NTE3302
Insulated Gate Bipolar Transistor
N–Channel Enhancement Mode,
High Speed Switch
Features:
D
High Input Impedance
D
High Speed
D
Low Saturation Voltage
D
Enhancement Mode
Applications:
D
High Power Switching
D
Motor Control
Absolute Maximum Raings: (T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage, V
CES
600V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Emitter Voltage, V
GES
±
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
DC
8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse (1ms)
16A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
°
C), P
C
30W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–55
°
to +150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate Leakage Current
I
GES
V
GE
=
±
20V, V
CE
= 0
–
–
±
500
nA
Collector Cutoff Current
I
CES
V
CE
= 600V, V
GE
= 0
–
–
1.0
mA
Collector–Emitter Breakdown Voltage
V
(BR)CES
I
C
= 2mA, V
GE
= 0
600
–
–
V
Gate–Emitter Cutoff Voltage
V
GE(off)
I
C
= 8mA, V
CE
= 5V
3.0
–
6.0
V
Collector–Emitter Saturation Voltage
V
CE(sat)
I
C
= 8A, V
GE
= 15V
–
3.0
4.0
V
Input Capacitance
C
ies
V
CE
= 10V, V
GE
= 0, f = 1MHz
–
650
–
pF
Rise Time
t
r
V
CC
= 300V
–
0.3
0.6
µ
s
Turn–On Time
t
on
–
0.4
0.8
µ
s
Fall Time
t
f
–
0.15
0.35
µ
s
Turn–Off Time
t
off
–
0.5
1.0
µ
s
