NTE2592
Silicon NPN Transistor
Horizontal Output for HDTV
Features:
D
High Breakdown Voltage: V
(BR)CBO
= 2000V Min
D
Isolated TO220 Type Package
Absolute Maximum Ratings: (T
C
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
2000V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
1800V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
15mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
2W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature Range, T
J
+150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–55
°
to +150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, Junction–to–Case, R
thJC
8.3
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 1800V, I
E
= 0
–
–
1
µ
A
Emitter Cutoff Current
I
EBO
V
EB
= 4V, I
C
= 0
–
1
µ
A
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 300
µ
A
10
–
60
Gain Bandwidth Product
f
T
V
CE
= 10V, I
C
= 300
µ
A
–
6
–
MHz
Collector–Emitter Saturation Voltage
V
CE(sat)
I
C
= 600
µ
A, I
B
= 120
µ
A
–
–
5
V
Base–Emitter Saturation Voltage
V
BE(sat)
I
C
= 600
µ
A, I
B
= 120
µ
A
–
–
2
V
Collector–Base Breakdown Voltage
V
(BR)CBO
I
C
= 100
µ
A, I
E
= 0
2000
–
–
V
Collector–Emitter Breakdown Voltage V
(BR)CEO
I
C
= 100
µ
A, R
BE
=
∞
1800
–
–
V
Emitter–Base Breakdown Voltage
V
(BR)EBO
I
E
= 10
µ
A, I
C
= 0
5
–
–
V
Output Capacitance
C
ob
V
CB
= 100V, f = 1MHz
–
1.8
–
pF
