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Motorola Bipolar Power Transistor Device Data

Silicon Power Transistors

The MJL21193 and MJL21194 utilize Perforated Emitter technology and are

specifically designed for high power audio output, disk head positioners and linear

applications.

•

Total Harmonic Distortion Characterized

•

High DC Current Gain – hFE = 25 Min @ IC = 8 Adc

•

Excellent Gain Linearity

•

High SOA: 2.25 A, 80 V, 1 Second

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

250

Vdc

Collector–Base Voltage

VCBO

400

Vdc

Emitter–Base Voltage

VEBO

Vdc

Collector–Emitter Voltage – 1.5 V

VCEX

400

Vdc

Collector Current — Continuous

Collector Current —

Peak (1)

Adc

Base Current – Continuous

Adc

Total Power Dissipation @ TC = 25

Derate Above 25

200

1.43

Watts

Operating and Storage Junction Temperature Range

TJ, Tstg

– 65 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

0.7

C/W

ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted)

Characteristic

Symbol

Min

Typical

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

VCEO(sus)

250

—

Vdc

Collector Cutoff Current

(VCE = 200 Vdc, IB = 0)

ICEO

—

100

Adc

(1) Pulse Test: Pulse Width = 5.0

s, Duty Cycle

≤

10%.

(continued)

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJL21193/D

Motorola, Inc. 1995

MJL21193

MJL21194

16 AMPERE

COMPLEMENTARY

SILICON POWER

TRANSISTORS

250 VOLTS

200 WATTS

*Motorola Preferred Device

PNP

NPN

CASE 340G–02

TO–3PBL

MJL21193 MJL21194

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted)

Characteristic

Symbol

Min

Typical

Max

Unit

OFF CHARACTERISTICS

Emitter Cutoff Current

(VCE = 5 Vdc, IC = 0)

IEBO

—

100

Adc

Collector Cutoff Current

(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)

ICEX

—

100

Adc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 50 Vdc, t = 1 s (non–repetitive)

(VCE = 80 Vdc, t = 1 s (non–repetitive)

IS/b

4.0

2.25

—

Adc

ON CHARACTERISTICS

DC Current Gain

(IC = 8 Adc, VCE = 5 Vdc)

(IC = 16 Adc, IB = 5 Adc)

hFE

—

Base–Emitter On Voltage

(IC = 8 Adc, VCE = 5 Vdc)

VBE(on)

—

2.2

Vdc

Collector–Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

(IC = 16 Adc, IB = 3.2 Adc)

VCE(sat)

—

1.4

Vdc

DYNAMIC CHARACTERISTICS

Total Harmonic Distortion at the Output

VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS

hFE

unmatched

(Matched pair hFE = 50 @ 5 A/5 V)

hFE

matched

THD

—

0.8

0.08

—

Current Gain Bandwidth Product

(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)

—

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

Cob

—

500

(1) Pulse Test: Pulse Width = 300

s, Duty Cycle

≤

IC COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain

Bandwidth Product

Figure 2. Typical Current Gain

Bandwidth Product

, CURRENT

GAIN BANDWIDTH PRODUCT

(MHz)

PNP MJL21193

, CURRENT

GAIN BANDWIDTH PRODUCT

(MHz)

NPN MJL21194

IC COLLECTOR CURRENT (AMPS)

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

1.0

0.1

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

0.1

1.0

VCE = 10 V

5 V

TJ = 25

ftest = 1 MHz

10 V

VCE = 5 V

TJ = 25

ftest = 1 MHz

MJL21193 MJL21194

Motorola Bipolar Power Transistor Device Data

Figure 3. DC Current Gain, VCE = 20 V

Figure 4. DC Current Gain, VCE = 20 V

Figure 5. DC Current Gain, VCE = 5 V

Figure 6. DC Current Gain, VCE = 5 V

h FE

, DC CURRENT

GAIN

IC COLLECTOR CURRENT (AMPS)

h FE

, DC CURRENT

GAIN

h FE

, DC CURRENT

GAIN

IC COLLECTOR CURRENT (AMPS)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 7. Typical Output Characteristics

I C

, COLLECT

OR CURRENT

(A)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 8. Typical Output Characteristics

I C

, COLLECT

OR CURRENT

(A)

