NTE268 (NPN) & NTE269 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202
type package designed for amplifier and driver applications where high gain is an essential require-
ment, low power lamp and relay drivers and power drivers for high–current applications such as volt-
age regulators.
Features:
D
Low Collector–Emitter Saturation Voltage: V
CE(sat)
= 1.5V Max @ I
C
= 1.5A
D
TO202 Type Package: 2W Free Air Dissipation @ T
A
= +25
°
C
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CES
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
13V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Colllector Current, I
C
Continuous
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 2)
3A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, I
B
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25
°
C), P
D
1.67W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C (Note 3)
13.3mW/
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
°
C), P
D
10W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
80mW/
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
–55
°
to +150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–55
°
to +150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
75
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
12.5
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. The NTE268 is a discontinued device and no longer available.
Note 2. Pulse Width
≤
25ms, Duty Cycle
≤
50%.
Note 3. The actual power dissipation capability of the TO202 type package is 2W @ T
A
= +25
°
C.
Electrical Characteristics: (T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 10mA, Note 4
50
–
–
V
Collector Cutoff Current
I
CBO
V
CB
= 50V, I
E
= 0, T
J
= +150
°
C
–
–
20
µ
A
I
CES
V
CE
= 50V, V
BE
= 0
–
–
0.5
µ
A
Emitter Cutoff Current
I
EBO
V
EB
= 13V, I
C
= 0
–
–
100
nA
ON Characteristics (Note 4)
DC Current Gain
h
FE
I
C
= 200mA, V
CE
= 5V
10000
–
–
I
C
= 1.5A, V
CE
= 5V
1000
–
–
Collector–Emitter Saturation Voltage
V
CE(sat)
I
C
= 1.5A, I
B
= 3mA
–
–
1.5
V
Base–Emitter Saturation Voltage
V
BE(sat)
I
C
= 1.5A, I
B
= 3mA
–
–
2.5
V
Dynamic Characteristics
Collector Capacitance
NTE268
C
cb
V
CB
= 10V, I
E
= 0, f = 1MHz
–
–
10
pF
NTE269
–
–
25
pF
High Frequency Current Gain
|h
fe
|
I
C
= 20mA, V
CE
= 5V, f = 100MHz
1.0
–
–
Note 4. Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2%.
NTE268
NTE269
B
C
E
B
C
E
.070 (1.78) x 45
°
Chamf
.132 (3.35) Dia
.050 (1.27)
.325
(9.52)
.180 (4.57)
.380 (9.56)
.500
(12.7)
1.200
(30.48)
Ref
.300
(7.62)
.400
(10.16)
Min
.100 (2.54)
.100 (2.54)
C
E
B
C