background image
DATA SHEET
Product specification
Supersedes data of 1999 May 17
2001 Feb 09
DISCRETE SEMICONDUCTORS
PMBZ5226B to PMBZ5257B
Voltage regulator diodes
book, halfpage
M3D088
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2001 Feb 09
2
Philips Semiconductors
Product specification
Voltage regulator diodes
PMBZ5226B to PMBZ5257B
FEATURES
Total power dissipation:
max. 250 mW
Tolerance series:
±
5%
Working voltage range:
nom. 3.3 to 33 V
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
General regulation functions.
DESCRIPTION
Low-power voltage regulator diodes
in small SOT23 plastic SMD
packages.
The series consists of 32 types with
nominal working voltages from
3.3 to 33 V.
PINNING
PIN
DESCRIPTION
1
anode
2
not connected
3
cathode
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
MAM243
2
n.c.
1
3
2
1
3
Top view
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE
NUMBER
MARKING
CODE
(1)
TYPE
NUMBER
MARKING
CODE
(1)
TYPE
NUMBER
MARKING
CODE
(1)
TYPE
NUMBER
MARKING
CODE
PMBZ5226B
8A
PMBZ5234B
8J
PMBZ5242B
8S
PMBZ5250B
81A
PMBZ5227B
8B
PMBZ5235B
8K
PMBZ5243B
8T
PMBZ5251B
81B
PMBZ5228B
8C
PMBZ5236B
8L
PMBZ5244B
8U
PMBZ5252B
81C
PMBZ5229B
8D
PMBZ5237B
8M
PMBZ5245B
8V
PMBZ5253B
81D
PMBZ5230B
8E
PMBZ5238B
8N
PMBZ5246B
8W
PMBZ5254B
81E
PMBZ5231B
8F
PMBZ5239B
8P
PMBZ5247B
8X
PMBZ5255B
81F
PMBZ5232B
8G
PMBZ5240B
8Q
PMBZ5248B
8Y
PMBZ5256B
81G
PMBZ5233B
8H
PMBZ5241B
8R
PMBZ5249B
8Z
PMBZ5257B
81H
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2001 Feb 09
3
Philips Semiconductors
Product specification
Voltage regulator diodes
PMBZ5226B to PMBZ5257B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a ceramic substrate of 8
×
10
×
0.7 mm.
2. Device mounted on an FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
F
continuous forward current
200
mA
I
ZSM
non-repetitive peak reverse current
t
p
= 100
µ
s; square wave;
T
j
= 25
°
C prior to surge
see Table
“Per type”
P
tot
total power dissipation
T
amb
= 25
°
C; note 1
300
mW
T
amb
= 25
°
C; note 2
250
mW
P
ZSM
non-repetitive peak reverse power
dissipation
t
p
= 100
µ
s; square wave;
T
j
= 25
°
C prior to surge; see Fig.2
40
W
T
stg
storage temperature
65
+150
°
C
T
j
junction temperature
150
°
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 200 mA; see Fig.3
1.1
V
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2001
Feb
09
4
Philips Semiconductors
Product specification
V
oltage regulator diodes
PMBZ5226B to PMBZ5257B
Per type
T
j
= 25
°
C unless otherwise specified.
TYPE No.
WORKING
VOLTAGE
V
Z
(V)
(1)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(
)
at I
Z
= 0.25 mA
TEMP. COEFF.
S
Z
(%/K)
at I
Z
(2)
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
REVERSE CURRENT at
REVERSE VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 100
µ
s;
T
amb
= 25
°
C
I
R
(
µ
A)
V
R
(V)
NOM.
MAX.
TYP.
MAX.
MAX.
MAX.