PNP MJL21193

NPN MJL21194

h FE

, DC CURRENT

GAIN

TYPICAL CHARACTERISTICS

PNP MJL21193

NPN MJL21194

1000

100

1.0

0.1

1000

100

1.0

0.1

1000

100

1.0

0.1

1000

100

1.0

0.1

5.0

VCE = 20 V

TJ = 100

– 25

VCE = 20 V

TJ = 100

– 25

TJ = 100

– 25

VCE = 5 V

TJ = 100

– 25

VCE = 20 V

TJ = 25

1.5 A

IB = 2 A

1 A

0.5 A

IB = 2 A

1.5 A

1 A

0.5 A

MJL21193 MJL21194

Motorola Bipolar Power Transistor Device Data

BE(on)

, BASE–EMITTER VOL

TAGE (VOL

TS)

Figure 9. Typical Saturation Voltages

IC, COLLECTOR CURRENT (AMPS)

TURA

TION VOL

TAGE (VOL

TS)

Figure 10. Typical Saturation Voltages

IC, COLLECTOR CURRENT (AMPS)

TURA

TION VOL

TAGE (VOL

TS)

Figure 11. Typical Base–Emitter Voltage

IC, COLLECTOR CURRENT (AMPS)

Figure 12. Typical Base–Emitter Voltage

IC, COLLECTOR CURRENT (AMPS)

BE(on)

, BASE–EMITTER VOL

TAGE (VOL

TS)

There are two limitations on the power handling ability of a

transistor; average junction temperature and secondary

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to

greater dissipation than the curves indicate.

The data of Figure 13 is based on TJ(pk) = 200

C; TC is

variable depending on conditions. At high case tempera-

tures, thermal limitations will reduce the power than can be

handled to values less than the limitations imposed by

second breakdown.

PNP MJL21193

NPN MJL21194

TYPICAL CHARACTERISTICS

PNP MJL21193

NPN MJL21194

Figure 13. Active Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

I C

, COLLECT

OR CURRENT

(AMPS)

3.0

2.5

2.0

1.5

1.0

0.5

100

1.0

0.1

1.4

100

1.0

0.1

1.2

1.0

0.8

0.6

0.4

0.2

100

1.0

0.1

1.0

0.1

100

1.0

0.1

1.0

0.1

100

1.0

100

1000

1.0

0.1

TJ = 25

IC/IB = 10

VBE(sat)

VCE(sat)

TJ = 25

IC/IB = 10

VBE(sat)

VCE(sat)

TJ = 25

VCE = 20 V (SOLID)

VCE = 5 V (DASHED)

TJ = 25

VCE = 20 V (SOLID)

VCE = 5 V (DASHED)

TC = 25

1 SEC

MJL21193 MJL21194

Motorola Bipolar Power Transistor Device Data

Figure 14. MJL21193 Typical Capacitance

VR, REVERSE VOLTAGE (VOLTS)

C, CAP

ACIT

ANCE (pF)

Figure 15. MJL21194 Typical Capacitance

VR, REVERSE VOLTAGE (VOLTS)

C, CAP

ACIT

ANCE (pF)

AUDIO PRECISION

MODEL ONE PLUS

TOTAL HARMONIC

DISTORTION

ANALYZER

SOURCE

AMPLIFIER

Ω

0.5

Ω

0.5

Ω

8.0

Ω

–50 V

DUT

+50 V

Figure 16. Typical Total Harmonic Distortion

Figure 17. Total Harmonic Distortion Test Circuit

FREQUENCY (Hz)

T HD

, T

HARMONIC

DIST

TION (%)

10000

1000

100

1.0

0.1

10000

1000

100

1.0

0.1

1.2

1.1

1.0

0.9

0.8

0.7

0.6

100000

10000

1000

100

TC = 25

Cob

Cib

TC = 25

Cib

Cob

f(test) = 1 MHz)

MJL21193 MJL21194

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 340G–02

TO–3PBL

ISSUE E

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

DIM

MIN

MAX

MIN

MAX

INCHES

2.8

2.9

1.102

1.142

MILLIMETERS

19.3

20.3

0.760

0.800

4.7

5.3

0.185

0.209

0.93

1.48

0.037

0.058

1.9

2.1

0.075

0.083

2.2

2.4

0.087

0.102

5.45 BSC

0.215 BSC

2.6

3.0

0.102

0.118

0.43

0.78

0.017

0.031

17.6

18.8

0.693

0.740

11.0

11.4

0.433

0.449

3.95

4.75

0.156

0.187

2.2

2.6

0.087

0.102

3.1

3.5

0.122

0.137

2.15

2.35

0.085

0.093

6.1

6.5

0.240

0.256

2.8

3.2

0.110

0.125

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

0.25 (0.010)

T B

2 PL

3 PL

0.25 (0.010)

Y Q

–B–

–Q–

–Y–

–T–

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

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MJL21193/D

*MJL21193/D*

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