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3.1 - 65
3.1
50V And 60V Ultra Low R
DS(on)
Power MOSFETs In TO-257 And TO-254
Isolated Packages
4 11 R1
Supersedes 3 02 R0
LOW VOLTAGE, LOW R
DS(on)
POWER MOSFETS
IN HERMETIC ISOLATED PACKAGE
FEATURES
• Isolated Hermetic Metal Packages
• Ultra Low R
DS(on)
• Low Conductive Loss/Low Gate Charge
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetic packaged MOSFETs are ideally suited for low voltage
applications; battery powered voltage power supplies, motor controls, dc to dc
converters and synchronous rectification. The low conduction loss allows smaller
heat sinking and the low gate charge simpler drive circuitry.
MAXIMUM RATINGS
(Per Device)
OM50N06ST
OM50N05ST
OM60N05SA
OM50N05SA
OM60N06SA
OM50N06SA
PART NO.
V
DS
(V)
R
DS(on)
( )
I
D
(A)
Package
OM60N06SA
60
.025
60
TO-254AA
OM50N06SA
60
.030
50
TO-254AA
OM50N06ST
60
.035
50
TO-257AA
OM60N05SA
50
.025
60
TO-254AA
OM50N05SA
50
.030
50
TO-254AA
OM50N05ST
50
.035
50
TO-257AA
SCHEMATIC
T-3 PIN
CONNECTION
M-PAK PIN
CONNECTION
Drain
Source
Gate
1 2 3
1
2
3
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
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3.1 - 66
OM60N06SA - OM50N05ST
3.1
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
50N06ST
50N05ST
Parameter
60N06SA
50N05SA
60N05SA
50N05SA
Units
V
DS
Drain-Source Voltage
60
60
50
50
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 M )
60
60
50
50
V
I
D
@ T
C
= 25°C
Continuous Drain Current
2
55
50
55
50
A
I
D
@ T
C
= 100°C
Continuous Drain Current
2
37
33
37
33
A
I
DM
Pulsed Drain Current
1
220
200
220
200
A
P
D
@ T
C
= 25°C
Maximum Power Dissipation
100
100
100
100
W
P
D
@ T
C
= 100°C
Maximum Power Dissipation
40
40
40
40
W
Junction-To-Case
Linear Derating Factor
1
.80
.80
.80
.80
W/°C
T
J
Operating and
T
stg
Storage Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Lead Temperature (1/16" from case for 10 secs.)
300
300
300
300
°C
1 Pulse Test: Pulse width 300 µsec. Duty Cycle 1.5%.
2 Package Limited SA I
D
= 25 A, SC SC I
D
= 35 A @ 25
C
THERMAL RESISTANCE
R
thJC
Junction-to-Case
1.25
°C/W
PACKAGE LIMITATIONS
Parameters
TO254AA
TO-257AA
Unit
I
D
Continuous Drain Current
25
15
A
Linear Derating Factor, Junction-to-Ambient
.020
.015
W/°C
R
thJA
Thermal Resistance, Junction-to-Ambient (Free Air Operation)
50
65
°C/W
Linear Derating, Junction-to-Case
0.8
0.8
W/°C
.144 DIA.
.050
.040
.260
.249
.685
.665
.800
.790
.545
.535
.550
.510
.045
.035
.550
.530
.150 TYP.
.150 TYP.
.005
.430
.410
.200
.190
.038 MAX.
.005
.120 TYP.
.537
.527
.665
.645
.420
.410
.150
.140
.750
.500
.100 TYP.
.035
.025
.045
.035
T-3 MECHANICAL OUTLINE
M-PAK MECHANICAL OUTLINE
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
Notes:
• Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the
part number. Example - OMXXXXCSA.
• MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information.
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3.1 - 67
OM60N06SA - OM50N05ST
3.1
OM60N06SA
(T
C
= 25°C unless otherwise specified)
Avalanche Characteristics
Min.
Typ.
Max.
Units
Test Conditions
I
AR
Avalanche Current
55
A
(repetitive or
non-repetitive,T
J
= 25°C)
E
AS
Single Pulse Avalanche Energy
520
mJ
(starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
E
AR
Repetitive Avalanche Energy
130
mJ
(pulse width limited
by T
j max
,
d
< 1%)
I
AR
Avalanche Current
34
A
(repetitive or
non-repetitive, T
J
= 100°C)
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
60
V
I
D
= 250 µA, V
GS
= 0
Breakdown Voltage
I
DSS
Zero Gate Voltage
250
µA
V
DS
= Max. Rat.
