NTE2578
Silicon NPN Transistor
TV Horizontal Deflection Output
Features:
D
Excellent Fall Time Permitting Efficient Drive with Less Internal Dissipation
Absolute Maximum Ratings: (T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
200V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
4.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
C
= +25
°
C), P
C
30W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–55
°
to +150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 40V, I
E
= 0
–
–
0.1
mA
Emitter Cutoff Current
I
EBO
V
EB
= 5V, I
C
= 0
–
–
0.1
mA
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 1A
30
–
60
V
CE
= 5V, I
C
= 4A
25
–
–
Gain Bandwidth Product
f
T
V
CE
= 5V, I
C
= 1A
–
10
–
MHz
Collector–Emitter Saturation Voltage
V
CE(sat)
I
C
= 4A, I
B
= 400mA
–
0.5
1.0
V
Base–Emitter Saturation Voltage
V
BE(sat)
I
C
= 4A, I
B
= 400mA
–
–
1.5
V
Collector–Base Breakdown Voltage
V
(BR)CBO
I
C
= 5mA, I
E
= 0
200
–
–
V
Collector–Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 5mA, R
BE
=
∞
60
–
–
V
Emitter–Base Breakdown Voltage
V
(BR)EBO
I
C
= 5mA, I
C
= 0
6
–
–
V
Fall Time
t
f
V
CC
= 50V, V
BB
= 5V,
I
C
= 5A, I
B1
= –I
B2
= 500mA,
PW = 20
µ
s, Duty Cycle
≤
2.5%
–
0.2
0.5
µ
s
