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3–212

Motorola Bipolar Power Transistor Device Data

Darlington Complementary

Silicon Power Transistors

. . . designed for general purpose and low speed switching applications.

•

High DC Current Gain – hFE = 2500 (typ.) @ IC = 5.0 Adc.

•

Collector Emitter Sustaining Voltage @ 30 mAdc:

VCEO(sus) = 80 Vdc (min.) — BDW46

VCEO(sus) =

100 Vdc (min.) — BDW42/BDW47

•

Low Collector Emitter Saturation Voltage

VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc

VCE(sat) =

3.0 Vdc (max.) @ IC = 10.0 Adc

•

Monolithic Construction with Built–In Base Emitter Shunt resistors

•

TO–220AB Compact Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

BDW46

ÎÎÎÎ

BDW42

BDW47

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

ÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎ

0.5

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation

@ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎ

0.68

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

– 55 to + 150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

ÎÎÎÎÎÎ

1.47

ÎÎÎ

C/W

100

125

150

Figure 1. Power Temperature Derating Curve

TC, CASE TEMPERATURE (

, POWER DISSIP

TION (W

TTS)

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BDW42/D

Motorola, Inc. 1995

BDW42

BDW46

BDW47

DARLINGTON

15 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

80 – 100 VOLTS

85 WATTS

*Motorola Preferred Device

CASE 221A–06

TO–220AB

NPN

PNP

REV 7

BDW42 BDW46 BDW47

3–213

Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

BDW46

BDW42/BDW47

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)

BDW46

(VCE = 50 Vdc, IB = 0)

BDW42/BDW47

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0)

BDW41/BDW46

(VCB = 100 Vdc, IE = 0)

BDW42/BDW47

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 5.0 Adc, VCE = 4.0 Vdc)

(IC = 10 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

1000

250

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 5.0 Adc, IB = 10 mAdc)

(IC = 10 Adc, IB = 50 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.0

3.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 10 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

3.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN (2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector

Current with Base Forward Biased

BDW42

VCE = 28.4 Vdc

VCE = 40 Vdc

BDW46/BDW47

VCE = 22.5 Vdc

VCE = 36 Vdc

ÎÎÎÎ

IS/b

ÎÎÎÎ

3.0

1.2

3.8

1.2

ÎÎÎÎ

—

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Magnitude of common emitter small signal short circuit current transfer ratio

(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎ

4.0

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

BDW42

BDW46/BDW47

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

200

300

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

300

ÎÎÎÎ

—

ÎÎÎ

(1) Pulse Test: Pulse Width = 300

s, Duty Cycle = 2.0%.

(2) Pulse Test non repetitive: Pulse Width = 250 ms.

Figure 2. Switching Times Test Circuit

5.0

0.1

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

TIME (

3.0

0.7

0.5

0.3

0.2

0.05

0.2

0.3

0.7

3.0

td @ VBE(off) = 0 V

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25

0.07

1.0

5.0

0.1

1.0

2.0

0.5

2.0

7.0

VCC

– 30 V

SCOPE

TUT

+ 4.0 V

tr, tf

10 ns

DUTY CYCLE = 1.0%

D1 MUST BE FAST RECOVERY TYPES, e.g.:

1N5825 USED ABOVE IB

[

100 mA

MSD6100 USED BELOW IB

[

100 mA

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

APPROX

+ 8.0 V

APPROX

– 12 V

[

8.0 k

[

150

for td and tr, D1 id disconnected

and V2 = 0

For NPN test circuit reverse all polarities

BDW42 BDW46 BDW47

3–214

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

r(t) EFFECTIVE

TRANSIENT

THERMAL

RESIST

ANCE (NORMALIZED)

0.05

0.1

0.2

0.5

1.0

2.0

5.0

100

200

1000

500

JC(t) = r(t) R

JC = 1.92

C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

0.03

0.3

3.0

300

ACTIVE–REGION SAFE OPERATING AREA

SECOND BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMITED

@ TC = 25

C (SINGLE PULSE)

1.0

Figure 5. BDW42

2.0

0.05

100

TJ = 25

BDW42

1.0 ms

0.1 ms

0.2

5.0

0.5

I C

, COLLECT

OR CURRENT

(AMP)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0

0.1

0.5 ms

2.0

3.0

5.0

7.0

Figure 6. BDW46 and BDW47

SECOND BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMITED

@ TC = 25

C (SINGLE PULSE)

1.0

2.0

0.05

100

TJ = 25

BDW46

BDW47

1.0 ms

0.1 ms

0.2

5.0

0.5

I C

, COLLECT

OR CURRENT

(AMP)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0

0.1

0.5 ms

2.0

3.0

5.0

7.0

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of the

transistor that must be observed for reliable operation; i.e., the

transistor must not be subjected to greater dissipation than the

curves indicate. The data of Fig. 5 and 6 is based on TJ(pk) =

200

C; TC is variable depending on conditions. Second break-

down pulse limits are valid for duty cycles to 10% provided

TJ(pk)

200

C. TJ(pk) may be calculated from the data in

Fig. 4. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the li-

mitations imposed by second breakdown.

* Linear extrapolation

10,000

1.0

Figure 7. Small–Signal Current Gain

f, FREQUENCY (kHz)

2.0

5.0

100

200

1000

500

300

100

5000

, SMALL–SIGNAL

CURRENT

GAIN

3000

200

500

2000

1000

BDW46, 47 (PNP)

BDW42 (NPN)

TJ = 25

VCE = 3.0 V

IC = 3.0 A

300

0.1

Figure 8. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

1.0

2.0

5.0

100

C, CAP

ACIT

ANCE (pF)

200

100

TJ = + 25

Cib

Cob

0.2

0.5

BDW46, 47 (PNP)

BDW42 (NPN)