Drain Current (V
GS
= 0)
1000
µA
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
I
GSS
Gate-Body Leakage
±100
nA
V
GS
= ±20 V
Current (V
DS
= 0)
Electrical Characteristics - ON*
V
GS(th)
Gate Threshold Voltage
2
4
V
V
DS
= V
GS
, I
D
= 250 µA
R
DS(on)
Static Drain-Source On
.025
V
GS
= 10 V, I
D
= 30 A
Resistance
.050
T
C
= 100°C
I
D(on)
On State Drain Current
55
A
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
Electrical Characteristics - Dynamic
g
fs
Forward Transconductance
16
S
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 30 A
C
ies
Input Capacitance
2500
pF
V
DS
= 25 V
C
oes
Output Capacitance
950
pF
V
GS
= 0
C
res
Reverse Transfer Capacitance
250
pF
f = 1 mHz
Electrical Characteristics - Switching On
T
d(on)
Turn-On Time
110
nS
V
DD
= 25 V, I
D
= 55 A
t
r
Rise Time
300
nS
R
G
= 50
, V
GS
= 10 V
(di/dt)
on
Turn-On Current Slope
160
A/µS
V
DD
= 40 V, I
D
= 55 A
R
G
= 50
, V
GS
= 10 V
Q
g
Total Gate Charge
65
nC
V
DD
= 25 V, I
D
= 30 A, V
GS
= 10 V
Electrical Characteristics - Switching Off
T
r(Voff)
Off Voltage Rise Time
160
nS
V
DD
= 40 V, I
D
= 55 A
t
f
Fall Time
160
nS
R
G
= 50
, V
GS
= 10 V
t
cross
Cross-Over Time
320
440
nS
Electrical Characteristics - Source Drain Diode
I
SD
Source Drain Current
55
A
I
SDM
*
Source Drain Current (pulsed)
200
A
V
SD
Forward On Voltage
1.6
V
I
SD
= 55 A, V
GS
= 0
t
rr
Reverse Recovery Time
100
nS
I
SD
= 55 A, di/dt = 100 A/µs
V
R
= 25 V,
T
j
= 150°C
Q
rr
Reverse Recovery Charge
.25
µC
I
RRM
Reverse Recovery Current
5
A
*Pulsed: Pulse Duration
300µS, Duty Cycle
1.5%.
OM50N06SA
(T
C
= 25°C unless otherwise specified)
Avalanche Characteristics
Min.
Typ.
Max.
Units
Test Conditions
I
AR
Avalanche Current
50
A
(repetitive or
non-repetitive,T
J
= 25°C)
E
AS
Single Pulse Avalanche Energy
400
mJ
(starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
E
AR
Repetitive Avalanche Energy
100
mJ
(pulse width limited
by T
j max
,
d
< 1%)
I
AR
Avalanche Current
30
A
(repetitive or
non-repetitive, T
J
= 100°C)
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
60
V
I
D
= 250 µA, V
GS
= 0
Breakdown Voltage
I
DSS
Zero Gate Voltage
250
µA
V
DS
= Max. Rat.
Drain Current (V
GS
= 0)
1000
µA
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
I
GSS
Gate-Body Leakage
±100
nA
V
GS
= ±20 V
Current (V
DS
= 0)
Electrical Characteristics - ON*
V
GS(th)
Gate Threshold Voltage
2
4
V
V
DS
= V
GS
, I
D
= 250 µA
R
DS(on)
Static Drain-Source On
.028
V
GS
= 10 V, I
D
= 25 A
Resistance
.056
T
C
= 100°C
I
D(on)
On State Drain Current
50
A
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
Electrical Characteristics - Dynamic
g
fs
Forward Transconductance
17
S
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 25 A
C
ies
Input Capacitance
2000
pF
V
DS
= 25 V
C
oes
Output Capacitance
1000
pF
V
GS
= 0
C
res
Reverse Transfer Capacitance
300
pF
f = 1 mHz
Electrical Characteristics - Switching On
T
d(on)
Turn-On Time
45
nS
V
DD
= 25 V, I
D
= 29 A
t
r
Rise Time
90
nS
R
G
= 4.7
, V
GS
= 10 V
(di/dt)
on
Turn-On Current Slope
200
A/µS
V
DD
= 40 V, I
D
= 50 A
R
G
= 50
, V
GS
= 10 V
Q
g
Total Gate Charge
45
nC
V
DD
= 40 V, I
D
= 50 A, V
GS
= 10 V
Electrical Characteristics - Switching Off
T
r(Voff)
Off Voltage Rise Time
160
nS
V
DD
= 40 V, I
D
= 50 A
t
f
Fall Time
90
nS
R
G
= 50
, V
GS
= 10 V
t
cross
Cross-Over Time
250
nS
Electrical Characteristics - Source Drain Diode
I
SD
Source Drain Current
50
A
I
SDM
*
Source Drain Current (pulsed)
200
A
V
SD
Forward On Voltage
2
V
I
SD
= 50 A, V
GS
= 0
t
rr
Reverse Recovery Time
150
nS
I
SD
= 50 A, di/dt = 100 A/µs
V
R
= 30 V,
T
j
= 150°C
Q
rr
Reverse Recovery Charge
0.2
µC
I
RRM
Reverse Recovery Current
4
A
*Pulsed: Pulse Duration
300µS, Duty Cycle
1.5%.
