NPN Low Saturation Transistor
FPN560
FPN560A
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
These devices are designed for high current gain and low
saturation voltage with collector currents up to 3.0 A continuous.
Sourced from Process NA.
Symbol
Characteristic
Max
Units
FPN560 / FPN560A
P
D
Total Device Dissipation
1.0
W
R
θ
JC
Thermal Resistance, Junction to Case
50
°
C/W
R
θ
JA
Thermal Resistance, Junction to Ambient
125
°
C/W
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
60
V
V
CBO
Collector-Base Voltage
80
V
V
EBO
Emitter-Base Voltage
5.0
V
I
C
Collector Current
- Continuous
3.0
A
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
TO-226
C
B
E
1999 Fairchild Semiconductor Corporation
FPN560 / FPN560A
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
BV
CEO
Collector-Emitter Breakdown
Voltage
I
C
= 10 mA, I
B
= 0
60
V
BV
CBO
Collector-Base Breakdown Voltage
I
C
= 100
µ
A, I
E
= 0
80
V
BV
EBO
Emitter-Base Breakdown Voltage
I
E
= 100
µ
A, I
C
= 0
5.0
V
I
CBO
Collector Cutoff Current
V
CB
= 30 V, I
E
= 0
V
CB
= 30 V, I
E
= 0, T
A
= 100
°
C
100
10
nA
µ
A
I
EBO
Emitter Cutoff Current
V
EB
= 4.0 V, I
C
= 0
100
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 100 mA, V
CE
= 2.0 V
I
C
= 500 mA, V
CE
= 2.0 V
560
560A
I
C
= 1.0 A, V
CE
= 2.0 V
I
C
= 2.0 A, V
CE
= 2.0 V
70
100
250
80
40
300
550
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 1.0 A, I
B
= 100 mA
I
C
= 2.0 A, I
B
= 200 mA
560
560A
300
350
300
mV
mV
mV
V
BE(
sat
)
Base-Emitter Saturation Voltage
I
C
= 1.0 A, I
B
= 100 mA
1.25
V
V
BE(
on
)
Base-Emitter Saturation Voltage
I
C
= 1.0 A, V
CE
= 2.0 V
1.0
V
SMALL SIGNAL CHARACTERISTICS
C
obo
Output Capacitance
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
30
pF
F
T
Transition Frequency
I
C
= 100 mA, V
CE
= 5.0 V,
f = 100 MHz
75
MHz
*
Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%
FPN560 / FPN560A
NPN Low Saturation Transistor
(continued)
Typical Characteristics
Base-Emitter Saturation
Voltage vs Collector Current
0.001
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR CURRENT (A)
V
-B
A
S
E-
EM
IT
TE
R
SA
TUR
A
T
IO
N
V
O
L
T
AG
E(
V)
C
BE
S
A
T
25 °C
- 40 °C
125 °C
β = 10
Base-Emitter On Voltage vs.
Collector Current
0.0001
0.001
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR CURRENT (A)
V
-
B
A
SE
-E
M
IT
T
E
R
ON
V
O
L
T
AG
E (
V
)
C
BE
O
N
25 °C
- 40 °C
125 °C
V = 2.0V
ce
Input/Output Capacitance vs.
Reverse Bias Voltage
0.1
0.2
0.5
1
2
5
10
20
50
100
0
50
100
150
200
250
300
350
400
450
V - COLLECTOR VOLTAGE (V)
CA
P
A
CI
T
A
N
C
E
(
p
f)
CE
f = 1.0 MHz
C
ibo
C
obo
Current Gain vs. Collector Current
0.0001
0.001
0.01
0.1
1
2
5
0
100
200
300
400
500
I - COLLECTOR CURRENT (A)
H
-
C
U
R
R
E
N
T
GA
IN
C
FE
25°C
125°C
- 40°C
V = 2.0V
ce
Collector-Emitter Saturation
Voltage vs Collector Current
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
I - COLLECTOR CURRENT (A)
V
-
CO
LL
EC
TO
R-
EM
IT
T
E
R VO
L
T
A
G
E
(
V
)
C
CE
S
A
T
- 40°C
25°C
125°C
β = 10
Power Dissipation vs
Ambient Temperat ure
0
25
50
75
100
125
150
0
0.25
0.5
0.75
1
TE MPE RATURE ( C)
P
-
P
O
W
E
R
D
ISS
IP
A
T
IO
N
(
W
)
°
D
TO-226
FPN560 / FPN560A
NPN Low Saturation Transistor
(continued)
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Definition
Advance Information
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No Identification Needed
Obsolete
This datasheet contains the design specifications for
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any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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any time without notice in order to improve design.
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In Design
First Production
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