©
Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 0
1
Publication Order Number:
DTA114EET1/D
DTA114EET1 SERIES
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–75/SOT–416 package which is designed for low power surface
mount applications.
•
Simplifies Circuit Design
•
Reduces Board Space
•
Reduces Component Count
•
The SC–75/SOT–416 package can be soldered using
wave or reflow. The modified gull–winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
•
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143ZET1
DTA124XET1
DTA123JET1
6A
6B
6C
6D
6E
6F
6H
6K
6L
6M
10
22
47
10
10
4.7
2.2
4.7
22
2.2
10
22
47
47
∞
∞
2.2
47
47
47
3000/Tape & Reel
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CASE 463
SOT–416/SC–75
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
PNP SILICON
BIAS RESISTOR
TRANSISTORS
3
2
1
COLLECTOR
3
1
BASE
2
EMITTER
DTA114EET1 SERIES
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2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR–4 Board
(1.)
@ T
A
= 25
°
C
Derate above 25
°
C
P
D
200
1.6
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
(1.)
R
θ
JA
600
°
C/W
Total Device Dissipation,
FR–4 Board
(2.)
@ T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
(2.)
R
θ
JA
400
°
C/W
Junction and Storage Temperature Range
T
J
, T
stg
–55 to +150
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
—
—
100
nAdc
Collector–Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
—
—
500
nAdc
Emitter–Base Cutoff Current
DTA114EET1
(V
EB
= 6.0 V, I
C
= 0)
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143ZET1
DTA124XET1
DTA123JET1
I
EBO
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
0.2
0.1
0.2
0.9
1.9
2.3
0.18
0.13
0.2
mAdc
Collector–Base Breakdown Voltage (I
C
= 10
µ
A, I
E
= 0)
V
(BR)CBO
50
—
—
Vdc
Collector–Emitter Breakdown Voltage
(3.)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
—
—
Vdc
ON CHARACTERISTICS
(3.)
DC Current Gain
DTA114EET1
(V
CE
= 10 V, I
C
= 5.0 mA)
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143ZET1
DTA124XET1
DTA123JET1
h
FE
35
60
80
80
160
160
8.0
80
80
80
60
100
140
140
250
250
15
140
130
140
—
—
—
—
—
—
—
—
—
—
Collector–Emitter Saturation Voltage (I
C
= 10 mA, I
E
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) DTA123EET1
(I
C
= 10 mA, I
B
= 1 mA) DTA114TET1/DTA143TET1/
DTA143ZET1/DTA124XET1
V
CE(sat)
—
—
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
Ω
)
DTA114EET1
DTA124EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143ZET1
DTA124XET1
DTA123JET1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k
Ω
)
DTA144EET1
V
OL
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0
×
1.0 Inch Pad
3. Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
DTA114EET1 SERIES
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k
Ω
)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 k
Ω
)
DTA114TET1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k
Ω
)
DTA143TET1
DTA123EET1
V
OH
4.9
—
—
Vdc
Input Resistor
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143ZET1
DTA124XET1
DTA123JET1
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
15.4
1.54
10
22
47
10
10
4.7
2.2
4.7
22
2.2
13
28.6
61.1
13
13
6.1
2.9
6.1
28.6
2.86
k
Ω
Resistor Ratio
DTA114EET1/DTA124EET1/DTA144EET1
DTA114YET1
DTA114TET1/DTA143TET1
DTA123EET1
DTA143ZET1
DTA124XET1
DTA123JET1
R
1
/R
2
0.8
0.17
—
0.8
0.055
0.38
0.038
1.0
0.21
—
1.0
0.1
0.47
0.047
1.2
0.25
—
1.2
0.185
0.56
0.056
Figure 1. Derating Curve
250
200
150
100
50
0
– 50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
°
C)
P
D
, POWER DISSIP
A
TION
(MILLIW
A
TTS)
R
θ
JA
= 600
°
C/W
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED
TRANSIENT
THERMAL
RESIST
ANCE
t, TIME (s)
Figure 2. Normalized Thermal Response
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
