NTE2641
Silicon NPN Transistor
Horizontal Deflection Output for
High Resolution Displays & Color TVs
Features:
D
High Voltage: V
CBO
= 1500V
D
Low Saturation Voltage: V
CE(sat)
= 3V Max
D
High Speed: t
f
= 0.1
µ
s Typ
Absolute Maximum Ratings: (T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
1500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
750V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous DC
17A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse
34A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
8.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
°
C), P
C
75W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–55
°
to +150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 1500V, I
E
= 0
–
–
1
mA
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
–
–
100
µ
A
Collector–Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 10mA, I
B
= 0
750
–
–
V
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 2A
22
–
48
V
CE
= 5V, I
C
= 7A
9
–
18
V
CE
= 5V, I
C
= 14A
5
–
8
Collector–Emitter Saturation Voltage
V
CE(sat)
I
C
= 14A, I
B
= 3.5A
–
–
3
V
Base–Emitter Saturation Voltage
V
BE(sat)
I
C
= 14A, I
B
= 3.5A
–
1.0
1.5
V
Transition Frequency
f
T
V
CE
= 10V, I
C
= 0.1A
–
2
–
MHz
Collector Output Capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
–
240
–
pF