©
Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 0
1
Publication Order Number:
DTC114E/D
DTC114E SERIES
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the TO–92
package which is designed for through hole applications.
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
Total Power Dissipation
@ T
A
= 25
°
C
(1.)
Derate above 25
°
C
P
D
350
2.81
mW
mW/
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to
Ambient (surface mounted)
R
θ
JA
357
°
C/W
Operating and Storage
Temperature Range
T
J
, T
stg
–55 to
+150
°
C
Maximum Temperature for
Soldering Purposes,
Time in Solder Bath
T
L
260
10
°
C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
10
22
47
47
∞
∞
1.0
2.2
4.7
47
5000/Box
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
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CASE 29
TO–92 (TO–226)
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
NPN SILICON
BIAS RESISTOR
TRANSISTOR
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
DTC114E SERIES
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2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
—
—
100
nAdc
Collector–Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
—
—
500
nAdc
Emitter–Base Cutoff Current
DTC114E
(V
EB
= 6.0 V, I
C
= 0)
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
I
EBO
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
mAdc
Collector–Base Breakdown Voltage (I
C
= 10
µ
A, I
E
= 0)
V
(BR)CBO
50
—
—
Vdc
Collector–Emitter Breakdown Voltage
(2.)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
—
—
Vdc
ON CHARACTERISTICS
(2.)
DC Current Gain
DTC114E
(V
CE
= 10 V, I
C
= 5.0 mA)
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
60
100
140
140
350
350
5.0
15
30
200
—
—
—
—
—
—
—
—
—
—
Collector–Emitter Saturation Voltage
(I
C
= 10 mA, I
E
= 0.3 mA) DTC144E/DTC114Y
(I
C
= 10 mA, I
B
= 0.3 mA)
DTD113E/DTC143E
(I
C
= 10 mA, I
B
= 5 mA) DTC123E
(I
C
= 10 mA, I
B
= 1 mA) DTC114T/DTC143T/
(I
C
= 10 mA, I
B
= 1 mA)
DTC143Z/DTC124E
V
CE(sat)
—
—
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
Ω
)
DTC114E
DTC124E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k
Ω
)
DTC144E
V
OL
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
2. Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
DTC114E SERIES
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3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k
Ω
)
DTC114E
DTC124E
DTC144E
DTC114Y
DTC123E
DTC143E
(V
CC
= 5.0 V, V
B
= 0.05 V, R
L
= 1.0 k
Ω
)
DTD113E
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k
Ω
)
DTC114T
DTC143T
DTC143Z
V
OH
4.9
—
—
Vdc
Input Resistor
DTC114E
DTC124E
DTC144E
DTC114Y
DTC114T
DTC143T
DTD113E
DTC123E
DTC143E
DTC143Z
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
k
Ω
Resistor Ratio
DTC114E/DTC124E/DTC144E
DTC114Y
DTC114T/DTC143T
DTD113E/DTC123E/DTC143E
DTC143Z
R
1
/R
2
0.8
0.17
—
0.8
0.055
1.0
0.21
—
1.0
0.1
1.2
0.25
—
1.2
0.185
DTC114E SERIES
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4
TYPICAL ELECTRICAL CHARACTERISTICS
DTC114E
10
0
20
30
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
V
in
, INPUT
VOL
TAGE (VOL
TS)
T
A
= –25
°
C
75
°
C
25
°
C
40
50
1
0.1
0.01
0.001
0
20
40
60
80
I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, MAXIMUM COLLECT
OR
VOL
TAGE (VOL
TS)
1000
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
h
FE
, D
C
C
U
RRE
N
T
G
AI
N (N
ORMALI
Z
E
D)
T
A
= 75
°
