NTE2968
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D
Avalanche Rugged Technology
D
Rugged Gate Oxide Technology
D
Low Input Capacitance
D
Improved Gate Charge
D
Extended Safe Operating Area
D
Lower Leakage Current
D
Low Static Drain–Source On–State Resistance
Absolute Maximum Ratings:
Drain–Source Voltage, V
DSS
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, I
D
Continuous
T
C
= +25
°
C
45A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
°
C
27.8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 1)
180A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage, V
GS
±
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current (Pulsed), I
GM
±
1.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Energy (Note 2), E
AS
675mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Current (Note 1), I
AS
45A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Avalanche Energy (Note 1), E
AR
27.8mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Diode Recovery dv/dt (Note 3), dv/dt
5.0V/ns
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
°
C), P
D
278W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
2.22W/
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
–55
°
to +150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–55
°
to +150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
L
+300
°
C
. . . . . . . . . . . . . .
Thermal Resistance:
Maximum Junction–to–Case, R
thJC
0.45
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Case–to–Sink, R
thCS
0.24
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Junction–to–Ambient, R
thJA
40
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 0.5mH, I
AS
= 45A, V
DD
= 25V, R
G
= 25
Ω
, Starting T
J
= +25
°
C.
Note 3. I
SD
≤
45A, di/dt
≤
370A/
µ
s, V
DD
≤
BV
DSS
, Starting T
J
= +25
°
C.
Electrical Characteristics: (T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
µ
A
200
–
–
V
Breakdown Voltage Temperature
Coefficient
D
BV/
D
T
J
I
D
= 250
µ
A
–
0.20
–
V/
°
C
Gate Threshold Voltage
V
GS(th)
V
DS
= 5V, I
D
= 250
µ
A
2.0
–
4.0
V
Gate–Source Leakage Forward
I
GSS
V
GS
= 30V
–
–
100
nA
Gate–Source Leakage Reverse
I
GSS
V
GS
= –30V
–
–
–100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 200V, V
GS
= 0
–
–
10
µ
A
V
DS
= 160V, T
C
= +150
°
C
–
–
100
µ
A
Static Drain–Source ON Resistance
R
DS(on)
V
GS
= 10V, I
D
= 22.5A, Note 4
–
–
0.065
Ω
Forward Transconductance
g
fs
V
DS
= 40V, I
D
= 22.5A, Note 4
–
25.06
–
mhos
Input Capacitance
C
iss
V
GS
= 0V, V
DS
= 25V, f = 1MHz
–
3030
3940
pF
Output Capacitance
C
oss
–
530
610
pF
Reverse Transfer Capacitance
C
rss
–
255
295
pF
Turn–On Delay Time
t
d(on)
V
DD
= 100V
,
I
D
= 45A, R
G
= 5.3
Ω
,
–
22
60
ns
Rise Time
t
r
Note 4, Note 5
–
22
60
ns
Turn–Off Delay Time
t
d(off)
–
79
170
ns
Fall Time
t
f
–
36
80
ns
Total Gate Charge
Q
g
V
GS
= 10V, I
D
= 45A, V
DS
= 160V,
–
117
152
nC
Gate–Source Charge
Q
gs
Note 4, Note 5
–
25
–
nC
Gate–Drain (“Miller”) Charge
Q
gd
–
48.8
–
nC
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
I
S
(Body Diode)
–
–
45
A
Pulse Source Current
I
SM
(Body Diode) Note 1
–
–
180
A
Diode Forward Voltage
V
SD
T
J
= +25
°
C, I
S
= 45A, V
GS
= 0V, Note 4
–
–
1.5
V
Reverse Recovery Time
t
rr
T
J
= +25
°
C, I
F
= 45A, dI
F
/dt = 100A/
µ
s
–
210
–
ns
Reverse Recovery Charge
Q
rr
–
1.67
–
µ
C
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width
≤
250
µ
s, Duty Cycle
≤
2%.
Note 5. Essentially independent of operating temperature.
