KM44C4000C, KM44C4100C
CMOS DRAM
KM44V4000C, KM44V4100C
This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells
within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consump-
tion(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-
RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.
This 4Mx4 Fast Page Mode DRAM family is fabricated using Samsung
′
s advanced CMOS process to realize high band-width, low power
consumption and high reliability. It may be used as main memory for high level computer, microcomputer and personal computer.
•
Part Identification
- KM44C4000C/C-L (5V, 4K Ref.)
- KM44C4100C/C-L (5V, 2K Ref.)
- KM44V4000C/C-L (3.3V, 4K Ref.)
- KM44V4100C/C-L (3.3V, 2K Ref.)
•
Fast Page Mode operation
•
CAS-before-RAS refresh capability
•
RAS-only and Hidden refresh capability
•
Self-refresh capability (L-ver only)
•
Fast parallel test mode capability
•
TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
•
Early Write or output enable controlled write
•
JEDEC Standard pinout
•
Available in Plastic SOJ and TSOP(II) packages
•
Single +5V
±
10% power supply (5V product)
•
Single +3.3V
±
0.3V power supply (3.3V product)
Control
Clocks
RAS
CAS
W
Vcc
Vss
DQ0
to
DQ3
A0-A11
(A0 - A10)
*1
A0 - A9
(A0 - A10)
*1
Memory Array
4,194,304 x 4
Cells
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
•
Refresh Cycles
Part
NO.
V
CC
Refresh
cycle
Refresh period
Normal
L-ver
C4000C
5V
4K
64ms
128ms
V4000C
3.3V
C4100C
5V
2K
32ms
V4100C
3.3V
•
Performance Range
Speed
t
RAC
t
CAC
t
RC
t
PC
Remark
-5
50ns
13ns
90ns
35ns
5V/3.3V
-6
60ns
15ns
110ns
40ns
5V/3.3V
•
Active Power Dissipation
Speed
3.3V
5V
4K
2K
4K
2K
-5
324
396
495
605
-6
288
360
440
550
Unit : mW
S
e
ns
e
A
m
p
s
&
I/
O
Data out
Buffer
Data in
Buffer
OE
Note)
*1
: 2K Refresh
Col. Address Buffer
Row Address Buffer
Refresh Counter
Refresh Control
Refresh Timer
Column Decoder
Row Decoder
VBB Generator
KM44C4000C, KM44C4100C
CMOS DRAM
KM44V4000C, KM44V4100C
V
CC
DQ0
DQ1
W
RAS
*A11(N.C)
A10
A0
A1
A2
A3
V
CC
V
SS
DQ3
DQ2
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
PIN CONFIGURATION (Top Views)
Pin Name
Pin Function
A0 - A11
Address Inputs (4K Product)
A0 - A10
Address Inputs (2K Product)
DQ0 - 3
Data In/Out
V
SS
Ground
RAS
Row Address Strobe
CAS
Column Address Strobe
W
Read/Write Input
OE
Data Output Enable
V
CC
Power(+5V)
Power(+3.3V)
N.C
No Connection (2K Ref. product)
V
CC
DQ0
DQ1
W
RAS
*A11(N.C)
A10
A0
A1
A2
A3
V
CC
V
SS
DQ3
DQ2
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
*A11 is N.C for KM44C/V4100C(5V/3.3V, 2K Ref. product)
K : 300mil 26(24) SOJ
S : 300mil 26(24) TSOP II
•KM44C/V40(1)00CK
•KM44C/V40(1)00CS
KM44C4000C, KM44C4100C
CMOS DRAM
KM44V4000C, KM44V4100C
ABSOLUTE MAXIMUM RATINGS
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted
to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Parameter
Symbol
Rating
Units
3.3V
5V
Voltage on any pin relative to V
SS
V
IN,
V
OUT
-0.5 to +4.6
-1.0 to +7.0
V
Voltage on V
CC
supply relative to V
SS
V
CC
-0.5 to +4.6
-1.0 to +7.0
