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
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effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
MICROWIRE™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I
2
C™