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BZX84C2V4W
THRU
BZX84C39W
Silicon
200 mWatt
Zener Diodes
Features
l
Planar Die construction
l
200mW Power Dissipation
l
Zener Voltages from 2.4V - 39V
l
Ideally Suited for Automated Assembly Processes
.
Mechanical Data
l
Case: SOT-23, Plastic
l
Terminals: solderable per MIL-STD-202, Methode 208
l
Weight: 0.008 grams (approx.)
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Zener Current I
F
100 mA
Maximum Forward
Voltage
V
F
1.2 V
Power Dissipation
(Note 1)
P
(AV)
200 mWatt
Operation And
Storage
Temperature
T
J
, T
STG
-55
o
C to
+150
o
C
Peak Foreard
Surge I
FSM
2.0 A
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  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
Current 8.3mS
half
NOTES:
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or
equivalent square wave, duty cycle = 4 pulses per
minute maximum.
SOT-323
Suggested Solder
Pad Layout
DIMENSIONS
A
B
C
D
E G
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A .070 .087 1.80 2.20
B .078 .087 2.00 2.20
C .045 .054 1.15 1.35
D .047 .056 1.20 1.40
E --- .004 --- .10
F .0078 .0160 .20 .40
G .035 .044 .90 1.10
H .002 .006 .05 .15
I .010 --- .25 ---
F
H
I
.075
1.90
inches
mm
.031
.800
.047
1.20
.026
.650
.026
.650
.024
.600
.118
3.00
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BZX84C2V4W thru BZX84C39W
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.com
M C C
NOTE:
1.Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
2.Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
3.Zener Voltage (V
Z
) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (T
L
) at 30
O
C, from the diode body.
4.Zener Impedance (Z
Z
) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an AC current having an rms value equal to 10% of the dc zener
current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
.
5.Surge Current (I
R
) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine
wave pulse of 1/120 second duration superimposed on the test current, I
ZT
, per JEDEC registration; however, actual device capability is as described in Figure 5.
Nom. V Min. V Max. V Ohm mA Ohm mA uA V
BZX84C2V4W
W1
2.4
2.28
2.52
100
5
600
1
50
1
BZX84C2V7W
W2
2.7
2.5
2.9
100
5
600
1
20
1
BZX84C3W
W3
3
2.8
3.2
95
5
600
1
10
1
BZX84C3V3W W4 3.3 3.1 3.5 95 5 600 1 5.0 1
BZX84C3V6W W5 3.6 3.4 3.8 90 5 600 1 5.0 1
BZX84C3V9W
W6
3.9
3.7
4.1
90
5
600
1
3.0
1
BZX84C4V3W
W7
4.3
4
4.6
90
5
600
1
3.0
1
BZX84C4V7W
W8
4.7
4.4
5
80
5
500
1
3.0
2
BZX84C5V1W
W9
5.1
4.8
5.4
60
5
480
1
2.0
2.0
BZX84C5V6W
WA
5.6
5.2
6
40
5
400
1
1.0
2.0
BZX84C6V2W WB 6.2 5.8 6.6 10 5 150 1 3.0 4.0
BZX84C6V8W
WC
6.8
6.4
7.2
15
5
80
1
2.0
4.0
BZX84C7V5W
WD
7.5
7
7.9
15
5
80
1
1.0
5
BZX84C8V2W
WE
8.2
7.7
8.7
15
5
80
1
0.7
5
BZX84C9V1W
WF
9.1
8.5
9.6
15
5
100
1
0.5
6
BZX84C10W
WG
10
9.4
10.6
20
5
150
1
0.2
7.0
BZX84C11W
WH
11
10.4
11.6
20
5
150
1
0.1
8.0
BZX84C12W
WI
12
11.4
12.7
25
5
150
1
0.1
8.0
BZX84C13W
WK
13
12.4
14.1
30
5
170
1
0.1
8.0
BZX84C15W
WL
15
13.8
15.6
30
5
200
1
0.1
10.5
BZX84C16W
WM
16
15.3
17.1
40
5
200
1
0.1
11.2
BZX84C18W
WN
18
16.8
19.1
45
5
225
1
0.1
12.6
BZX84C20W
WO
20
18.8
21.2
55
5
225
1
0.1
14.0
BZX84C22W
WP
22
20.8
23.3
55
5
250
1
0.1
15.4
BZX84C24W
WR
24
22.8
25.6
70
5
250
1
0.1
16.8
BZX84C27W
WS
27
25.1
28.9
80
5
300
1
0.1
18.9
BZX84C30W
WT
30
28
32
80
5
300
1
0.1
21.0
BZX84C33W
WU
33
31
35
80
5
325
1
0.1
23.1
BZX84C36W
WW
36
34
38
90
5
350
1
0.1
25.2
BZX84C39W
WX
39
37
41
130
5
350
1
0.1
27.3
ELECTRICAL CHARACTERISTICS (TA=25 degree C unless otherwise noted) VF=1.2V max, IF=100mA for all types.
I
R
@ V
R
Max.Reverse
Leakage Current
Marking
Code
Type
Nimber
Vz @ Iz
T
Nominal Zener Voltage
Zz
T
@ Iz
T
Zz
K
@ Iz
K
Max. Zener Impedance
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BZX84C2V4W thru BZX84C39W
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.com
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TYPICAL REVERSE CURRENT
TEMPERA
TURE
COEFFICIENT
,mV
/
C)
o
NOMINAL ZENER VOLTAGE, Volts
-1
0
1
2
3
4
5
6
7
8
12
11
10
9
8
7
6
5
4
3
2
-2
-3
STEADY STATE POWER DERATING
EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE
100
10
1
1000
100
10
1
IZ = 1 mA
5 mA
20 mA
DYNAMIC
IMPEDANCE,
W
NORMAL ZENER VOLTAGE, Volts
T
J
=25 C
O
I
Z(AC)=0.1
I
F=1 kHZ
Z(DC)
FOR
W
ARD
CURRENT
,m
A
TYPICAL FORWARD VOLTAGE
FORWARD VOLTAGE, Volts
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1000
100
10
1
75 C
O
5 C
O
25 C
O
150 C
O
TYPICAL CAPACITANCE
100
1000
100
10
1
10
1
BIAS AT
50% OF VZ NOM
0 V BIAS
1 V BIAS
CAP
ACIT
ANCE,
pF
NOMINAL ZENER VOLTAGE, Volts
T =25 C
A
o
100
10
1
NOMINAL ZENER VOLTAGE, Volts
TEMPERA
TURE
COEFFICIENT
,mV
/
C)
o
10
100
TEMPERATURE ( C)
o
POWER
DISSIP
AT
ION,
W
atts
STEADY STATE POWER DERATING
1.2
1.0
0.8
0.6
0.4
0.2
0
150
125
100
75
50
25
P
D V
.
S
. T
A
155
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BZX84C2V4W thru BZX84C39W
ZENER VOLTAGE V.S. ZENER CURRENT
TYPICAL LEAKGE CURRENT
90
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001
80
70
60
50
40
30
20
10
0
LEAKAGE
CURRENT
(
A)m
NOMINAL ZENER VOLTAGE, Vlots
+150 C
O
+25 C
O
-55 C
O
12
100
10
1
0.1
0.01
10
8
6
4
2
0
ZENER
CURRENT
,m
A
ZENER VOLTAGE, Volts
T =25 C
A
o
100
10
1
0.1
0.0110
30
50
70
90
T =25 C
A
o
ZENER VOLTAGE, Volts
ZENER VOLTAGE V.S. ZENER CURRENT
ZENER
CURRENT
,m
A