Specifications subject to change without notice.
•
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Typical Performance @ 25°C
Guaranteed
Characteristics
Typical
0
°°°°
to 50
°°°°
C
-54
°°°°
to +85
°°°°
C
Frequency
Small Signal Gain (min.)
Gain Flatness (max.)
Reverse Isolation
Noise Figure (max.)
Power Output @ 1 dB comp. (min.)
IP3
IP2
Second Order Harmonic IP
VSWR Input / Output (max.)
DC Current @
Absolute Maximum Ratings
Storage Temperature
Max. Case Temperature
Max. DC Voltage
Max. Continuous RF Input Power
Max. Short Term RF Input Power (1 minute max.)
Max. Peak Power (3
µ
sec max.)
“S” Series Burn-in Temperature (Case)
Thermal Data: V
cc
=
Thermal Resistance
θ
jc
Transistor Power Dissipation P
d
Junction Temperature Rise Above Case T
jc
Outline Drawings
Package TO-8 Surface Mount SMA Connectorized
Figure
Model
· HIGH GAIN - TWO STAGES: 26.0 dB (TYP.)
· LOW NOISE: <3.0 dB (TYP.)
· HIGH EFFICIENCY: 16 mA (TYP.) AT 5 VOLTS
A66-3/SMA66-3
10 TO 1000 MHz
CASCADABLE AMPLIFIER
Specifications (Rev. Date: 6/01)*
* Measured in a 50-ohm system at +5 Vdc Nominal. Subject to change without notice.
BG
AA
CE
5-1100 MHz
26.0 dB
±0.4 dB
36 dB
3.0 dB
3.0 dBm
+13 dBm
+32 dBm
+37 dBm
1.3:1 / 1.3:1
16 mA
10-1000 MHz
24.5 dB
±0.7 dB
1.0 dBm
3.5 dB
1.5 dBm
2.0:1 / 2.0:1
19 mA
1.8:1 / 1.8:1
18 mA
10-1000 MHz
24.0 dB
±1.0 dB
4.0 dB
-62° to +125°C
125°C
+10 Volts
+10 dBm
50 mW
0.5 W
125°C
170°C/W
0.016 W
3°C
A66-3
SMA66-3
CA66-3
5 Volts (max.)
5 Vdc