C
25
°
C
–25
°
C
T
A
= –25
°
C
25
°
C
I
C
/I
B
= 10
75
°
C
25
°
C
T
A
= –25
°
C
100
10
1
0.1
0.01
0.001
0
1
2
3
4
V
in
, INPUT VOLTAGE (VOLTS)
I C
, COLLECT
OR
C
U
RRE
N
T
(m
A
)
5
6
7
8
9
10
50
0
10
20
30
40
4
3
1
2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAP
ACIT
ANCE
(pF)
75
°
C
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
V
O
= 5 V
V
CE
= 10 V
V
O
= 0.2 V
Figure 1. Derating Curve
250
200
150
100
50
0
–50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
°
C)
P
D
, P
O
W
ER
D
ISSI
P
A
TIO
N (
MILLI
W
A
TTS
)
R
θ
JA
= 625
°
C/W
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
Figure 4. Output Capacitance
Figure 5. V
CE(sat)
versus I
C
Figure 6. V
CE(sat)
versus I
C
DTC114E SERIES
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5
TYPICAL ELECTRICAL CHARACTERISTICS
DTC124E
Figure 7. V
CE(sat)
versus I
C
Figure 8. DC Current Gain
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
1000
10
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT
GAIN (NORMALIZED)
100
10
1
100
75
°
C
25
°
C
100
0
V
in
, INPUT VOLTAGE (VOLTS)
I C
, COLLECT
OR
CURRENT
(mA)
10
1
0.1
0.01
0.001
2
4
6
8
10
T
A
= –25
°
C
0
I
C
, COLLECTOR CURRENT (mA)
100
V
in
, INPUT
VOL
TAGE (VOL
TS)
T
A
= –25
°
C
75
°
C
10
1
0.1
10
20
30
40
50
Figure 11. Input Voltage versus Output Current
0.001
V
CE(sat)
, MAXIMUM COLLECT
OR
VOL
TAGE (VOL
TS)
T
A
= –25
°
C
75
°
C
25
°
C
0.01
0.1
1
40
I
C
, COLLECTOR CURRENT (mA)
0
20
60
80
50
0
10
20
30
40
4
3
2
1
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAP
ACIT
ANCE
(pF)
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
25
°
C
T
A
= 75
°
C
–25
°
C
V
CE
= 10 V
25
°
C
–
DTC114E SERIES
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6
TYPICAL ELECTRICAL CHARACTERISTICS
DTC144E
Figure 12. V
CE(sat)
versus I
C
0
2
4
6
8
10
100
10
1
0.1
0.01
0.001
I C
, COLLECT
OR
CURRENT
(mA)
V
in
, INPUT VOLTAGE (VOLTS)
T
A
= –25
°
C
75
°
C
25
°
C
Figure 13. DC Current Gain
Figure 14. Output Capacitance
100
10
1
0.1
0
10
20
30
40
50
V
in
, INPUT
VOL
TAGE (VOL
TS)
I
C
, COLLECTOR CURRENT (mA)
Figure 15. Output Current versus Input Voltage
1000
10
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT
GAIN (NORMALIZED)
T
A
= 75
°
C
25
°
C
–25
°
C
100
10
1
100
Figure 16. Input Voltage versus Output Current
0
20
40
60
80
10
1
0.1
0.01
I
C
, COLLECTOR CURRENT (mA)
T
A
= –25
°
C
25
°
C
75
°
C
V
CE(sat)
, MA
X
IM
U
M
COLLECT
OR
VOL
TA
G
E
(
VOL
TS
)
T
A
= –25
°
C
25
°
C
75
°
C
50
0
10
20
30
40
1
0.8
0.6
0.4
0.2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAP
ACIT
ANCE
(pF)
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
V
O
= 5 V
V
CE
= 10 V
I
C
/I
B
= 10
V
O
= 0.2 V
DTC114E SERIES
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7
TYPICAL ELECTRICAL CHARACTERISTICS
DTC114Y
10
1
0.1
0
10
20
30
40
50
100
10
1
0
2
4
6
8
10
4
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8
10
15
20
25
30
35
40
45
50
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT
VOL
TAGE (VOL
TS)
I C
, COLLECT
OR
CURRENT
(mA)
h
FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 17. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
0
20
40
60
80
V
CE(sat)
, MA
X
IM
U
M
COLLECT
OR
VOL
TA
G
E
(
VOL
TS
Figure 18. DC Current Gain
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
C
ob
, CA
P
ACIT
A
N
CE
(p
F
)
Figure 21. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
–25
°
C
25
°
C
T
A
= 75
°
C
V