PMBZ5226B
3.3
1600
0.064
20
450
25
1.0
6.0
PMBZ5227B
3.6
1700
0.065
20
450
15
1.0
6.0
PMBZ5228B
3.9
1900
0.063
20
450
10
1.0
6.0
PMBZ5229B
4.3
2000
0.058
20
450
5
1.0
6.0
PMBZ5230B
4.7
2000
0.047
20
450
5
1.0
6.0
PMBZ5231B
5.1
2000
0.013
20
300
5
2.0
6.0
PMBZ5232B
5.6
1600
+0.023
20
300
5
3.0
6.0
PMBZ5233B
6.0
1600
+0.023
20
300
5
3.5
6.0
PMBZ5234B
6.2
1000
+0.039
20
200
5
4.0
6.0
PMBZ5235B
6.8
750
+0.040
20
200
3
5.0
6.0
PMBZ5236B
7.5
500
+0.047
20
150
3
6.0
4.0
PMBZ5237B
8.2
500
+0.052
20
150
3
6.5
4.0
PMBZ5238B
8.7
600
+0.053
20
150
3
6.5
3.5
PMBZ5239B
9.1
600
+0.055
20
150
3
7.0
3.0
PMBZ5240B
10
600
+0.055
20
90
3
8.0
3.0
PMBZ5241B
11
600
+0.058
20
85
2
8.4
2.5
PMBZ5242B
12
600
+0.062
20
85
1
9.1
2.5
PMBZ5243B
13
600
+0.065
9.5
80
0.5
9.9
2.5
PMBZ5244B
14
600
+0.067
9.0
80
0.1
10
2.0
PMBZ5245B
15
600
+0.073
8.5
75
0.1
11
2.0
PMBZ5246B
16
600
+0.073
7.8
75
0.1
12
1.5
PMBZ5247B
17
600
+0.073
7.4
75
0.1
13
1.5
PMBZ5248B
18
600
+0.078
7.0
70
0.1
14
1.5
PMBZ5249B
19
600
+0.078
6.6
70
0.1
14
1.5
PMBZ5250B
20
600
+0.080
6.2
60
0.1
15
1.5
PMBZ5251B
22
600
+0.080
5.6
60
0.1
17
1.25
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2001
Feb
09
5
Philips Semiconductors
Product specification
V
oltage regulator diodes
PMBZ5226B to PMBZ5257B
Notes
1. V
Z
is measured with device at thermal equilibrium while mounted on a ceramic substrate of 8
×
10
×
0.7 mm.
2. For types PMBZ5226B to PMBZ5242B the I
Z
current is 7.5 mA; for PMBZ5243B and higher I
Z
= I
Ztest
. S
Z
values valid between 25
°
C and 125
°
C.
PMBZ5252B
24
600
+0.081
5.2
55
0.1
18
1.25
PMBZ5253B
25
600
+0.082
5.0
55
0.1
19
1.25
PMBZ5254B
27
600
+0.085
4.6
50
0.1
21
1.0
PMBZ5255B
28
600
+0.085
4.5
50
0.1
21
1.0
PMBZ5256B
30
600
+0.085
4.2
50
0.1
23
1.0
PMBZ5257B
33
700
+0.085
3.8
45
0.1
25
0.9
TYPE No.
WORKING
VOLTAGE
V
Z
(V)
(1)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(
)
at I
Z
= 0.25 mA
TEMP. COEFF.
S
Z
(%/K)
at I
Z
(2)
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
REVERSE CURRENT at
REVERSE VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 100
µ
s;
T
amb
= 25
°
C
I
R
(
µ
A)
V
R
(V)
NOM.
MAX.
TYP.
MAX.
MAX.
MAX.
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2001 Feb 09
6
Philips Semiconductors
Product specification
Voltage regulator diodes
PMBZ5226B to PMBZ5257B
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
330
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
GRAPHICAL DATA
Fig.2
Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
handbook, halfpage
MBG801
10
3
1
duration (ms)
PZSM
(W)
10
10
2
10
1
10
1
(1)
(2)
(1) T
j
= 25
°
C (prior to surge).
(2) T
j
= 150
°
C (prior to surge).
Fig.3
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0.6
1.0
300
100
0
200
MBG781
0.8
VF (V)
IF
(mA)
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2001 Feb 09
7
Philips Semiconductors
Product specification
Voltage regulator diodes
PMBZ5226B to PMBZ5257B
PACKAGE OUTLINE
UNIT
A
1
max.
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
IEC
JEDEC
EIAJ
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT23
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2001 Feb 09
8
Philips Semiconductors
Product specification
Voltage regulator diodes
PMBZ5226B to PMBZ5257B
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS
(1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
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2001 Feb 09
9
Philips Semiconductors
Product specification
Voltage regulator diodes
PMBZ5226B to PMBZ5257B
NOTES
background image
2001 Feb 09
10
Philips Semiconductors
Product specification
Voltage regulator diodes
PMBZ5226B to PMBZ5257B
NOTES
background image
2001 Feb 09
11
Philips Semiconductors
Product specification
Voltage regulator diodes
PMBZ5226B to PMBZ5257B
NOTES
background image
© Philips Electronics N.V.
SCA
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Internet: http://www.semiconductors.philips.com
2001
71
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Printed in The Netherlands
613514/03/pp
12
Date of release:
2001 Feb 09
Document order number:
9397 750 07839

Document Outline