V
Storage Temperature
Tstg
-55 to +150
-55 to +150
°
C
Power Dissipation
P
D
1
1
W
Short Circuit Output Current
I
OS
50
50
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70
°
C)
*1 : V
CC
+1.3V/15ns(3.3V), V
CC
+2.0V/20ns(5V), Pulse width is measured at V
CC
*2 : -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at V
SS
Parameter
Symbol
3.3V
5V
Units
Min
Typ
Max
Min
Typ
Max
Supply Voltage
V
CC
3.0
3.3
3.6
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
0
0
0
V
Input High Voltage
V
IH
2.0
-
V
CC
+0.3
*1
2.4
-
V
CC
+1.0
*1
V
Input Low Voltage
V
IL
-0.3
*2
-
0.8
-1.0
*2
-
0.8
V
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Max
Parameter
Symbol
Min
Max
Units
3.3V
Input Leakage Current (Any input 0
≤
V
IN
≤
V
IN
+0.3V,
all other input pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-2mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=2mA)
V
OL
-
0.4
V
5V
Input Leakage Current (Any input 0
≤
V
IN
≤
V
IN
+0.5V,
all other input pins not under test=0 Volt)
I
I(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V
≤
V
OUT
≤
V
CC
)
I
O(L)
-5
5
uA
Output High Voltage Level(I
OH
=-5mA)
V
OH
2.4
-
V
Output Low Voltage Level(I
OL
=4.2mA)
V
OL
-
0.4
V
KM44C4000C, KM44C4100C
CMOS DRAM
KM44V4000C, KM44V4100C
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one fast page mode cycle time, t
PC
.
DC AND OPERATING CHARACTERISTICS
(Continued)
I
CC1
* : Operating Current (RAS and CAS, Address cycling @t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS, Address cycling @t
RC
=min.)
I
CC4
* : Fast Page Mode Current (RAS=V
IL
, CAS, Address cycling @t
PC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @t
RC
=min.)
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
)=V
CC
-0.2V, Input low voltage(V
IL
)=0.2V, CAS=0.2V,
DQ=Don
′
t care, T
RC
=31.25us(4K/L-ver), 62.5us(2K/L-ver), T
RAS
=T
RAS
min~300ns
I
CCS
: Self Refresh Current
RAS=CAS=0.2V, W=OE=A0 ~ A11=V
CC
-0.2V or 0.2V,
DQ0 ~ DQ3=V
CC
-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
KM44V4000C
KM44V4100C
KM44C4000C
KM44C4100C
I
CC1
Don
′
t care
-5
-6
90
80
110
100
90
80
110
100
mA
mA
I
CC2
Normal
L
Don
′
t care
1
1
1
1
2
1
2
1
mA
mA
I
CC3
Don
′
t care
-5
-6
90
80
110
100
90
80
110
100
mA
mA
I
CC4
Don
′
t care
-5
-6
80
70
90
80
80
70
90
80
mA
mA
I
CC5
Normal
L
Don
′
t care
0.5
200
0.5
200
1
250
1
250
mA
uA
I
CC6
Don
′
t care
-5
-6
90
80
110
100
90
80
110
100
mA
mA
I
CC7
L
Don
′
t care
250
250
300
300
uA
I
CCS
L
Don
′
t care
200
200
250
250
uA
KM44C4000C, KM44C4100C
CMOS DRAM
KM44V4000C, KM44V4100C
CAPACITANCE
(T
A
=25
°
C, V
CC
=5V or 3.3V, f=1MHz)
Parameter
Symbol
Min
Max
Units
Input capacitance [A0 ~ A11]
C
IN1
-
5
pF
Input capacitance [RAS, CAS, W, OE]
C
IN2
-
7
pF
Output capacitance [DQ0 - DQ3]
C
DQ
-
7
pF
Test condition (5V device) : V
CC
=5.0V
±
10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V
Parameter
Symbol
-5
-6
Units
Notes
Min
Max
Min
Max
Random read or write cycle time
t
RC
90
110
ns
Read-modify-write cycle time
t
RWC
133
155
ns
Access time from RAS
t