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3.1 - 68
OM60N06SA - OM50N05ST
3.1
OM50N06ST
(T
C
= 25°C unless otherwise specified)
Avalanche Characteristics
Min.
Typ. Max. Units Test Conditions
I
AR
Avalanche Current
50
A
(repetitive or
non-repetitive,T
J
= 25°C)
E
AS
Single Pulse Avalanche Energy
400
mJ
(starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
E
AR
Repetitive Avalanche Energy
100
mJ
(pulse width limited
by T
j max
,
d
< 1%)
I
AR
Avalanche Current
30
A
(repetitive or
non-repetitive, T
J
= 100°C)
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
60
V
I
D
= 250 µA, V
GS
= 0
Breakdown Voltage
I
DSS
Zero Gate Voltage
250
µA
V
DS
= Max. Rat.
Drain Current (V
GS
= 0)
1000
µA
V
DS
= Max. Rat. x 0.8, T
C
= 125°C
I
GSS
Gate-Body Leakage
±100
nA
V
GS
= ±20 V
Current (V
DS
= 0)
Electrical Characteristics - ON*
V
GS(th)
Gate Threshold Voltage
2
4
V
V
DS
= V
GS
, I
D
= 250 µA
R
DS(on)
Static Drain-Source On
.033
V
GS
= 10 V, I
D
= 25 A
Resistance
.066
T
C
= 100°C
I
D(on)
On State Drain Current
50
A
V
DS
> I
D(on)
x R
DS(on)max
, V
GS
= 10 V
Electrical Characteristics - Dynamic
g
fs
Forward Transconductance
17
S
V
DS
> I
D(on)
x R
DS(on)max
, I
D
= 25 A
C
ies
Input Capacitance
2000
pF
V
DS
= 25 V
C
oes
Output Capacitance
1000
pF
V
GS
= 0
C
res
Reverse Transfer Capacitance
300
pF
f = 1 mHz
Electrical Characteristics - Switching On
T
d(on)
Turn-On Time
45
nS
V
DD
= 25 V, I
D
= 29 A
t
r
Rise Time
90
nS
R
G
= 4.7 , V
GS
= 10 V
(di/dt)
on
Turn-On Current Slope
200
A/µS
V
DD
= 40 V, I
D
= 50 A
R
G
= 50 , V
GS
= 10 V
Q
g
Total Gate Charge
45
nC
V
DD
= 40 V, I
D
= 50 A, V
GS
= 10 V
Electrical Characteristics - Switching Off
T
r(Voff)
Off Voltage Rise Time
160
nS
V
DD
= 40 V, I
D
= 50 A
t
f
Fall Time
90
nS
R
G
= 50 , V
GS
= 10 V
t
cross
Cross-Over Time
250
nS
Electrical Characteristics - Source Drain Diode
I
SD
Source Drain Current
50
A
I
SDM
*
Source Drain Current (pulsed)
200
A
V
SD
Forward On Voltage
2
V
I
SD
= 50 A, V
GS
= 0
t
rr
Reverse Recovery Time
150
nS
I
SD
= 50 A, di/dt = 100 A/µs
V
R
= 30 V, T
j
= 150°C
Q
rr
Reverse Recovery Charge
0.2
µC
I
RRM
Reverse Recovery Current
4
A
*Pulsed: Pulse Duration 300µS, Duty Cycle 1.5%.
OM60N05SA
(T
C
= 25°C unless otherwise specified)
Avalanche Characteristics
Min.
Typ. Max. Units Test Conditions
I
AR
Avalanche Current
55
A
(repetitive or
non-repetitive,T
J
= 25°C)
E
AS
Single Pulse Avalanche Energy
520
mJ
(starting T
J
= 25°C,
I
D
= I
AR
, V
DD
= 25 V)
E
AR
Repetitive Avalanche Energy
130
mJ
(pulse width limited
by T
j max
,
d
< 1%)
I
AR
Avalanche Current
34
A
(repetitive or
non-repetitive, T
J
= 100°C)
Electrical Characteristics - OFF
V
(BR)DSS
Drain-Source
50
V
I
D
= 250 µA, V
GS
= 0
Breakdown Voltage
I
DSS
Zero Gate Voltage
250
µA
V
DS
= Max. Rat.