DTA114EET1 SERIES
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS — DTA114EET1
V
in
, INPUT
VOL
TAGE (VOL
TS)
I C
, COLLECT
OR
CURRENT
(mA)
h
FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 3. V
CE(sat)
versus I
C
100
10
1
0.1
0.01
0.001
0
V
in
, INPUT VOLTAGE (VOLTS)
T
A
= –25
°
C
25
°
C
1
2
3
4
5
6
7
8
9
10
Figure 4. DC Current Gain
Figure 5. Output Capacitance
Figure 6. Output Current versus Input Voltage
Figure 7. Input Voltage versus Output Current
0.01
20
I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, MAXIMUM COLLECT
OR
VOL
TAGE (VOL
TS)
0.1
1
0
40
50
1000
1
10
100
I
C
, COLLECTOR CURRENT (mA)
T
A
= 75
°
C
–25
°
C
100
10
0
I
C
, COLLECTOR CURRENT (mA)
0.1
1
10
100
10
20
30
40
50
T
A
= –25
°
C
25
°
C
75
°
C
75
°
C
I
C
/I
B
= 10
50
0
10
20
30
40
4
3
1
2
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAP
ACIT
ANCE
(pF)
0
T
A
= –25
°
C
25
°
C
75
°
C
25
°
C
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
V
O
= 5 V
V
O
= 0.2 V
DTA114EET1 SERIES
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5
TYPICAL ELECTRICAL CHARACTERISTICS — DTA124EET1
V
in
, INPUT
VOL
TAGE (VOL
TS)
I C
, COLLECT
OR
CURRENT
(mA)
h
FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 8. V
CE(sat)
versus I
C
Figure 9. DC Current Gain
1000
10
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
Figure 10. Output Capacitance
I
C
, COLLECTOR CURRENT (mA)
0
10
20
30
V
O
= 0.2 V
T
A
= –25
°
C
75
°
C
100
10
1
0.1
40
50
Figure 11. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001
0
1
2
3
4
V
in
, INPUT VOLTAGE (VOLTS)
5
6
7
8
9
10
Figure 12. Input Voltage versus Output Current
0.01
V
CE(sat)
, MA
X
IM
U
M
COLLECT
OR
VOL
TAGE
(
VOL
TS)
0.1
1
10
40
I
C
, COLLECTOR CURRENT (mA)
0
20
50
75
°
C
25
°
C
T
A
= –25
°
C
50
0
10
20
30
40
4
3
2
1
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CA
P
ACIT
A
N
CE
(p
F)
25
°
C
I
C
/I
B
= 10
25
°
C
–25
°
C
V
CE
= 10 V
T
A
= 75
°
C
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
75
°
C
25
°
C
T
A
= –25
°
C
V
O
= 5 V
DTA114EET1 SERIES
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6
TYPICAL ELECTRICAL CHARACTERISTICS — DTA144EET1
V
in
, INPUT
VOL
TAGE (VOL
TS)
I C
, COLLECT
OR
CURRENT
(mA)
h
FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 13. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0
10
20
30
40
75
°
C
25
°
C
V
CE(sat)
, MA
X
IM
U
M
COLLECT
OR
VOL
TAGE
(
VOL
TS)
Figure 14. DC Current Gain
1000
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
–25
°
C
Figure 15. Output Capacitance
Figure 16. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001
0
10
25
°
C
V
in
, INPUT VOLTAGE (VOLTS)
–25
°
C
50
0
10
20
30
40
1
0.8
0.6
0.4
0.2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAP
ACIT
ANCE
(pF)
1
2
3
4
5
6
7
8
9
Figure 17. Input Voltage versus Output Current
100
10
1
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
T
A
= –25
°
C
25
°
C
75
°
C
50
I
C
/I
B
= 10
T
A
= –25
°
C
25
°
C
T
A
= 75
°
C
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
V
O
= 5 V
T
A
= 75
°
C
V
O
= 0.2 V
DTA114EET1 SERIES
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7
TYPICAL ELECTRICAL CHARACTERISTICS — DTA114YET1
10
1
0.1
0
10
20
30
40
50
100
10
1
0
2
4
6
8
10
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8
10
15
20
25
30
35
40
45
50
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, I
NPU
T
VOL
TAGE
(
VOL
TS)
I C
, COLLECT
OR
CURRENT
(mA)
h
FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 18. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
0
20
40
60
80
V
CE(sat)
, MA
X
IM
U
M
COLLECT
OR
VOL
TAGE
(
VOL
TS)
Figure 19. DC Current Gain
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 20. Output Capacitance
Figure 21. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
C