PHP73N06T; PHB73N06T
N-channel enhancement mode field-effect transistor
Rev. 01 — 12 March 2001
Product specification
c
c
1.
Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™
1
technology.
Product availability:
PHP73N06T in SOT78 (TO-220AB)
PHB73N06T in SOT404 (D
2
-PAK).
2.
Features
s
Fast switching
s
Very low on-state resistance.
3.
Applications
s
General purpose switching
s
Switched mode power supplies.
4.
Pinning information
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pinning - SOT78 and SOT404, simplified outline and symbol
Pin
Description
Simplified outline
Symbol
1
gate (g)
SOT78 (TO-220AB)
SOT404 (D
2-
PAK)
2
drain (d)
3
source (s)
mb
mounting base;
connected to
drain (d)
MBK106
1 2
mb
3
1
3
2
MBK116
mb
s
d
g
MBB076
Philips Semiconductors
PHP73N06T; PHB73N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 12 March 2001
2 of 14
9397 750 08107
© Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
V
DS
drain-source voltage (DC)
T
j
= 25 to 175
°
C
−
55
V
I
D
drain current (DC)
T
mb
= 25
°
C; V
GS
= 10 V
−
73
A
P
tot
total power dissipation
T
mb
= 25
°
C
−
149
W
T
j
junction temperature
−
175
°
C
R
DSon
drain-source on-state resistance
T
j
= 25
°
C; V
GS
= 10 V; I
D
= 25 A
12
14
m
Ω
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
DS
drain-source voltage (DC)
T
j
= 25 to 175
°
C
−
55
V
V
DGR
drain-gate voltage (DC)
T
j
= 25 to 175
°
C; R
GS
= 20 k
Ω
−
55
V
V
GS
gate-source voltage (DC)
−
±
20
V
I
D
drain current (DC)
T
mb
= 25
°
C; V
GS
= 10 V;
and
−
73
A
T
mb
= 100
°
C; V
GS
= 10 V;
and
−
52
A
I
DM
peak drain current
T
mb
= 25
°
C; pulsed; t
p
≤
10
µ
s;
−
266
A
P
tot
total power dissipation
T
mb
= 25
°
C;
−
166
W
T
stg
storage temperature
−
55
175
°
C
T
j
operating junction temperature
−
55
175
°
C
Source-drain diode
I
S
source (diode forward) current (DC)
T
mb
= 25
°
C
−
73
A
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
µ
s
−
266
A
Avalanche ruggedness
E
AS
non-repetitive avalanche energy
unclamped inductive load; I
AS
= 50 A;
t
p
= 0.1 ms; V
DD
≤
25 V; R
GS
= 50
Ω
;
V
GS
= 5 V; starting T
j
= 25
°
C;
−
125
mJ
Philips Semiconductors
PHP73N06T; PHB73N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 12 March 2001
3 of 14
9397 750 08107
© Philips Electronics N.V. 2001. All rights reserved.
V
GS
≥
5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse
Unclamped inductive load; V
DD
≤
25 V; R
GS
= 50
Ω
;
V
GS
= 5 V; starting T
j
= 25
°
C and 150
°
C
Fig 3.
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage.
Fig 4.
Non-repetitive avalanche ruggedness current
as a function of pulse duration.
03aa16
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
200
P
der
T
mb
(
o
C)
(%)
03aa24
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
200
I
der
(%)
T
mb
(
o
C)
P
der
P
tot
P
tot 25 C
°
(
)
----------------------
100%
×
=
I
der
I
D
I
D 25 C
°
(
)
-------------------
100%
×
=
10
1
RDSon = VDS / ID
103
102
10
1
ID
(A)
1
10
102
VDS (V)
tp =
tp =
1
µ
s
10
µ
s
100
µ
s
1 ms
10 ms
100 ms
D.C.
tp
tp
T
P
t
T
δ
=
003aaa083
102
10
1
Tj prior to avalanche = 150
o
C
25 oC
IAS
(A)
tp ms
10
1
10-1
10-2
10-3
003aaa085
Philips Semiconductors
PHP73N06T; PHB73N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 12 March 2001
4 of 14
9397 750 08107
© Philips Electronics N.V. 2001. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
R
th(j-mb)
thermal resistance from junction to mounting
base
0.9
K/W
R
th(j-a)
thermal resistance from junction to ambient
SOT78 package; vertical in still air
60
K/W
SOT404 package; mounted on
printed circuit board; minimum
footprint.
50
K/W
Fig 5.
Transient thermal impedance from junction to mounting base as a function of
pulse duration.
