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Motorola Small–Signal Transistors, FETs and Diodes Device Data

Amplifier Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

2N5550

2N5551

Unit

Collector – Emitter Voltage

VCEO

140

160

Vdc

Collector – Base Voltage

VCBO

160

180

Vdc

Emitter – Base Voltage

VEBO

6.0

Vdc

Collector Current — Continuous

600

mAdc

Total Device Dissipation @ TA = 25

Derate above 25

625

5.0

mW/

Total Device Dissipation @ TC = 25

Derate above 25

1.5

Watts

mW/

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

200

C/W

Thermal Resistance, Junction to Case

83.3

C/W

ELECTRICAL CHARACTERISTICS

(TA = 25

C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage(1)

(IC = 1.0 mAdc, IB = 0)

2N5550

2N5551

V(BR)CEO

140

160

—

Vdc

Collector – Base Breakdown Voltage

(IC = 100

Adc, IE = 0 )

2N5550

2N5551

V(BR)CBO

160

180

—

Vdc

Emitter – Base Breakdown Voltage

(IE = 10

Adc, IC = 0)

V(BR)EBO

6.0

—

Vdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

2N5550

(VCB = 120 Vdc, IE = 0)

2N5551

(VCB = 100 Vdc, IE = 0, TA = 100

2N5550

(VCB = 120 Vdc, IE = 0, TA = 100

2N5551

ICBO

—

100

nAdc

Adc

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

IEBO

—

nAdc

1. Pulse Test: Pulse Width = 300

s, Duty Cycle = 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by 2N5550/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

2N5550

2N5551

*Motorola Preferred Device

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

Motorola, Inc. 1996

COLLECTOR

BASE

EMITTER

2N5550 2N5551

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25

C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

2N5550

2N5551

(IC = 10 mAdc, VCE = 5.0 Vdc)

2N5550

2N5551

(IC = 50 mAdc, VCE = 5.0 Vdc)

2N5550

2N5551

hFE

—

250

—

Collector – Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

Both Types

(IC = 50 mAdc, IB = 5.0 mAdc)

2N5550

2N5551

VCE(sat)

—

0.15

0.25

0.20

Vdc

Base – Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

Both Types

(IC = 50 mAdc, IB = 5.0 mAdc)

2N5550

2N5551

VBE(sat)

—

1.0

1.2

1.0

Vdc

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)

100

300

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

—

6.0

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

2N5550

2N5551

Cibo

—

Small–Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

200

—

Noise Figure

(IC = 250

Adc, VCE = 5.0 Vdc, RS = 1.0 k

Ω

2N5550

f = 1.0 kHz)

2N5551

—

8.0

1. Pulse Test: Pulse Width = 300

s, Duty Cycle = 2.0%.

2N5550 2N5551

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 3. Collector Cut–Off Region

IC, COLLECTOR CURRENT (mA)

1.0

IC, COLLECTOR CURRENT (mA)

, VOL

TAGE (VOL

TS)

1.0

2.0

5.0

2.5

100

TJ = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VC for VCE(sat)

VB for VBE(sat)

0.1

0.2

0.5

Figure 4. “On” Voltages

VBE, BASE–EMITTER VOLTAGE (VOLTS)

101

10–5

Figure 5. Temperature Coefficients

TJ = – 55

C to +135

0.4

0.3

0.1

0.8

0.6

0.4

0.2

100

10–1

10–2

10–3

10–4

0.2

0.1

0.2

0.4

0.3

0.6

0.5

VCE = 30 V

TJ = 125

IC = ICES

, COLLECT

OR CURRENT

(

I C

, TEMPERA

TURE COEFFICIENT

(mV/

3.0

2.0

1.5

1.0

0.5

– 0.5

– 1.0

– 1.5

– 2.0

– 2.5

C, CAP

ACIT

ANCE (pF)

Figure 6. Switching Time Test Circuit

VR, REVERSE VOLTAGE (VOLTS)

100

1.0

0.2

0.5

1.0

2.0

5.0

Cibo

7.0

5.0

3.0

2.0

0.3

0.7

3.0

7.0

Cobo

Figure 7. Capacitances

REVERSE

FORWARD

0.3

1.0

2.0

5.0

100

0.1

0.2

0.5

3.0

0.3

10.2 V

Vin

INPUT PULSE

VBB

– 8.8 V

100

5.1 k

0.25

Vin

100

1N914

Vout

VCC

30 V

3.0 k

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

Values Shown are for IC @ 10 mA

TJ = 25

2N5550 2N5551

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.

DIMENSION D AND J APPLY BETWEEN L AND K

MINIMUM. LEAD DIMENSION IS UNCONTROLLED

IN P AND BEYOND DIMENSION K MINIMUM.

SECTION X–X

X X

SEATING

PLANE

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

INCHES

0.175

0.205

4.45

5.20

0.170

0.210

4.32

5.33

0.125

0.165

3.18

4.19

0.016

0.022

0.41

0.55

0.016

0.019

0.41

0.48

0.045

0.055

1.15

1.39

0.095

0.105

2.42

2.66

0.015

0.020

0.39

0.50

0.500

–––

12.70

–––

0.250

–––

6.35

–––

0.080

0.105

2.04

2.66

–––

0.100

–––

2.54

0.115

–––

2.93

–––

0.135

–––

3.43

–––

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

CASE 029–04

(TO–226AA)

ISSUE AD

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

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2N5550/D

*2N5550/D*

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