NTE2401
Silicon PNP Transistor
RF Stages in FM Front Ends
Description:
The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed
for use in RF stages in FM front–ends in common base configuration for SMD applications.
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
30V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
4V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Collector Current, I
C
25mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
≤
+25
°
C, Note 1), P
tot
300mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–55
°
to +150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient (Note 1), R
thJA
430K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (T
J
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
= 30V, I
E
= 0
–
–
50
nA
Emitterr Cutoff Current
I
EBO
V
EB
= 4V, I
C
= 0
–
–
10
µ
A
Base Current
I
B
V
CE
= 10V, I
C
= 4mA
–
80
160
µ
A
V
CE
= 10V, I
C
= 1mA
–
22
–
µ
A
Base–Emitter Voltage
V
BE
V
CE
= 10V, I
C
= 4mA
–
0.76
–
V
Transition Frequency
f
T
V
CE
= 10V, I
C
= 1mA
–
350
–
MHz
V
CE
= 10V, I
C
= 4mA
–
450
–
MHz
V
CE
= 10V, I
C
= 8mA
–
440
–
MHz
Feedback Capacitance
C
rb
V
CE
= 10V, V
EB
= 0
–
0.1
–
pF
Noise Factor
F
V
CE
= 10V, I
C
= 2mA, G
s
= 16.7mS
–
3.0
–
dB
V
CE
= 10V, I
C
= 5mA, G
s
= 6.7mS,
jB
s
= 5mS
–
3.5
–
dB
Electrical Characteristics (Cont’d): (T
J
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
y–parameters (common base)
Input Conductance
g
ib
V
CB
= 10V, I
C
= 4mA,
f = 100MHz
–
125
–
mS
Input Capacitance
C
ib
–
64
–
pF
Transfer Admittance
|y
fb
|
–
100
–
mS
Phase Angle of Transfer Admittance
ϕ
fb
–
147
–
°
Output Conductance
g
ob
–
40
–
µ
S
Output Capacitance
C
ob
–
1.25
–
pF
Feedback Admittance
|y
rb
|
–
220
–
µ
S
Phase Angle of Feedback Admittance
ϕ
rb
–
85
–
°
.098
(2.5)
Max
.074 (1.9)
.118 (3.0) Max
.051
(1.3)
.043 (1.1)
.007 (0.2)
.016 (0.48)
.037 (0.95)
B
C
E