10
1
10-1
10-2
10-3
10-4
10-5
10-6
10-7
Zth (j-mb)
(K/W)
1
10-1
10-2
10-3
δ
= 0.5
δ
=
0.2
0.1
0.05
0.02
0.5
Single pulse
T
P
tp
t
T
tp
δ
=
tp (s)
003aaa084
Philips Semiconductors
PHP73N06T; PHB73N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 12 March 2001
5 of 14
9397 750 08107
© Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
I
D
= 250
µ
A; V
GS
= 0 V
55
−
−
V
V
GS(th)
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
;
T
j
= 25
°
C
2
3
4
V
T
j
= 175
°
C
1
−
−
V
I
DSS
drain-source leakage current
V
DS
= 55 V; V
GS
= 0 V
T
j
= 25
°
C
−
0.05
10
µ
A
T
j
= 175
°
C
−
−
500
µ
A
I
GSS
gate-source leakage current
V
GS
=
±
20 V; V
DS
= 0 V
−
2
100
nA
R
DSon
drain-source on-state resistance
V
GS
= 10 V; I
D
= 25 A;
and
T
j
= 25
o
C
−
12
14
m
Ω
T
j
= 175
°
C
−
−
28
m
Ω
Dynamic characteristics
Q
g(tot)
total gate charge
I
D
= 50 A; V
DD
= 44 V;
V
GS
= 10 V;
−
54
−
nC
Q
gs
gate-source charge
−
10
−
nC
Q
gd
gate-drain (Miller) charge
−
19
−
nC
C
iss
input capacitance
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
−
1848
2464
pF
C
oss
output capacitance
−
421
506
pF
C
rss
reverse transfer capacitance
−
231
317
pF
t
d(on)
turn-on delay time
V
DD
= 30 V; R
D
= 1.2
Ω
;
V
GS
= 5 V; R
G
= 10
Ω
−
17
26
ns
t
r
rise time
−
79
119
ns
t
d(off)
turn-off delay time
−
57
80
ns
t
f
fall time
−
51
71
ns
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 25 A; V
GS
= 0 V;
−
0.85
1.2
V
t
rr
reverse recovery time
I
S
= 73 A;
dI
S
/dt =
−
100 A/
µ
s;
V
GS
=
−
10 V; V
R
= 30 V
−
54
−
ns
Q
r
recovered charge
−
0.12
−
µ
C
Philips Semiconductors
PHP73N06T; PHB73N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 12 March 2001
6 of 14
9397 750 08107
© Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
×
R
DSon
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T
j
= 25
°
C
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 9.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
VGS (V) =
10
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
20.0
15.0
10
8
6
4
2
0
VDS (V)
200
180
160
140
120
100
80
60
40
20
0
ID
(A)
003aaa086
003aaa087
ID
(A)
VGS (V)
10
6
4
2
0
8
0
10
20
30
40
50
60
70
80
90
100
25
o
C
Tj = 175
o
C
VGS = 5.5 V
6.0 V
6.5 V
7.0 V
7.5 V
8.0 V
10 V
003aaa088
RDSon
(m
Ω
)
18
16
14
12
10
20
22
24
26
30
28
10
20
30
15
25
5
35
40
45
50
ID (A)
0
-40
-80
40
80
120
160
200
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tj (
o
C)
a
003aaa076
a
R
DSon
R
DSon 25 C
°
(
)
----------------------------
=
Philips Semiconductors
PHP73N06T; PHB73N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 12 March 2001
7 of 14
9397 750 08107
© Philips Electronics N.V. 2001. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
T
j
= 25
°
C
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
×
R
DSon
V
GS
= 0 V; f = 1 MHz
Fig 12. Forward transconductance as a function of
drain current; typical values.
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
0
1
2
3
4
5
0
40
80
120
160
200
-40
-80
max.
typ
min
VGS(th)
(V)
Tj (
oC)
003aaa077
2%
typ
98%
10-1
10-2
10-3
10-4
10-5
10-6
0
1
2
3
4
5
ID
(A)
VGS (V)
003aaa078
0
20
40
60
80
100
30
25
20
15
10
5
0
(S)
gfs
ID (A)
003aaa089
0
500
1000
1500
2000
2500
3000
3500
Ciss
Coss
Crss
Ciss,
Coss,
Crss
(pF)
VDS (V)
10
102
1
10-1
10-2
003aaa090
Philips Semiconductors
PHP73N06T; PHB73N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 12 March 2001
8 of 14
9397 750 08107
© Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C and 150
°
C; V
GS
= 0 V
I
D
= 50 A; V
DD
= 11 V and 44 V
Fig 14. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 15. Gate-source voltage as a function of gate
charge; typical values.
Tj = 150
o
C
Tj = 25
o
C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
100
90
80
70
60
50
40
30
20
10
0
IS
(A)
VSD (V)
003aaa091
VDD = 11 V
VDD = 44 V
VGS
(V)
QG (nC)
0
10
20
30
40
50
60
10
8
6
4
2
0
003aaa092
Philips Semiconductors
PHP73N06T; PHB73N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 12 March 2001
9 of 14