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August 2002
MJD122-1 / MJD122T4
MJD127-1 / MJD127T4
COMPLEMENTARY POWER
DARLINGTON TRANSISTORS
s
STMicroelectronics PREFERRED SALESTYPES
s
LOW BASE-DRIVE REQUIREMENTS
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
s
THROUGH HOLE TO-251 (IPAK)
POWER PACKAGE IN TUBE (SUFFIX “-1”)
s
SURFACE MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4”)
s
ELECTRICALLY SIMILAR TO TIP122 AND
TIP127
APPLICATIONS:
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD122 and MJD127 form complementary
NPN - PNP pair. They are manufactured using
Epi taxial Bas e technology for cost-eff ective
performance.
ABSOLUTE MAXIMUM RATINGS
For PNP types voltage and current values are negative.
Ordering
Code
Marking
Package
Shipment
MJD122T4
MJD122-1
MJD127T4
MJD127-1
MJD122
MJD122
MJD127
MJD127
TO-252 (DPAK)
TO-251 (IPAK)
TO-252 (DPAK)
TO-251 (IPAK)
Tape & Reel
Tube
Tape & Reel
Tube
Symbol
Parameter
Value
Unit
NPN
MJD122
PNP
MJD127
V
CBO
Collector-Base Voltage (I
E
= 0)
100
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
100
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
5
A
I
CM
Collector Peak Current (t
p
< 5 ms)
8
A
I
B
Base Current
0.1
A
P
tot
Total Dissipation at T
c
= 25
°
C
20
W
T
stg
Storage Temperature
–65 to 150
°
C
T
j
Max. Operating Junction Temperature
150
°
C
3
2
1
1
3
TO-252
DPAK
(Suffix ”T4”)
TO-251
IPAK
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ. = 10 K
Ω
R
2
Typ. = 150
Ω
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MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
j
= 25
°
C unless otherwise specified)
* Pulsed: Pulse duration = 300
µ
s, duty cycle
≤
2 %.
For PNP types voltage and current values are negative.
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
6.25
100
°
C/W
°
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 100 V
10
µ
A
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 50 V
10
µ
A
I
CEX
Collector Cut-off
Current (V
BE
= -1.5 V)
V
CE
= 100 V
V
CE
= 100 V
T
j
= 125
°
C
10
500
µ
A
µ
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
2
mA
V
CEO(sus)
*
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 30 mA
100
V
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
I
C
= 4 A
I
C
= 8 A
I
B
= 16 mA
I
B
= 80 mA
2
4
V
V
V
BE(sat)
*
Base-Emitter
Saturation Voltage
I
C
= 8 A
I
B
= 80 mA
4.5
V
V
BE(on)
*
Base-Emitter On
Voltage
I
C
= 4 A
V
CE
= 4 V
2.8
V
h
FE
*
DC Current Gain
I
C
= 4 A
I
C
= 8 A
V
CE
= 4 V
V
CE
= 4 V
1000
100
12000
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MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
Base-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
Collector-Emitter Saturation Voltage (NPN type)
Safe Operating Area
Derating Curve
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MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
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Switching Times Resistive Load (NPN type)
Switching Times Resistive Load (PNP type)
DC Current Gain (PNP type)
Base-Emitter On Voltage (NPN type)
DC Current Gain (NPN type)
Base-Emitter On Voltage (PNP type)
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MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
Freewheel Diode Forward Voltage (NPN type)
Freewheel Diode Forward Voltage (PNP type)
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MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
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DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A3
0.70
1.30
0.028
0.051
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
B3
0.85
0.033
B5
0.30
0.012
B6
0.95
0.037
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.237
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
15.90
16.30
0.626
0.642
L
9.00
9.40
0.354
0.370
L1
0.80
1.20
0.031
0.047
L2
0.80
1.00
0.031
0.039
V1
10
o
10
o
P032N_E
TO-251 (IPAK) MECHANICAL DATA
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MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0
o
8
o
0
o
0
o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
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MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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