Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6345
2SK3293
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60800TS (KOTO) TA-2737 No.6345–1/4
4.5
1.6
0.5
0.4
1.5
1.0
2.5
4.25max
3.0
1.5
0.4
0.75
3
2
1
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Package Dimensions
unit:mm
2062A
[2SK3293]
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
Tc=25˚C
Marking : KZ
Continued on next page.
Mounted on a ceramic board (250mm
2
×
0.8mm)
PW
≤
10
µ
s, duty cycle
≤
1%
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2SK3293
No.6345–2/4
Switching Time Test Circuit
PW=10
µ
s
D.C.
≤
1%
10V
0V
P.G
50
Ω
G
S
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ID=1.5A
RL=20
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VDD=30V
VOUT
2SK3293
VIN
VIN
Continued from preceding page.
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25
°
C
--25
°
C
0
0.5
1.0
1.5
2.0
2.5
3.0
ID -- VGS
6
5
4
3
2
1
0
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VDS=10V
ID -- VDS
6.0V
8.0V
3.5V
Tc=75
°
C
IT01457
IT01458
Tc=25
°
C
0
2
4
6
8
10
12
14
16
18
RDS(on) -- VGS
250
200
150
100
50
0
20
IT01459
I D
=1.0A, V
GS
=4V
I D=1.5A, V
GS
=10V
--60
--40
--20
0
20
40
60
80
100
120
RDS(on) -- Tc
300
250
200
150
100
50
0
160
140
IT01460
4.0V
5.0V
10.0V
3.0V
VGS=2.5V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
ID=1.5A
1.0A
Drain Current, I
D
–A
Drain Current, I
D
–A
Drain-to-Source Voltage, VDS – V
Gate-to-Source Voltage, VGS – V
Gate-to-Source Voltage, VGS – V
Static Drain-to-Source
On-State Resistance, R
DS
(on)
–
m
Ω
Static Drain-to-Source
On-State Resistance, R
DS
(on)
–
m
Ω
Case Temperature, Tc –
°
C