RAC
50
60
ns
3,4,10
Access time from CAS
t
CAC
13
15
ns
3,4,5
Access time from column address
t
AA
25
30
ns
3,10
CAS to output in Low-Z
t
CLZ
0
0
ns
3
Output buffer turn-off delay
t
OFF
0
13
0
15
ns
6
Transition time (rise and fall)
t
T
3
50
3
50
ns
2
RAS precharge time
t
RP
30
40
ns
RAS pulse width
t
RAS
50
10K
60
10K
ns
RAS hold time
t
RSH
13
15
ns
CAS hold time
t
CSH
50
60
ns
CAS pulse width
t
CAS
13
10K
15
10K
ns
RAS to CAS delay time
t
RCD
20
37
20
45
ns
4
RAS to column address delay time
t
RAD
15
25
15
30
ns
10
CAS to RAS precharge time
t
CRP
5
5
ns
Row address set-up time
t
ASR
0
0
ns
Row address hold time
t
RAH
10
10
ns
Column address set-up time
t
ASC
0
0
ns
Column address hold time
t
CAH
10
10
ns
Column address to RAS lead time
t
RAL
25
30
ns
Read command set-up time
t
RCS
0
0
ns
Read command hold time referenced to CAS
t
RCH
0
0
ns
8
Read command hold time referenced to RAS
t
RRH
0
0
ns
8
Write command hold time
t
WCH
10
10
ns
Write command pulse width
t
WP
10
10
ns
Write command to RAS lead time
t
RWL
13
15
ns
Write command to CAS lead time
t
CWL
13
15
ns
AC CHARACTERISTICS
(0
°
C
≤
T
A
≤
70
°
C, See note 1,2)
Test condition (3.3V device) : V
CC
=3.3V
±
0.3V, Vih/Vil=2.0/0.8V, Voh/Vol=2.0/0.8V
KM44C4000C, KM44C4100C
CMOS DRAM
KM44V4000C, KM44V4100C
AC CHARACTERISTICS
(Continued)
Parameter
Symbol
-5
-6
Units
Note
Min
Max
Min
Max
Data set-up time
t
DS
0
0
ns
9
Data hold time
t
DH
10
10
ns
9
Refresh period (2K, Normal)
t
REF
32
32
ms
Refresh period (4K, Normal)
t
REF
64
64
ms
Refresh period (L-ver)
t
REF
128
128
ms
Write command set-up time
t
WCS
0
0
ns
7
CAS to W delay time
t
CWD
36
40
ns
7
RAS to W delay time
t
RWD
73
85
ns
7
Column address to W delay time
t
AWD
48
55
ns
7
CAS precharge to W delay time
t
CPWD
53
60
ns
CAS set-up time (CAS -before-RAS refresh)
t
CSR
5
5
ns
CAS hold time (CAS -before-RAS refresh)
t
CHR
10
10
ns
RAS to CAS precharge time
t
RPC
5
5
ns
Access time from CAS precharge
t
CPA
30
35
ns
3
Fast Page cycle time
t
PC
35
40
ns
Fast Page read-modify-write cycle time
t
PRWC
76
85
ns
CAS precharge time (Fast Page cycle)
t
CP
10
10
ns
RAS pulse width (Fast Page cycle)
t
RASP
50
200K
60
200K
ns
RAS hold time from CAS precharge
t
RHCP
30
35
ns
OE access time
t
OEA
13
15
ns
OE to data delay
t
OED
13
15
ns
Output buffer turn off delay time from OE
t
OEZ
0
13
0
15
ns
6
OE command hold time
t
OEH
13
15
ns
Write command set-up time (Test mode in)
t
WTS
10
10
ns
11
Write command hold time (Test mode in)
t
WTH
10
10
ns
11
W to RAS precharge time(C-B-R refresh)
t
WRP
10
10
ns
W to RAS hold time(C-B-R refresh)
t
WRH
10
10
ns
RAS pulse width (C-B-R self refresh)
t
RASS
100
100
us
13,14,15
RAS precharge time (C-B-R self refresh)
t
RPS
90
110
ns
13,14,15
CAS hold time (C-B-R self refresh)
t
CHS
-50
-50
ns
13,14,15
KM44C4000C, KM44C4100C
CMOS DRAM
KM44V4000C, KM44V4100C
TEST MODE CYCLE
Parameter
Symbol
-5
-6
Units
Notes
Min
Max
Min
Max
Random read or write cycle time
t
RC
95
115
ns
Read-modify-write cycle time
t
RWC
138
160
ns
Access time from RAS