1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
One Watt Amplifier Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
BDC01D
Unit
Collector – Emitter Voltage
VCEO
100
Vdc
Collector – Base Voltage
VCBO
100
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
0.5
Adc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
PD
1.0
8.0
Watts
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
2.5
20
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
125
°
C/W
Thermal Resistance, Junction to Case
R
q
JC
50
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Voltage
(IC = 10 mA, IB = 0)
V(BR)CEO
100
—
Vdc
Collector Cutoff Current
(VCB = 100 V, IE = 0)
ICBO
—
0.1
m
Adc
Emitter Cutoff Current
(IC = 0, VEB = 5.0 V)
IEBO
—
100
nAdc
Order this document
by BDC01D/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BDC01D
CASE 29–05, STYLE 14
TO–92 (TO–226AE)
1
2
3
©
Motorola, Inc. 1996
COLLECTOR
2
3
BASE
1
EMITTER
BDC01D
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 2.0 V)
hFE
40
25
400
—
—
Collector – Emitter Saturation Voltage(1)
(IC = 1000 mA, IB = 100 mA)
VCE(sat)
—
0.7
Vdc
Collector – Emitter On Voltage(1)
(IC = 1000 mA, VCE = 1.0 V)
VBE(on)
—
1.2
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 200 mA, VCE = 5.0 V, f = 20 MHz)
fT
50
—
MHz
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Cob
—
30
pF
1. Pulse Test: Pulse Width
v
300
m
s; Duty Cycle 2.0%.
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
200
100
80
60
40
h
FE
, DC CURRENT
GAIN
TJ = 125
°
C
25
°
C
–55
°
C
VCE = 1.0 V
300
500
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
V
CE
, COLLECT
OR–EMITTER VOL
TAGE (VOL
TS)
1.0
0.8
0.6
0.4
0.2
0
0.1
10
1.0
TJ = 25
°
C
IC = 10 mA
0.05
0.2
0.5
2.0
5.0
20
100 mA
250 mA
50
mA
50
500 mA
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
V
, VOL
TAGE
(VOL
TS)
1.0
0.8
0.6
0.4
0.2
0
0.5
1.0
200
20
TJ = 25
°
C
VBE(on) @ VCE = 1.0 V
VCE(sat) @ IC/IB = 10
5.0
10
50
100
VBE(sat) @ IC/IB = 10
2.0
500
BDC01D
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
IC, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
–0.8
–2.8
1.0
100
10
θ
VB for VBE
0.5
2.0
5.0
20
50
200
–1.2
–1.6
–2.0
–2.4
VB
, TEMPERA
TURE COEFFICIENT
(mV/
C)
°
θ
500
C, CAP
ACIT
ANCE
(pF)
Figure 5. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
80
60
40
20
10
4.0
TJ = 25
°
C
Cobo
Cibo
8.0
6.0
Figure 6. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
200
70
50
30
20
10
7.0
5.0
3.0
2.0
300
200
100
70
50
30
VCE = 2.0 V
TJ = 25
°
C
f
, CURRENT–GAIN — BANDWIDTH PRODUCT
(MHz)
T
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
2 k
1.0
I C
, COLLECT
OR
CURRENT
(mA)
MPSW05
2.0
5.0
Figure 7. Active Region — Safe Operating Area
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
500
200
100
50
20
10
10
20
60 80 100
MPSW06
100
µ
s
1.0 ms
1.0 s
TC = 25
°
C
TA = 25
°
C
dc
dc
1 k
DUTY CYCLE
≤
10%
BDC01D
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
CASE 029–05
(TO–226AE)
ISSUE AD
R
A
P
L
F
B
K
G
H
C
V
N
N
X X
SEATING
PLANE
1
J
SECTION X–X
D
2 3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.44
5.21
B
0.290
0.310
7.37
7.87
C
0.125
0.165
3.18
4.19
D
0.018
0.022
0.46
0.56
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.018
0.024
0.46
0.61
K
0.500
–––
12.70
–––
L
0.250
–––
6.35
–––
N
0.080
0.105
2.04
2.66
P
–––
0.100
–––
2.54
R
0.135
–––
3.43
–––
V
0.135
–––
3.43
–––
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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BDC01D/D
*BDC01D/D*
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