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Motorola Bipolar Power Transistor Device Data

Complementary Silicon Plastic

Power Transistors

. . . designed for use in general–purpose amplifier and switching applications.

•

DC Current Gain Specified to 7.0 Amperes

hFE = 30–150 @ IC = 3.0 Adc — 2N6111, 2N6288

hFE

= 2.3 (Min) @ IC = 7.0 Adc — All Devices

•

Collector–Emitter Sustaining Voltage —

VCEO(sus) = 30 Vdc (Min) — 2N6111, 2N6288

VCEO(sus)

= 50 Vdc (Min) — 2N6109

VCEO(sus)

= 70 Vdc (Min) — 2N6107, 2N6292

•

High Current Gain — Bandwidth Product

fT = 4.0 MHz (Min) @ IC = 500 mAdc — 2N6288, 90, 92

= 10 MHz (Min) @ IC = 500 mAdc — 2N6107, 09, 11

•

TO–220AB Compact Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎ

2N6111

2N6288

ÎÎÎÎ

2N6109

ÎÎÎ

2N6107

2N6292

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

7.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

3.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎ

0.32

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

– 65 to + 150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

ÎÎÎÎÎÎ

3.125

ÎÎÎ

C/W

* Indicates JEDEC Registered Data.

100

120

160

Figure 1. Power Derating

TC, CASE TEMPERATURE (

, POWER DISSIP

TION (W

TTS)

140

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by 2N6107/D

2N6057 thru 2N6059

(See 2N6050)

Motorola, Inc. 1995

2N6107

2N6109

2N6111

2N6288

2N6292

*Motorola Preferred Device

7 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

30 – 50 – 70 VOLTS

40 WATTS

CASE 221A–06

TO–220AB

PNP

NPN

REV 2

2N6107 2N6109 2N6111 2N6288 2N6292

Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS

(TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 100 mAdc, IB = 0)

2N6111, 2N6288

2N6109

2N6107, 2N6292

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 20 Vdc, IB = 0)

2N6111, 2N6288

(VCE = 40 Vdc, IB = 0)

2N6109

(VCE = 60 Vdc, IB = 0)

2N6107, 2N6292

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)

2N6111, 2N6288

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)

2N6109

(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)

2N6107, 2N6292

(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150

2N6111, 2N6288

(VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150

2N6109

(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150

2N6107, 2N6292

ÎÎÎÎ

ICEX

ÎÎÎÎ

—

ÎÎÎÎ

100

2.0

ÎÎÎ

Adc

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 2.0 Adc, VCE = 4.0 Vdc)

2N6107, 2N6292

(IC = 2.5 Adc, VCE = 4.0 Vdc)

2N6109

(IC = 3.0 Adc, VCE = 4.0 Vdc)

2N6111, 2N6288

(IC = 7.0 Adc, VCE = 4.0 Vdc)

All Devices

ÎÎÎÎ

hFE

ÎÎÎÎ

2.3

ÎÎÎÎ

150

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 7.0 Adc, IB = 3.0 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

3.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 7.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

3.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain — Bandwidth Product (2)

(IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz)

2N6288, 92

2N6107, 09, 11

ÎÎÎÎ

4.0

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

250

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎ

—

* Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width

300

s, Duty Cycle

2.0%.

(2) fT = |hfe|

•

ftest.

Figure 2. Switching Time Test Circuit

+11 V

– 9.0 V

– 4 V

SCOPE

VCC

+ 30 V

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

D1 MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS

2.0

0.07

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

1.0

0.7

0.5

0.3

0.2

0.1

0.02

0.1

0.2

0.3

0.5

2.0

3.0

7.0

TJ = 25

VCC = 30 V

IC/IB = 10

0.05

TIME (

1.0

5.0

td @ VBE(off)

≈

5.0 V

0.07

0.03

2N6107 2N6109 2N6111 2N6288 2N6292

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t)

, TRANSIENT

THERMAL

RESIST

ANCE (NORMALIZED)

0.05

1.0

2.0

5.0

100

200

1.0 k

500

JC(t) = r(t) R

JC = 3.125

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

JC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02

0.1

0.5

0.2

1.0

Figure 5. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

7.0

5.0

2.0

0.15

5.0

CURRENT LIMIT

SECONDARY

BREAKDOWN LIMIT

THERMAL LIMIT

@ TC = 25

C (SINGLE PULSE)

7.0

I C

, COLLECT

OR CURRENT

(AMPS)

0.1 ms

1.0

0.5

0.2

0.3

2.0

3.0

0.5 ms

70 100

3.0

0.7

0.1

5.0 ms

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. TJ(pk) may be calculated from the data in Fig-

ure 4. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown.

300

0.5

VR, REVERSE VOLTAGE (VOLTS)

3.0

5.0

1.0

2.0

C, CAP

ACIT

ANCE (pF)

200

TJ = 25

Cib

100

Figure 6. Turn–Off Time

5.0

0.07

Figure 7. Capacitance

IC, COLLECTOR CURRENT (AMP)

3.0

2.0

1.0

0.7

0.5

0.3

0.05

0.1

0.2

0.3

0.5

2.0

3.0

7.0

TJ = 25

VCC = 30 V

IC/IB = 10

IB1 = IB2

0.1

TIME (

1.0

5.0

0.2

0.07

Cob

2N6107 2N6109 2N6111 2N6288 2N6292

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM

MIN

MAX

MIN

MAX

MILLIMETERS

INCHES

0.570

0.620

14.48

15.75

0.380

0.405

9.66

10.28

0.160

0.190

4.07

4.82

0.025

0.035

0.64

0.88

0.142

0.147

3.61

3.73

0.095

0.105

2.42

2.66

0.110

0.155

2.80

3.93

0.018

0.025

0.46

0.64

0.500

0.562

12.70

14.27

0.045

0.060

1.15

1.52

0.190

0.210

4.83

5.33

0.100

0.120

2.54

3.04

0.080

0.110

2.04

2.79

0.045

0.055

1.15

1.39

0.235

0.255

5.97

6.47

0.000

0.050

0.00

1.27

0.045

–––

1.15

–––

0.080

–––

2.04

2 3

SEATING

PLANE

–T–

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

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